{"id":7804,"date":"2026-06-27T03:35:06","date_gmt":"2026-06-27T03:35:06","guid":{"rendered":"https:\/\/materialparts.com\/irf3415strlpbf-2\/"},"modified":"2026-06-28T10:20:55","modified_gmt":"2026-06-28T10:20:55","slug":"irf3415strlpbf-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf3415strlpbf-2\/","title":{"rendered":"IRF3415STRLPBF"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The IRF3415STRLPBF is an N-channel HEXFET power MOSFET from Infineon Technologies featuring 150V VDSS, 43A ID, and 42 mOhm RDS(ON) max in a D2PAK (TO-263AB) surface-mount package. Fifth-generation HEXFET technology achieves extremely low on-resistance per silicon area.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0646\u0648\u0639 \u0627\u0644\u0642\u0646\u0627\u0629<\/td>\n<td>N-Channel Enhancement<\/td>\n<\/tr>\n<tr>\n<td>Drain-Source Voltage (VDSS)<\/td>\n<td>150 V<\/td>\n<\/tr>\n<tr>\n<td>Continuous Drain Current (ID)<\/td>\n<td>43 A (at TC=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>RDS(ON) max<\/td>\n<td>42 mOhm @ VGS=10V<\/td>\n<\/tr>\n<tr>\n<td>Gate Threshold Voltage<\/td>\n<td>2.0 V to 4.0 V<\/td>\n<\/tr>\n<tr>\n<td>Total Gate Charge (Qg)<\/td>\n<td>78 nC typical<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>200 W (at TC=25\u00b0C)<\/td>\n<\/tr>\n<tr>\n<td>Input Capacitance (Ciss)<\/td>\n<td>2400 pF typical<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55\u00b0C to +175\u00b0C (Tj)<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>D2PAK \/ TO-263AB<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Fifth-generation HEXFET with advanced process technology<\/li>\n<li>Extremely low RDS(ON): 42 mOhm max at VGS=10V<\/li>\n<li>Avalanche rated for rugged applications<\/li>\n<li>Improved dv\/dt capability for noise immunity<\/li>\n<li>175\u00b0C operating junction temperature<\/li>\n<li>Surface-mount D2PAK package for high-power applications<\/li>\n<li>Lead-free (Pb-free) construction<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Switch-mode power supplies (SMPS)<\/li>\n<li>Motor drives and inverters<\/li>\n<li>\u0645\u062d\u0648\u0644\u0627\u062a DC-DC<\/li>\n<li>Uninterruptible power supplies<\/li>\n<li>Active rectification<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IRF3415STRLPBF is an N-channel HEXFET power MOSFET from Infineon Technologies featuring 150V VDSS, 43A ID, and 42 mOhm RDS(ON) max in a D2PAK (TO-263AB) surface-mount package. Fifth-generation HEXFET technology achieves extremely low on-resistance per silicon area. Key Specifications Channel Type N-Channel Enhancement Drain-Source Voltage (VDSS) 150 V Continuous Drain Current (ID) 43 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7804","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch HEXFET MOSFET, 150V, 43A, 42mOhm, D2PAK\/TO-263AB","date_code":"","package_case":"D2PAK \/ TO-263AB (Surface Mount)","in_stock":8742,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf3415spbf.pdf","price":"$1.44 @ 800pcs","product_introduction":"The IRF3415STRLPBF is a fifth-generation N-channel HEXFET power MOSFET from Infineon Technologies utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. Rated at 150V VDSS and 43A continuous drain current, it delivers 42 mOhm maximum RDS(ON) at VGS=10V. The device is avalanche rated for rugged applications and features improved dv\/dt capability for enhanced noise immunity. The D2PAK (TO-263AB) surface-mount package provides the highest power capability in a surface-mount footprint, suitable for high-current applications with low internal connection resistance and up to 200W power dissipation at case temperatures of 25\u00b0C.","working_principle":"The IRF3415STRLPBF uses a vertical DMOS structure where current flows vertically from the drain (mounted on the package tab) through the epitaxial layer to the source. The HEXFET cell geometry uses a hexagonal layout of MOSFET cells that maximizes channel width per unit area, achieving very low specific on-resistance. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms beneath the gate oxide connecting the N+ source to the N-epitaxial drain region. The fifth-generation process shrinks cell pitch and optimizes the P-body and N+ source profiles for the best RDS(ON) times Area product. The integral body diode provides reverse current conduction during switching transients, with a typical forward voltage of 1.3V. The avalanche rating ensures the device can absorb energy from unclamped inductive switching without failure.","pin_description":"<table border=\"1\" cellpadding=\"4\">\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Description<\/th><\/tr>\n<tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>Gate control terminal<\/td><\/tr>\n<tr><td>2<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to tab)<\/td><\/tr>\n<tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal<\/td><\/tr>\n<tr><td>Tab<\/td><td>Drain<\/td><td>Power<\/td><td>Thermal pad, electrically connected to drain<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li><strong>SMPS Primary Switch:<\/strong> 150V rating and 42 mOhm RDS(ON) for efficient off-line and 48V DC-DC converter primary-side switching<\/li>\n<li><strong>Motor Drives:<\/strong> 43A continuous current and 150A pulsed current capability for brushless DC and AC induction motor inverter stages<\/li>\n<li><strong>DC-DC Converters:<\/strong> Low gate charge (78 nC) and fast switching reduce losses in high-frequency buck\/boost topologies<\/li>\n<li><strong>UPS Systems:<\/strong> Avalanche rating provides robustness against voltage spikes from inductive loads during power transfer<\/li>\n<li><strong>Active Rectification:<\/strong> Low RDS(ON) reduces conduction losses compared to diode rectification in synchronous rectifier circuits<\/li>\n<\/ul>","alternative_models":"<table border=\"1\" cellpadding=\"4\">\n<tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><th>Package<\/th><th>Specs<\/th><\/tr>\n<tr><td>IRF3415LPBF<\/td><td>Infineon<\/td><td>TO-262 (I2PAK) through-hole version<\/td><td>-<\/td><td>-<\/td><\/tr>\n<tr><td>IRFZ44NPBF<\/td><td>Infineon<\/td><td>55V, 49A, TO-220, lower voltage<\/td><td>-<\/td><td>-<\/td><\/tr>\n<tr><td>IPD034N15N3<\/td><td>Infineon<\/td><td>150V, 60A, 3.4 mOhm, SuperJunction<\/td><td>-<\/td><td>-<\/td><\/tr>\n<tr><td>FDB86102<\/td><td>onsemi<\/td><td>100V, 56A, D2PAK, lower voltage<\/td><td>-<\/td><td>-<\/td><\/tr>\n<tr><td>STW88N150<\/td><td>ST<\/td><td>150V, 88A, TO-247, higher current<\/td><td>-<\/td><td>-<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7804","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7804"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7804\/revisions"}],"predecessor-version":[{"id":8323,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7804\/revisions\/8323"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7804"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7804"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7804"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7804"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}