{"id":7609,"date":"2026-06-26T06:52:32","date_gmt":"2026-06-26T06:52:32","guid":{"rendered":"https:\/\/materialparts.com\/us3m-13\/"},"modified":"2026-06-26T14:53:09","modified_gmt":"2026-06-26T14:53:09","slug":"us3m-13","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/us3m-13\/","title":{"rendered":"US3M-13"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The US3M-13 from Diodes Incorporated is a 3A, 1000V ultra-fast recovery rectifier in SMC (DO-214AB) surface-mount package with 85ns reverse recovery time for high-efficiency power conversion.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nUltra-Fast Recovery Rectifier<\/td>\n<\/tr>\n
Reverse Voltage (VRRM)<\/td>\n1000V<\/td>\n<\/tr>\n
Forward Current (IF)<\/td>\n3A<\/td>\n<\/tr>\n
Forward Voltage (VF)<\/td>\n1.5V typical \/ 1.8V max @ 3A<\/td>\n<\/tr>\n
Reverse Recovery Time (trr)<\/td>\n70ns typical \/ 85ns max<\/td>\n<\/tr>\n
Reverse Leakage (IR)<\/td>\n10uA @ 1000V<\/td>\n<\/tr>\n
Surge Current (IFSM)<\/td>\n120A<\/td>\n<\/tr>\n
Junction Capacitance<\/td>\n25pF @ 4V, 1MHz<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSMC (DO-214AB)<\/td>\n<\/tr>\n
Junction Temperature<\/td>\n-65 to +175 C<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • Ultra-fast recovery: 70ns typical<\/li>\n
  • High reverse voltage: 1000V<\/li>\n
  • High surge current: 120A<\/li>\n
  • Glass passivated die for reliability<\/li>\n
  • Low leakage current: 10uA @ 1000V<\/li>\n
  • SMC surface-mount package<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Switching power supply rectification<\/li>\n
    • Freewheeling diode in inverters<\/li>\n
    • Snubber and clamp circuits<\/li>\n
    • PFC boost diode<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The US3M-13 from Diodes Incorporated is a 3A, 1000V ultra-fast recovery rectifier in SMC (DO-214AB) surface-mount package with 85ns reverse recovery time for high-efficiency power conversion. Key Specifications Type Ultra-Fast Recovery Rectifier Reverse Voltage (VRRM) 1000V Forward Current (IF) 3A Forward Voltage (VF) 1.5V typical \/ 1.8V max @ 3A Reverse Recovery Time […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[193],"class_list":["post-7609","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-diodes-inc"],"acf":{"brief_explanation":"3A 1000V ultra-fast rectifier, 85ns trr, SMC (DO-214AB), 120A surge","date_code":"","package_case":"SMC (DO-214AB, 7.11 x 6.22 x 2.42 mm)","in_stock":3424,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/US3M.pdf","price":"$0.24 @ 1ku","product_introduction":"

      The US3M-13 from Diodes Incorporated is a 3A, 1000V ultra-fast recovery rectifier designed for high-efficiency power conversion applications. The device features a reverse recovery time of only 70ns typical (85ns max), which significantly reduces switching losses in high-frequency circuits compared to standard recovery rectifiers. The glass-passivated die construction ensures high reliability and reverse breakdown voltage stability. With a forward voltage drop of 1.5V typical at 3A and a low reverse leakage current of 10uA at 1000V, the US3M-13 offers a good balance between conduction and blocking losses. The high non-repetitive surge current rating of 120A provides robust protection against inrush currents and transient events. The SMC (DO-214AB) surface-mount package offers a compact footprint with efficient thermal dissipation, suitable for automated PCB assembly.<\/p>","working_principle":"

      The US3M-13 operates as a PN junction rectifier with optimized carrier lifetime control: (1) Forward conduction - When the anode voltage exceeds the cathode by more than the forward voltage (approximately 1.5V at 3A), the PN junction becomes forward biased and conducts current. Majority carriers (holes from P-region and electrons from N-region) flow across the junction, and minority carriers are injected into both regions, establishing a stored charge. (2) Reverse recovery - When the applied voltage reverses, the stored minority carriers must be removed before the junction can block current. In ultra-fast rectifiers like the US3M-13, the carrier lifetime is reduced through controlled platinum diffusion or similar lifetime killing techniques. This dramatically shortens the reverse recovery time to 70ns typical, compared to microseconds for standard recovery diodes. The shorter recovery time means less energy is dissipated during each switching transition, improving efficiency at high switching frequencies. (3) Reverse blocking - After the stored charge is cleared, the PN junction blocks reverse voltage up to 1000V. The glass passivation layer protects the junction edges from contamination and ensures stable breakdown characteristics over time and temperature.<\/p>","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Cathode<\/td>Cathode terminal (marked with band)<\/td><\/tr>
      2<\/td>Anode<\/td>Anode terminal<\/td><\/tr><\/table>","application_scenarios":"
      • Switching power supply output rectification at high frequencies where 70ns reverse recovery minimizes switching losses<\/li>
      • Freewheeling diode in inverter circuits requiring 1000V blocking and fast recovery for motor drive applications<\/li>
      • Snubber and clamp circuits in flyback converters using ultra-fast recovery to protect switching transistors<\/li>
      • PFC boost diode in power factor correction circuits demanding low recovery loss at 1000V<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        US3M-13-F<\/td>Diodes Inc<\/td>Lead-free version, same specs<\/td><\/tr>
        MUR320E3\/51T<\/td>onsemi<\/td>3A\/200V, faster trr=35ns<\/td><\/tr>
        US2M-13<\/td>Diodes Inc<\/td>2A version, SMA package<\/td><\/tr>
        ES3J-13-F<\/td>Diodes Inc<\/td>3A\/600V, super-fast trr=35ns<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7609","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7609"}],"version-history":[{"count":2,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7609\/revisions"}],"predecessor-version":[{"id":7772,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7609\/revisions\/7772"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7609"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7609"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7609"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7609"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}