{"id":7507,"date":"2026-06-25T07:45:03","date_gmt":"2026-06-25T07:45:03","guid":{"rendered":"https:\/\/materialparts.com\/irf530npbf\/"},"modified":"2026-06-25T07:45:03","modified_gmt":"2026-06-25T07:45:03","slug":"irf530npbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf530npbf\/","title":{"rendered":"IRF530NPBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF530NPBF from Infineon Technologies is an N-channel HEXFET power MOSFET rated at 100V VDS, 17A ID, with 90mohm RDS(on) in a TO-220AB through-hole package. Designed for switching applications requiring high voltage and moderate current.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0646\u0648\u0639 \u0627\u0644\u0642\u0646\u0627\u0629<\/td>\nN-Channel<\/td>\n<\/tr>\n
VDS (Drain-Source)<\/td>\n100 V<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n17 A<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n90 mohm @ VGS=10V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n70 W<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n37 nC typical<\/td>\n<\/tr>\n
Turn-On Delay<\/td>\n9.2 ns typical<\/td>\n<\/tr>\n
Turn-Off Delay<\/td>\n35 ns typical<\/td>\n<\/tr>\n
Transconductance (gFS)<\/td>\n12 S typical<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2-4 V<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-220AB<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to +175 C (TJ)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 100V rating suitable for 48V automotive and industrial systems<\/li>\n
  • 90mohm RDS(on) for low conduction losses<\/li>\n
  • Dynamic dv\/dt rated for rugged switching<\/li>\n
  • Fast switching with 9.2ns turn-on delay<\/li>\n
  • TO-220AB through-hole package for easy prototyping and heat sinking<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • DC-DC converter power stage<\/li>\n
    • Motor drive and inverter switching element<\/li>\n
    • Solenoid and relay driver<\/li>\n
    • Battery charger switching transistor<\/li>\n
    • Load switch for industrial power distribution<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF530NPBF from Infineon Technologies is an N-channel HEXFET power MOSFET rated at 100V VDS, 17A ID, with 90mohm RDS(on) in a TO-220AB through-hole package. Designed for switching applications requiring high voltage and moderate current. Key Specifications Channel Type N-Channel VDS (Drain-Source) 100 V ID (Continuous Drain Current) 17 A RDS(on) Max 90 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7507","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch MOSFET, 100V, 17A, 90mohm, TO-220AB","date_code":"","package_case":"TO-220AB (10.4 x 4.6 x 15.8 mm)","in_stock":8901,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IRF530N-DataSheet-v01_01-EN.pdf?fileId=5546d462533600a4015355e386b1199a","price":"$0.80 @ 1ku","product_introduction":"The IRF530NPBF from Infineon Technologies is a 100V N-channel HEXFET power MOSFET in a TO-220AB through-hole package. The device features 90mohm maximum on-resistance at 10V gate drive, 17A continuous drain current rating, and 70W power dissipation capability. With 37nC typical gate charge and 9.2ns turn-on delay time, the IRF530NPBF is well-suited for medium-frequency switching applications. The dynamic dv\/dt rating ensures rugged performance in inductive switching environments. The PBF suffix indicates lead-free (Pb-free) plating.","working_principle":"The IRF530NPBF operates as a voltage-controlled N-channel enhancement-mode power MOSFET. (1) When VGS exceeds the threshold voltage (2-4V), an inversion layer forms in the P-body region beneath the gate oxide, creating an N-type channel connecting source to drain. Current flows from drain to source, with the on-resistance determined by the channel resistance plus the drift region resistance. At VGS=10V, RDS(on) is typically 70mohm. (2) During switching, the gate charge must be supplied or removed through the gate driver. The 37nC total gate charge determines the switching speed: lower gate resistance in the driver circuit produces faster switching but higher dv\/dt stress. (3) The HEXFET cell geometry uses a hexagonal layout of millions of parallel MOSFET cells on a single die, minimizing on-resistance per unit area. The epitaxial drift layer is optimized for 100V breakdown, providing the voltage blocking capability when the MOSFET is off.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Gate input (voltage controlled)<\/td><\/tr>
      2<\/td>Drain<\/td>Drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Source and substrate<\/td><\/tr>
      Tab<\/td>Drain<\/td>Drain tab for heat sinking<\/td><\/tr><\/table>","application_scenarios":"
      • DC-DC converter power stage: half-bridge or synchronous buck converter switching element<\/li>
      • Motor drive and inverter switching element for 48V and 80V motor systems<\/li>
      • Solenoid and relay driver with free-wheeling diode for inductive loads<\/li>
      • Battery charger switching transistor in offline and DC-DC topologies<\/li>
      • Load switch for industrial power distribution and hot-swap applications<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        IRF540NPBF<\/td>Infineon<\/td>100V, 28A, 44mohm, higher current<\/td><\/tr>
        IRFZ44NPBF<\/td>Infineon<\/td>55V, 47A, lower voltage<\/td><\/tr>
        FDP8441<\/td>onsemi<\/td>40V, 80A, much lower RDS(on)<\/td><\/tr>
        IRFB4110PBF<\/td>Infineon<\/td>100V, 180A, 3.7mohm, high performance<\/td><\/tr>
        STP75NF75<\/td>ST<\/td>75V, 75A, 13mohm<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7507","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7507"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7507\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7507"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7507"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7507"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7507"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}