{"id":7420,"date":"2026-06-24T05:07:45","date_gmt":"2026-06-24T05:07:45","guid":{"rendered":"https:\/\/materialparts.com\/irf640n-2\/"},"modified":"2026-06-24T05:07:45","modified_gmt":"2026-06-24T05:07:45","slug":"irf640n-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf640n-2\/","title":{"rendered":"IRF640N"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF640N from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with 0.15 Ohm RDS(on) at 10V gate drive and 18A continuous drain current in a TO-220 through-hole package.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nN-Channel Enhancement MOSFET<\/td>\n<\/tr>\n
VDSS<\/td>\n200 V<\/td>\n<\/tr>\n
\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n18 A (continuous @ TC=25\u00b0C)<\/td>\n<\/tr>\n
RDS(\u062a\u0634\u063a\u064a\u0644)<\/td>\n0.15 Ohm max @ VGS=10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n2.0 to 4.0 V<\/td>\n<\/tr>\n
Total Gate Charge<\/td>\n47 nC typical<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n140 W @ TC=25\u00b0C<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nTO-220AB (3-pin)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 200V N-ch power MOSFET with 150mOhm RDS(on) and 18A in TO-220<\/li>\n
  • Industry-standard device for medium-voltage switching and motor drive<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Motor drive and H-bridge inverters at 24-48V bus voltage<\/li>\n
    • Switching power supply and DC-DC converter at 200V<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF640N from Infineon (formerly International Rectifier) is a 200V N-channel power MOSFET with 0.15 Ohm RDS(on) at 10V gate drive and 18A continuous drain current in a TO-220 through-hole package. Key Specifications Type N-Channel Enhancement MOSFET VDSS 200 V ID 18 A (continuous @ TC=25\u00b0C) RDS(on) 0.15 Ohm max @ VGS=10V VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7420","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"200V N-ch MOSFET, 150mR RDS(on), 18A, TO-220","date_code":"","package_case":"TO-220AB (15.60 x 10.40 x 4.60 mm)","in_stock":10200,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf640npbf.pdf","price":"$1.10 @ 1ku","product_introduction":"The IRF640N from Infineon is an industry-standard 200V N-channel enhancement-mode power MOSFET in a TO-220 through-hole package. The device features 0.15 Ohm maximum on-resistance at VGS=10V with 18A continuous drain current, making it one of the most widely used medium-voltage MOSFETs for motor drive, switching power supply, and general-purpose power switching applications. The 200V breakdown voltage provides adequate margin for 48V and 80V bus systems including automotive 12V\/24V applications with inductive spike margin. The N suffix denotes the improved version with lower RDS(on) than the original IRF640. The TO-220 package provides 140W power dissipation at TC=25\u00b0C with easy heatsink mounting. The 47nC gate charge is moderate for this voltage\/current class, allowing efficient switching at frequencies up to approximately 200kHz with appropriate gate drive.","working_principle":"The IRF640N is a planar N-channel enhancement-mode vertical DMOS power MOSFET. (1) N-Channel Enhancement: The device is normally off. When VGS exceeds the threshold (2.0-4.0V), an inversion layer forms under the gate oxide, creating a conduction channel. Current flows from drain to source through the channel and the drift region. The body diode (anode at source, cathode at drain) provides a freewheeling path for inductive loads. (2) Planar DMOS Structure: The planar cell geometry uses a double-diffused channel to achieve a short channel length with precise control. The vertical current flow from drain (bottom of die) to source (top) maximizes the current handling per unit die area. (3) 200V Rating: The lightly-doped epitaxial drift region supports 200V breakdown. This region contributes to the RDS(on), which at 150mOhm is a good balance for the 200V\/18A rating. (4) Ruggedness: The device is rated for single-pulse avalanche energy and has a safe operating area (SOA) suitable for linear and switching applications.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      1<\/td>G<\/td>Gate<\/td><\/tr>
      2<\/td>D<\/td>Drain<\/td><\/tr>
      3<\/td>S<\/td>Source<\/td><\/tr>
      Tab<\/td>D<\/td>Drain (connected to case)<\/td><\/tr><\/table>","application_scenarios":"
      • Motor drive and H-bridge inverters at 24-48V bus with 18A rating<\/li>
      • 200V switching power supply and DC-DC converter primary switch<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRF640<\/td>TO-220<\/td>Original version, higher Ron<\/td><\/tr>
        onsemi<\/td>FQA19N20<\/td>TO-220<\/td>200V, 19A, similar<\/td><\/tr>
        ST<\/td>STW20NM50<\/td>TO-247<\/td>500V, 20A, higher voltage<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7420","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7420"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7420\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7420"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7420"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7420"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7420"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}