The FQD8N80TM from onsemi is an 800V, 3.5A N-channel QFET power MOSFET in a DPAK (TO-252) package. Using planar stripe DMOS technology, it provides low on-resistance and superior switching performance for SMPS, PFC, and motor drive applications.<\/p>\n
| VDS<\/td>\n | 800 V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| \u0627\u0644\u0647\u0648\u064a\u0629 (\u0645\u0633\u062a\u0645\u0631)<\/td>\n | 3.5 A at Tc=25C<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| RDS(on) Max<\/td>\n | 3.6 Ohm at VGS=10V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Gate Charge<\/td>\n | 19 nC typical at 10V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Input Capacitance<\/td>\n | 680 pF typical<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| Avalanche Energy<\/td>\n | 460 mJ single pulse<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| \u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n | 3.13W (Ta), 100W (Tc)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||
| \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n | -55C to +150C<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The FQD8N80TM from onsemi is an 800V, 3.5A N-channel QFET power MOSFET in a DPAK (TO-252) package. Using planar stripe DMOS technology, it provides low on-resistance and superior switching performance for SMPS, PFC, and motor drive applications. Key Specifications VDS 800 V ID (continuous) 3.5 A at Tc=25C RDS(on) Max 3.6 Ohm at […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[144],"class_list":["post-7269","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"800V 3.5A N-ch MOSFET, 3.6Ohm, DPAK, QFET planar DMOS, 19nC Qg, 100% avalanche","date_code":"","package_case":"DPAK \/ TO-252-3 (6.60 x 6.10 x 2.30 mm)","in_stock":11648,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fqd8n80tm-d.pdf","price":"$0.55 @ 1ku","product_introduction":"The FQD8N80TM from onsemi is an 800V, 3.5A N-channel enhancement mode power MOSFET in a DPAK (TO-252) surface-mount package. The device is produced using onsemi proprietary planar stripe and DMOS technology, which has been especially tailored to reduce on-state resistance and provide superior switching performance with high avalanche energy strength. The 3.6 Ohm maximum RDS(on) at VGS=10V and 19nC typical total gate charge provide an excellent balance between conduction loss and switching loss for moderate-frequency power conversion applications. The low Crss of 8.6pF typical minimizes the Miller effect, reducing the risk of parasitic turn-on during high dV\/dt switching transitions. The device is 100% avalanche tested, ensuring reliable operation under inductive load conditions where voltage spikes may exceed the rated VDS. The DPAK package provides surface-mount convenience with adequate thermal performance through the exposed drain tab, supporting up to 100W power dissipation when properly heatsinked. The FQD8N80TM is well-suited for off-line switch-mode power supplies, active PFC boost converters, and other high-voltage switching applications.","working_principle":"The FQD8N80TM is a vertical DMOS N-channel enhancement mode power MOSFET. (1) DMOS Structure: The planar stripe DMOS technology uses vertical current flow from source to drain through thousands of parallel MOSFET cells. Each cell has a gate oxide over the P-body region. When VGS exceeds the threshold (3.0-5.0V), an N-type inversion layer forms at the oxide-semiconductor interface, creating a conductive channel from source to drain. (2) Voltage Blocking: When VGS=0V, the P-body\/N-drift junction blocks current flow. The 800V rating is achieved through a lightly-doped N-drift region that supports the high electric field during the off-state. (3) On-State Conduction: When the channel is formed, current flows from source through the channel, across the JFET region between adjacent P-bodies, through the N-drift region, and out the drain. The RDS(on) of 3.6 Ohm max includes the channel resistance, JFET resistance, drift region resistance, and substrate resistance. (4) Avalanche: When the drain voltage exceeds the breakdown voltage, the device enters avalanche mode. The current flows through the P-body\/N-drift junction in breakdown. The 460mJ single-pulse avalanche energy rating indicates the device can absorb significant energy during inductive turn-off transients.","pin_description":"
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