{"id":7231,"date":"2026-06-23T07:43:36","date_gmt":"2026-06-23T07:43:36","guid":{"rendered":"https:\/\/materialparts.com\/irfl9110trpbf\/"},"modified":"2026-06-23T07:43:36","modified_gmt":"2026-06-23T07:43:36","slug":"irfl9110trpbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irfl9110trpbf\/","title":{"rendered":"IRFL9110TRPBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRFL9110TRPBF from Infineon (formerly IR) is a -100V, -1.7A P-channel power MOSFET in a SOT-223 package. With 0.6 Ohm RDS(on), it provides efficient high-side switching for load control and power management applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n
VDSS<\/td>\n-100 V<\/td>\n<\/tr>\n
\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n-1.7 A (at TC=25C)<\/td>\n<\/tr>\n
RDS(\u062a\u0634\u063a\u064a\u0644)<\/td>\n0.6 Ohm (max, VGS=-10V)<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n14 nC (typical)<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n2.5 W (at TA=25C)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55C to +175C<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • -100V P-channel for high-side switching without charge pump<\/li>\n
  • 0.6 Ohm RDS(on) for efficient load switching at 1.7A<\/li>\n
  • SOT-223 compact surface-mount package for space-constrained designs<\/li>\n
  • 14nC low gate charge simplifies gate drive requirements<\/li>\n
  • 175C maximum junction temperature for rugged operation<\/li>\n
  • Simple high-side drive: pull gate to ground for turn-on<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side load switching in battery-powered systems<\/li>\n
    • Power routing and battery disconnect circuits<\/li>\n
    • Reverse polarity protection using P-channel configuration<\/li>\n
    • Motor and solenoid driver with simplified gate drive<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRFL9110TRPBF from Infineon (formerly IR) is a -100V, -1.7A P-channel power MOSFET in a SOT-223 package. With 0.6 Ohm RDS(on), it provides efficient high-side switching for load control and power management applications. Key Specifications VDSS -100 V ID -1.7 A (at TC=25C) RDS(on) 0.6 Ohm (max, VGS=-10V) Gate Charge (Qg) 14 nC […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-7231","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"-100V -1.7A P-ch MOSFET, 0.6Ohm, SOT-223, 14nC Qg, high-side switch, no charge pump","date_code":"","package_case":"SOT-223 (6.50 x 3.50 x 1.60 mm, surface mount)","in_stock":8493,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfl9110.pdf?fileId=5546d462533600a40153561593aa5d95","price":"$0.50 @ 1ku","product_introduction":"The IRFL9110TRPBF from Infineon (formerly International Rectifier) is a -100V, -1.7A P-channel power MOSFET in a SOT-223 surface-mount package. The P-channel architecture enables simple high-side switching without the charge pump circuitry required by N-channel MOSFETs, significantly simplifying the gate drive design. To turn on the MOSFET, the gate is pulled to ground (relative to the source connected to the supply), and to turn off, the gate is pulled up to the source voltage. The -100V rating supports direct connection to 48V and lower supply rails with margin for transients. The 0.6 Ohm maximum RDS(on) at VGS=-10V provides efficient conduction at the 1.7A current rating, with power dissipation manageable with standard PCB copper area in the SOT-223 package. The 14nC typical gate charge requires minimal drive current, enabling direct MCU GPIO drive for slow-switching applications. The 175C maximum junction temperature and 2.5W power dissipation rating support operation in demanding environments.","working_principle":"The IRFL9110TRPBF is a P-channel vertical power MOSFET. (1) P-Channel Operation: In a P-channel MOSFET, current flows from source (connected to the positive supply) through the channel to drain (connected to the load) when the gate voltage is negative relative to the source. When VGS is below the threshold (typically -2 to -4V), holes form an inversion layer (channel) connecting the source P+ region to the drain P+ region through the N-type body. (2) High-Side Switch: The source is connected to the positive supply rail. When the gate is pulled to ground (VGS = -Vsupply), the MOSFET turns on, connecting the supply to the load. When the gate is pulled to the supply (VGS = 0V), the MOSFET turns off. This eliminates the need for a bootstrap or charge pump circuit that N-channel high-side switches require. (3) RDS(on): The 0.6 Ohm on-resistance is higher than equivalent N-channel devices (due to the lower hole mobility compared to electrons), but the simplified drive circuitry often justifies the trade-off for moderate current applications.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>Drain (tab, connected to heatsink area)<\/td><\/tr>
      3<\/td>Source<\/td>Output<\/td>Source (connects to supply)<\/td><\/tr>
      4<\/td>Drain<\/td>Output<\/td>Drain (same as pin 2, tab)<\/td><\/tr><\/table>","application_scenarios":"
      • High-side load switching in battery-powered systems without charge pump<\/li>
      • Power routing and battery disconnect circuits at -100V rating<\/li>
      • Reverse polarity protection using P-channel configuration in SOT-223<\/li>
      • Motor and solenoid driver with simplified gate drive from MCU GPIO<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Infineon<\/td>IRF9Z34NPBF<\/td>TO-220<\/td>-60V, -12A, higher current<\/td><\/tr>
        Vishay<\/td>IRF9Z24NPBF<\/td>TO-220AB<\/td>-60V, -12A, through-hole<\/td><\/tr>
        onsemi<\/td>FQP3P06<\/td>TO-220<\/td>-60V, -3.4A, popular<\/td><\/tr>
        Infineon<\/td>BSD235P6327HTSA1<\/td>SOT-223<\/td>-60V, -1.5A, SMD<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7231","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7231"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7231\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7231"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7231"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7231"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7231"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}