The KS24C04 from Samsung is a 4Kbit (512×8) I2C serial EEPROM in a SOIC-8 package. With 1 million erase\/write cycles and 100-year data retention, it provides reliable non-volatile storage for configuration data, calibration, and user settings.<\/p>\n
| Memory Size<\/td>\n | 4 Kbit (512 x 8 bit)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| \u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\n | I2C (2-wire serial)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Clock Frequency<\/td>\n | 400 kHz (max)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Write Cycle Time<\/td>\n | 5 ms (max, byte\/page)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Endurance<\/td>\n | 1,000,000 cycles<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| \u0627\u0644\u0627\u062d\u062a\u0641\u0627\u0638 \u0628\u0627\u0644\u0628\u064a\u0627\u0646\u0627\u062a<\/td>\n | 100 years<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n | -40C to +85C<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The KS24C04 from Samsung is a 4Kbit (512×8) I2C serial EEPROM in a SOIC-8 package. With 1 million erase\/write cycles and 100-year data retention, it provides reliable non-volatile storage for configuration data, calibration, and user settings. Key Specifications Memory Size 4 Kbit (512 x 8 bit) Interface I2C (2-wire serial) Clock Frequency 400 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[26,13],"tags":[],"chip_brand":[162],"class_list":["post-7188","post","type-post","status-publish","format-standard","hentry","category-digital-signal-processors-dsp","category-integrated-circuits-ics","chip_brand-samsung"],"acf":{"brief_explanation":"4Kbit I2C EEPROM, 512x8, 400kHz, 1M cycles, SOIC-8, write protect, non-volatile","date_code":"","package_case":"SOIC-8 (4.90 x 3.90 x 1.37 mm)","in_stock":6271,"datasheet":"https:\/\/www.samsung.com\/semiconductor\/datasheet\/KS24C04","price":"$0.35 @ 1ku","product_introduction":"The KS24C04 from Samsung is a 4Kbit (512 x 8 bit) electrically erasable programmable read-only memory (EEPROM) with I2C serial interface in a SOIC-8 package. The device uses a standard 2-wire I2C bus for communication, supporting clock frequencies up to 400kHz (fast mode). The memory is organized as 512 bytes of 8 bits each, with a 16-byte page write capability that allows up to 16 bytes to be written in a single write cycle. The write cycle time is 5ms maximum for both byte and page writes. The device supports 1 million erase\/write cycles with 100-year data retention, providing long-term reliability for configuration and calibration data. A hardware write protect (WP) pin prevents accidental write operations when tied to VCC. The I2C device address is partially configurable through the A0-A2 address pins, allowing up to 8 devices on the same I2C bus. The device operates from 1.8V to 5.5V supply and is rated for -40C to +85C.","working_principle":"The KS24C04 uses floating-gate NMOS memory cells for non-volatile storage. (1) Memory Cell: Each bit is stored as charge on a floating gate electrode isolated by oxide layers. A charged floating gate shifts the transistor threshold voltage high (logic 0), while an uncharged gate leaves the transistor in the low-threshold state (logic 1). (2) Read: During a read operation, the memory cell transistor is biased at a voltage between the two threshold levels. If the cell is programmed (charged gate), the transistor does not conduct. If the cell is erased (uncharged gate), the transistor conducts. A sense amplifier detects the current difference and outputs the corresponding logic level. (3) Write: Programming uses Fowler-Nordheim tunneling - a high voltage (approximately 15V) applied across the thin oxide causes electrons to tunnel onto the floating gate. Erasing reverses the voltage to remove electrons. (4) I2C Protocol: The host initiates communication with a start condition, followed by the 7-bit device address and R\/W bit. The addressed KS24C04 acknowledges and then receives or transmits data according to the R\/W bit. (5) Page Write: Up to 16 bytes can be written sequentially. The lower 4 address bits auto-increment, while the upper bits remain constant. The write operation begins after the stop condition.","pin_description":"
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