{"id":7058,"date":"2026-06-23T02:56:15","date_gmt":"2026-06-23T02:56:15","guid":{"rendered":"https:\/\/materialparts.com\/fqd17p06tm\/"},"modified":"2026-06-23T02:56:15","modified_gmt":"2026-06-23T02:56:15","slug":"fqd17p06tm","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/fqd17p06tm\/","title":{"rendered":"FQD17P06TM"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The FQD17P06TM from onsemi (formerly Fairchild) is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and -12 A ID in a DPAK (TO-252) surface-mount package. Using proprietary planar stripe DMOS technology, it achieves RDS(on) of 135 m\u03a9 max at VGS = -10 V with low gate charge of 21 nC, making it suitable for switched-mode power supplies, audio amplifiers, DC motor control, and load switching in consumer and industrial applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641-\u0627\u0644\u0645\u0635\u0631\u0641)<\/td>\n-60 V<\/td>\n<\/tr>\n
ID (Continuous, TC=25\u00b0C)<\/td>\n-12 A<\/td>\n<\/tr>\n
RDS(on) @ VGS=-10V, ID=-6A<\/td>\n110 m\u03a9 (typ), 135 m\u03a9 (max)<\/td>\n<\/tr>\n
VGS(th) Range<\/td>\n-2.0 \u0641\u0648\u0644\u062a \u0625\u0644\u0649 -4.0 \u0641\u0648\u0644\u062a<\/td>\n<\/tr>\n
Qg (Total Gate Charge, typ)<\/td>\n21 nC<\/td>\n<\/tr>\n
\u0637\u0627\u0642\u0629 \u0627\u0644\u0627\u0646\u0647\u064a\u0627\u0631 \u0627\u0644\u062c\u0644\u064a\u062f\u064a (EAS)<\/td>\n300 mJ (single pulse)<\/td>\n<\/tr>\n
Crss (typ)<\/td>\n80 pF<\/td>\n<\/tr>\n
Power Dissipation (TC=25\u00b0C)<\/td>\n44 W<\/td>\n<\/tr>\n
Operating Junction Temp<\/td>\n-55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • P-channel QFET with low RDS(on) of 135 m\u03a9 max for efficient high-side switching<\/li>\n
  • Low gate charge (21 nC typical) and low Crss (80 pF) for fast switching<\/li>\n
  • 100% avalanche tested for rugged reliability in unclamped inductive applications<\/li>\n
  • Planar stripe DMOS technology for low on-resistance and superior switching performance<\/li>\n
  • DPAK surface-mount package for compact PCB design<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Switched-mode power supplies (SMPS) as high-side switch<\/li>\n
    • Audio amplifier output stages<\/li>\n
    • DC motor control and bridge circuits<\/li>\n
    • LCD\/LED TV power management<\/li>\n
    • Load switching and battery protection circuits<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FQD17P06TM from onsemi (formerly Fairchild) is a P-channel enhancement-mode power MOSFET rated at -60 V VDS and -12 A ID in a DPAK (TO-252) surface-mount package. Using proprietary planar stripe DMOS technology, it achieves RDS(on) of 135 m\u03a9 max at VGS = -10 V with low gate charge of 21 nC, making […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-7058","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"-60V P-channel MOSFET, -12A, 135m\u03a9 @-10V, DPAK, QFET, 300mJ avalanche, planar DMOS","date_code":"","package_case":"DPAK (TO-252-3, 6.73 x 6.22 x 2.39 mm)","in_stock":8100,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/fqu17p06-d.pdf","price":"$0.35 @ 1ku","product_introduction":"The FQD17P06TM from onsemi is a P-channel enhancement-mode power MOSFET produced using Fairchild's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specifically tailored to reduce on-state resistance while providing superior switching performance and high avalanche energy strength. Rated at -60 V drain-source voltage and -12 A continuous drain current, the device features RDS(on) of 135 m\u03a9 maximum at VGS = -10 V, making it suitable for high-side load switching applications where an N-channel device would require a charge pump or bootstrap circuit. The low gate charge of 21 nC and Crss of 80 pF ensure efficient switching with minimal drive power. The device is 100% avalanche tested and rated for 300 mJ single-pulse avalanche energy.","working_principle":"The FQD17P06TM is a P-channel enhancement-mode vertical power MOSFET using planar stripe DMOS technology. (1) Cell Structure: Planar stripe DMOS cells with P-channel construction create a current path from source (P+ region) through the channel and drift region to the drain (P+ substrate). The stripe geometry provides consistent channel width and low on-resistance. (2) Gate Drive: Applying a negative gate voltage (below threshold -2.0 to -4.0 V) creates an inversion layer (N-type channel) in the P-body, allowing current flow from source to drain. Full enhancement at VGS = -10 V yields 135 m\u03a9 max RDS(on). (3) Body Diode: The intrinsic P-N junction between the body and drain forms a diode oriented for reverse conduction (drain to source), which can serve as a freewheeling diode in inductive load applications. (4) Avalanche Capability: The device is 100% tested for single-pulse avalanche energy of 300 mJ, meaning it can safely absorb energy from unclamped inductive kickback without damage.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (control terminal)<\/td><\/tr>
      2<\/td>Drain<\/td>Output<\/td>MOSFET drain (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>MOSFET source and body diode cathode<\/td><\/tr><\/table>","application_scenarios":"
      • High-side load switching in SMPS where P-channel eliminates bootstrap requirement<\/li>
      • Audio amplifier Class AB output stages requiring complementary P-channel device<\/li>
      • DC motor H-bridge control circuits with P-channel high-side switches<\/li>
      • LCD\/LED TV power management and backlight inverter circuits<\/li>
      • Battery protection and hot-swap circuits with simple gate drive<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        onsemi<\/td>FQU17P06TM<\/td>I-PAK<\/td>Same die, I-PAK package<\/td><\/tr>
        Infineon<\/td>IRF9Z34NPBF<\/td>TO-220<\/td>-60V, -12A, through-hole<\/td><\/tr>
        STMicroelectronics<\/td>STF5P5NH60<\/td>DPAK<\/td>-60V, -5A, lower RDS(on)<\/td><\/tr>
        Vishay<\/td>Si4463DY-T1-GE3<\/td>PowerPAK SO-8<\/td>-40V, -8.5A, SMD<\/td><\/tr>
        onsemi<\/td>FQD11P06TM<\/td>DPAK<\/td>-60V, -11A, similar<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7058","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7058"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7058\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7058"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7058"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7058"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7058"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}