{"id":7036,"date":"2026-06-23T02:14:11","date_gmt":"2026-06-23T02:14:11","guid":{"rendered":"https:\/\/materialparts.com\/k4b2g1646q-bck0\/"},"modified":"2026-06-23T02:14:11","modified_gmt":"2026-06-23T02:14:11","slug":"k4b2g1646q-bck0","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/k4b2g1646q-bck0\/","title":{"rendered":"K4B2G1646Q-BCK0"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The K4B2G1646Q-BCK0 from Samsung is a 2Gb DDR3 SDRAM organized as 16M x 16 x 8 banks in an FBGA-96 (8x13mm) package. It operates at 1600Mbps (PC3-12800) with CL=11 latency and 1.5V supply, providing high-density volatile memory for computing and embedded applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Storage Capacity<\/td>\n2Gb (256MB)<\/td>\n<\/tr>\n
Organization<\/td>\n16M x 16 x 8 Banks<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nDDR3 SDRAM<\/td>\n<\/tr>\n
\u0645\u0639\u062f\u0644 \u0627\u0644\u0628\u064a\u0627\u0646\u0627\u062a<\/td>\n1600Mbps (PC3-12800)<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n1.5V (VDD\/VDDQ)<\/td>\n<\/tr>\n
CAS Latency<\/td>\n11 (CL=11 @ 1600Mbps)<\/td>\n<\/tr>\n
Refresh<\/td>\n8192 times \/ 64ms<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nFBGA-96 (8 x 13mm)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n0\u00b0C ~ +85\u00b0C (Commercial)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • DDR3 SDRAM interface with 8n prefetch architecture<\/li>\n
  • 1600Mbps data rate for high-bandwidth applications<\/li>\n
  • 1.5V power supply with support for 1.35V operation<\/li>\n
  • Programmable CAS latency (CL5, CL6, CL7, CL8, CL9, CL11)<\/li>\n
  • On-die termination (ODT) for signal integrity<\/li>\n
  • Write leveling for fly-by topology compliance<\/li>\n
  • Asynchronous reset for initialization<\/li>\n
  • Self-refresh mode for low-power operation<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Desktop and laptop computer memory modules<\/li>\n
    • Embedded computing and networking<\/li>\n
    • Graphics frame buffers<\/li>\n
    • Industrial computing systems<\/li>\n
    • Digital signage and display systems<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The K4B2G1646Q-BCK0 from Samsung is a 2Gb DDR3 SDRAM organized as 16M x 16 x 8 banks in an FBGA-96 (8x13mm) package. It operates at 1600Mbps (PC3-12800) with CL=11 latency and 1.5V supply, providing high-density volatile memory for computing and embedded applications. Key Specifications Storage Capacity 2Gb (256MB) Organization 16M x 16 x […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[162],"class_list":["post-7036","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-samsung"],"acf":{"brief_explanation":"2Gb DDR3 SDRAM, 16Mx16, 1600Mbps PC3-12800, CL=11, 1.5V in FBGA-96","date_code":"","package_case":"FBGA-96 (8.00 x 13.00 x 1.00 mm)","in_stock":7126,"datasheet":"https:\/\/www.samsung.com\/semiconductor\/dram\/ddr3\/","price":"$3.20 @ 1ku","product_introduction":"The K4B2G1646Q-BCK0 from Samsung is a 2Gb (256MB) DDR3 SDRAM device organized as 16M words x 16 bits x 8 banks. It complies with the JEDEC DDR3 SDRAM standard and operates at a maximum data rate of 1600Mbps (PC3-12800). The device uses an 8n prefetch architecture that transfers 8 data words per clock cycle, enabling high bandwidth at moderate clock frequencies. The 1.5V supply voltage reduces power consumption compared to DDR2 (1.8V), while the 1.35V low-power option further reduces power for energy-conscious designs. On-die termination (ODT) eliminates the need for external termination resistors on the data lines, improving signal integrity. The FBGA-96 package provides a compact footprint suitable for memory module and on-board designs.","working_principle":"The K4B2G1646Q uses a double data rate (DDR) architecture that transfers data on both the rising and falling edges of the clock, achieving twice the bandwidth of single-data-rate SDRAM at the same clock frequency. The 8n prefetch means that 8 data words are fetched from the DRAM array in parallel for each read or write command, and these are serialized over 4 clock cycles (8 data edges). The DDR3 protocol uses a fly-by topology for command\/address signals with write leveling to compensate for flight time skew across the memory bus. On-die termination (ODT) provides programmable termination resistance (RTT) on DQ, DQS, and DM pins to match the transmission line impedance. Refresh is required 8192 times every 64ms to maintain data integrity. Self-refresh mode allows the DRAM to autonomously refresh its cells while consuming minimal power.","pin_description":"
      Pin<\/th>Name<\/th>Function<\/th><\/tr>
      A0-A9, A10\/AP, A11, A12\/BC<\/td>Address<\/td>Row\/column address and auto-precharge\/bank select<\/td><\/tr>
      BA0-BA2<\/td>Bank Address<\/td>Selects one of 8 internal banks<\/td><\/tr>
      CK\/CK_n<\/td>Clock<\/td>Differential clock input<\/td><\/tr>
      CKE<\/td>Clock Enable<\/td>Enables internal clock and self-refresh<\/td><\/tr>
      CS_n<\/td>Chip Select<\/td>Enables command decoder<\/td><\/tr>
      RAS_n, CAS_n, WE_n<\/td>Command<\/td>Command inputs (row, column, write enable)<\/td><\/tr>
      DQ0-DQ15<\/td>Data<\/td>Bidirectional data bus<\/td><\/tr>
      DQS0-DQS1<\/td>Data Strobe<\/td>Differential data strobe for read\/write<\/td><\/tr>
      DM0-DM1<\/td>Data Mask<\/td>Write data mask<\/td><\/tr>
      ODT<\/td>On-Die Termination<\/td>Enables internal termination resistance<\/td><\/tr>
      RESET_n<\/td>Reset<\/td>Asynchronous reset (active low)<\/td><\/tr><\/table>","application_scenarios":"
      • Embedded Linux System Memory<\/b>: 256MB capacity sufficient for embedded Linux rootfs and application memory; 1600Mbps provides 2.56GB\/s bandwidth<\/li>
      • Networking Equipment Buffer<\/b>: High-bandwidth DDR3 interface buffers packet data at line rates up to 10Gbps<\/li>
      • Industrial Computing<\/b>: 1.5V DDR3 reduces power compared to DDR2; wide commercial temperature range suits controlled environments<\/li>
      • Digital Signage Frame Buffer<\/b>: 256MB stores uncompressed video frames for 1080p display pipeline<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        K4B4G1646Q-BYK0<\/td>Samsung<\/td>4Gb (512MB), x16, DDR3, same package<\/td><\/tr>
        MT41K256M16TW-107<\/td>Micron<\/td>4Gb, x16, DDR3L, 1600Mbps<\/td><\/tr>
        H5TQ4G63CFR-RDC<\/td>SK Hynix<\/td>4Gb, x16, DDR3, 1600Mbps<\/td><\/tr>
        EM68B16CWQH-25H<\/td>Etron<\/td>2Gb, x16, DDR3, 1600Mbps<\/td><\/tr>
        IS43TR16128B-125KBL<\/td>ISSI<\/td>2Gb, x16, DDR3, 1600Mbps, industrial<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7036","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7036"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7036\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7036"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7036"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7036"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7036"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}