{"id":7014,"date":"2026-06-23T02:04:40","date_gmt":"2026-06-23T02:04:40","guid":{"rendered":"https:\/\/materialparts.com\/mmbt4401-7-f\/"},"modified":"2026-06-23T02:04:40","modified_gmt":"2026-06-23T02:04:40","slug":"mmbt4401-7-f","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/mmbt4401-7-f\/","title":{"rendered":"MMBT4401-7-F"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The MMBT4401-7-F from onsemi is an NPN general-purpose small-signal transistor in a compact SOT-23-3 surface-mount package. It offers a VCEO of 40V, continuous collector current of 600mA, and DC current gain of 100-300 at 150mA, making it suitable for medium-power switching and amplification in space-constrained applications.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>NPN General-Purpose Transistor<\/td>\n<\/tr>\n<tr>\n<td>VCEO<\/td>\n<td>40V<\/td>\n<\/tr>\n<tr>\n<td>IC (Continuous)<\/td>\n<td>600mA<\/td>\n<\/tr>\n<tr>\n<td>hFE (\u0643\u0633\u0628 \u0627\u0644\u062a\u064a\u0627\u0631 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n<td>100 ~ 300 @ IC=150mA<\/td>\n<\/tr>\n<tr>\n<td>VCE(sat)<\/td>\n<td>0.75V (Max) @ IC=500mA, IB=50mA<\/td>\n<\/tr>\n<tr>\n<td>fT (Transition Frequency)<\/td>\n<td>250MHz (Typical)<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>350mW @ TA=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SOT-23-3 (TO-236-3)<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55\u00b0C ~ +150\u00b0C<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>High current capability (600mA) in a small SOT-23 package<\/li>\n<li>Wide hFE range for design flexibility<\/li>\n<li>Low saturation voltage for efficient switching<\/li>\n<li>High transition frequency (250MHz) for RF applications<\/li>\n<li>Lead-free and RoHS compliant<\/li>\n<li>Tape and reel packaging for automated assembly<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>General-purpose switching and amplification<\/li>\n<li>LED driver circuits<\/li>\n<li>Relay and solenoid drivers<\/li>\n<li>Logic-level translation<\/li>\n<li>Power management load switches<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The MMBT4401-7-F from onsemi is an NPN general-purpose small-signal transistor in a compact SOT-23-3 surface-mount package. It offers a VCEO of 40V, continuous collector current of 600mA, and DC current gain of 100-300 at 150mA, making it suitable for medium-power switching and amplification in space-constrained applications. Key Specifications Type NPN General-Purpose Transistor VCEO [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[57,13],"tags":[],"chip_brand":[144],"class_list":["post-7014","post","type-post","status-publish","format-standard","hentry","category-insulated-gate-bipolar-transistors-igbt","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"NPN small-signal transistor, 40V VCEO, 600mA IC, hFE 100-300, 250MHz fT in SOT-23-3 package","date_code":"","package_case":"SOT-23-3 (2.90 x 1.30 x 1.00 mm)","in_stock":12983,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/mmbt4401-d.pdf","price":"$0.04 @ 1ku","product_introduction":"The MMBT4401-7-F is an NPN general-purpose bipolar junction transistor from onsemi in a surface-mount SOT-23-3 package. It is the SMD equivalent of the popular 2N4401 through-hole transistor, offering 40V collector-emitter breakdown voltage and 600mA continuous collector current. The device features a DC current gain (hFE) of 100 to 300 at 150mA collector current, making it well-suited for medium-power driver and switching applications. The 250MHz transition frequency enables use in RF amplifier stages. Its combination of moderate current handling, wide gain bandwidth, and compact footprint makes it a versatile choice for general-purpose circuit design.","working_principle":"The MMBT4401 operates as a bipolar junction transistor (BJT) in common-emitter, common-base, or common-collector configurations. In the active region, a small base current (IB) controls a proportionally larger collector current (IC) according to the DC current gain hFE = IC\/IB. For switching applications, the transistor is driven between cutoff (IB=0, IC approximately 0) and saturation (VCE approximately VCE(sat)). The base-emitter junction is forward-biased at approximately 0.7V to turn the device on. In saturation, both junctions are forward-biased and VCE drops to typically 0.4-0.75V depending on IC and IB. The 250MHz transition frequency (fT) represents the frequency at which the common-emitter current gain drops to unity.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Base<\/td><td>Control input<\/td><\/tr><tr><td>2<\/td><td>Emitter<\/td><td>Current output<\/td><\/tr><tr><td>3<\/td><td>Collector<\/td><td>Main current terminal<\/td><\/tr><\/table>","application_scenarios":"<ul><li><b>LED Array Driver<\/b>: 600mA capability drives multiple high-brightness LEDs with PWM dimming through base current control<\/li><li><b>Relay\/Solenoid Switch<\/b>: Low VCE(sat) minimizes power dissipation when driving 5V\/12V relay coils up to 600mA<\/li><li><b>Logic Level Shifter<\/b>: Shifts 3.3V logic to 5V or 12V domain using common-emitter switch configuration<\/li><li><b>Small-Signal RF Amplifier<\/b>: 250MHz fT enables use as VHF preamplifier or mixer in the 50-150MHz range<\/li><\/ul>","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><\/tr><tr><td>MMBT4403-7-F<\/td><td>onsemi<\/td><td>PNP complement of MMBT4401<\/td><\/tr><tr><td>MMBT2222A-7-F<\/td><td>onsemi<\/td><td>Similar, 40V\/600mA, 300MHz fT<\/td><\/tr><tr><td>BC847C<\/td><td>Nexperia<\/td><td>45V\/100mA, higher hFE (420-800)<\/td><\/tr><tr><td>MMBT3904-7-F<\/td><td>onsemi<\/td><td>40V\/200mA, lower power, 300MHz fT<\/td><\/tr><tr><td>MMBT5551-7-F<\/td><td>onsemi<\/td><td>160V\/600mA, high-voltage version<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7014","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=7014"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/7014\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=7014"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=7014"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=7014"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=7014"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}