{"id":6898,"date":"2026-06-22T01:57:17","date_gmt":"2026-06-22T01:57:17","guid":{"rendered":"https:\/\/materialparts.com\/tpc8120\/"},"modified":"2026-06-22T01:57:17","modified_gmt":"2026-06-22T01:57:17","slug":"tpc8120","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/tpc8120\/","title":{"rendered":"TPC8120"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The TPC8120 from Toshiba is a -30V, -5A P-channel power MOSFET with 30mOhm RDS(ON) in an SOP-8 surface mount package.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>P-Channel Power MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>-30 V<\/td>\n<\/tr>\n<tr>\n<td>\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n<td>-5 A @ VGS=-10V<\/td>\n<\/tr>\n<tr>\n<td>RDS(ON)<\/td>\n<td>30 mOhm (typical) @ VGS=-10V<\/td>\n<\/tr>\n<tr>\n<td>VGS(th)<\/td>\n<td>-0.8V to -2.0V<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>2 W @ TA=25C<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SOP-8 (5.2 x 6.2 x 1.7 mm)<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55C to +150C (TJ)<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>-30V, -5A P-channel MOSFET<\/li>\n<li>Ultra-low 30mOhm RDS(ON) at VGS=-10V<\/li>\n<li>Logic-level gate threshold (-0.8V to -2.0V)<\/li>\n<li>SOP-8 surface mount package<\/li>\n<li>\u0634\u062d\u0646\u0629 \u0628\u0648\u0627\u0628\u0629 \u0645\u0646\u062e\u0641\u0636\u0629 \u0644\u0644\u062a\u0628\u062f\u064a\u0644 \u0627\u0644\u0633\u0631\u064a\u0639<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Battery load switches<\/li>\n<li>Power management switching<\/li>\n<li>DC-DC converter high-side switch<\/li>\n<li>Reverse polarity protection<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The TPC8120 from Toshiba is a -30V, -5A P-channel power MOSFET with 30mOhm RDS(ON) in an SOP-8 surface mount package. Key Specifications Type P-Channel Power MOSFET VDS -30 V ID -5 A @ VGS=-10V RDS(ON) 30 mOhm (typical) @ VGS=-10V VGS(th) -0.8V to -2.0V Power Dissipation 2 W @ TA=25C Package SOP-8 (5.2 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[169],"class_list":["post-6898","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-toshiba"],"acf":{"brief_explanation":"P-CH MOSFET, -30V -5A, 30mOhm, SOP-8","date_code":"","package_case":"SOP-8 (5.2 x 6.2 x 1.7 mm)","in_stock":7890,"datasheet":"https:\/\/toshiba.semicon-storage.com\/cn\/semiconductor\/product\/mosfet\/detail.TPC8120.html","price":"$0.35 @ 1ku","product_introduction":"The TPC8120 from Toshiba is a -30V, -5A P-channel power MOSFET in an SOP-8 surface mount package. The 30 mOhm typical RDS(ON) at VGS=-10V provides extremely low conduction loss for high-efficiency switching applications. The logic-level gate threshold (-0.8V to -2.0V) allows direct drive from 3.3V or 5V microcontrollers. The SOP-8 package with exposed drain pad provides good thermal performance with 2W power dissipation at 25C ambient. The device is ideal for battery-powered load switches, DC-DC converter high-side switches, and reverse polarity protection circuits. The low RDS(ON) minimizes voltage drop and power dissipation in high-current applications.","working_principle":"The TPC8120 is a vertical P-channel power MOSFET constructed using a trench-gate structure. The P-type body and N-type epitaxial layer form the basic MOSFET structure, with deep trenches etched into the silicon and lined with gate oxide and polysilicon to create the gate electrodes. When VGS exceeds the threshold voltage (VGS(th) = -0.8V to -2.0V), an inversion layer (P-channel) forms under the gate oxide, connecting the P+ source to the P+ drain through the N-type body. The 30 mOhm RDS(ON) is achieved through a high cell density trench structure that maximizes channel width per unit area. The P-channel MOSFET has approximately 2-3x higher RDS(ON) than an equivalent N-channel device due to the lower hole mobility compared to electron mobility. However, P-channel MOSFETs simplify high-side switch designs because the gate can be driven relative to the source (connected to VCC), eliminating the need for a bootstrap circuit.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal (connected to VCC)<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal (connected to VCC)<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal (connected to VCC)<\/td><\/tr><tr><td>4<\/td><td>Gate<\/td><td>Input<\/td><td>Gate terminal<\/td><\/tr><tr><td>5<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to load)<\/td><\/tr><tr><td>6<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to load)<\/td><\/tr><tr><td>7<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to load)<\/td><\/tr><tr><td>8<\/td><td>Drain<\/td><td>Power<\/td><td>Drain terminal (connected to load)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Li-ion battery pack load switch with 30mOhm RDS(ON) and 5A rating<\/li><li>5V to 3.3V LDO bypass switch with logic-level gate drive from MCU<\/li><li>DC-DC buck converter high-side switch with 30mOhm for 92%+ efficiency<\/li><li>USB power delivery reverse polarity protection at 5A<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Toshiba<\/td><td>TPC8107<\/td><td>SOP-8<\/td><td>Lower RDS(ON) version<\/td><\/tr><tr><td>Infineon<\/td><td>IRF9310TRPBF<\/td><td>SOP-8<\/td><td>-30V, -6.5A, similar class<\/td><\/tr><tr><td>onsemi<\/td><td>FDC653P<\/td><td>SOT-223<\/td><td>-20V, -2A, smaller package<\/td><\/tr><tr><td>Vishay<\/td><td>Si2333DS<\/td><td>SOT-23<\/td><td>-12V, -3A, much smaller<\/td><\/tr><tr><td>Toshiba<\/td><td>TPC8108<\/td><td>SOP-8<\/td><td>-30V, -6A, higher current<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6898","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6898"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6898\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6898"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6898"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6898"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6898"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}