{"id":6841,"date":"2026-06-21T13:09:11","date_gmt":"2026-06-21T13:09:11","guid":{"rendered":"https:\/\/materialparts.com\/bsc109n10ns3g\/"},"modified":"2026-06-21T13:09:11","modified_gmt":"2026-06-21T13:09:11","slug":"bsc109n10ns3g","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/bsc109n10ns3g\/","title":{"rendered":"BSC109N10NS3G"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The BSC109N10NS3G from Infineon Technologies is a 100V, 10.9 mOhm OptiMOS N-channel power MOSFET with 36A current rating in a SuperSO-8 (PG-TDSON-8) package.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>100V N-Channel OptiMOS Power MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>100 V<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) (max)<\/td>\n<td>10.9 mOhm @ VGS=10V<\/td>\n<\/tr>\n<tr>\n<td>\u0628\u0637\u0627\u0642\u0629 \u0627\u0644\u0647\u0648\u064a\u0629<\/td>\n<td>36 A @ TC=25C<\/td>\n<\/tr>\n<tr>\n<td>Gate Charge (Qg)<\/td>\n<td>38 nC (typical)<\/td>\n<\/tr>\n<tr>\n<td>Input Capacitance (Ciss)<\/td>\n<td>3010 pF (typical)<\/td>\n<\/tr>\n<tr>\n<td>VGS(th)<\/td>\n<td>2.1 V (typical)<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SuperSO-8 (PG-TDSON-8)<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55C to +175C (TJ)<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>10.9 mOhm ultra-low RDS(on) at 100V<\/li>\n<li>36A continuous drain current<\/li>\n<li>SuperSO-8 package with exposed die pad<\/li>\n<li>100% avalanche tested<\/li>\n<li>OptiMOS technology for high efficiency<\/li>\n<li>RoHS compliant<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>DC-DC converter synchronous rectification<\/li>\n<li>Motor drive half-bridge<\/li>\n<li>Hot-swap and ORing power switching<\/li>\n<li>Battery management system switching<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The BSC109N10NS3G from Infineon Technologies is a 100V, 10.9 mOhm OptiMOS N-channel power MOSFET with 36A current rating in a SuperSO-8 (PG-TDSON-8) package. Key Specifications Type 100V N-Channel OptiMOS Power MOSFET VDS 100 V RDS(on) (max) 10.9 mOhm @ VGS=10V ID 36 A @ TC=25C Gate Charge (Qg) 38 nC (typical) Input Capacitance [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[173],"class_list":["post-6841","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"100V OptiMOS N-CH MOSFET, 10.9mOhm, 36A, SuperSO-8","date_code":"","package_case":"SuperSO-8 \/ PG-TDSON-8 (5.0 x 6.0 x 1.0 mm)","in_stock":8765,"datasheet":"https:\/\/www.infineon.com\/dgdl\/BSC109N10NS3_Rev2.3.pdf","price":"$1.20 @ 1ku","product_introduction":"The BSC109N10NS3G from Infineon Technologies is a 100V N-channel OptiMOS power MOSFET with 10.9 mOhm maximum on-resistance in a SuperSO-8 surface mount package. The OptiMOS technology uses charge-compensated superjunction structures to achieve the very low specific on-resistance (RDS(on) x Area) that enables high-efficiency power conversion. The 36A continuous current rating and 175C maximum junction temperature support demanding applications. The SuperSO-8 (PG-TDSON-8) package features an exposed die pad for efficient heat dissipation to the PCB, with a junction-to-mounting base thermal resistance of approximately 1.5 K\/W. The 38 nC gate charge supports switching frequencies up to several hundred kHz.","working_principle":"The BSC109N10NS3G uses Infineon's OptiMOS superjunction technology where alternating N and P columns in the drift region provide lateral depletion during the blocking state, supporting the 100V rating with a thinner drift region than conventional MOSFETs. This thinner drift region reduces on-resistance to 10.9 mOhm. The device is constructed with a vertical DMOS cell structure where the current flows vertically from the source (top) through the channel and drift region to the drain (bottom\/die pad). The SuperSO-8 package bonds the die pad directly to the PCB copper for thermal management. The 38 nC total gate charge determines the switching speed and gate drive power: P_gate = Qg x VGS x f_sw. At 100 kHz switching frequency with 10V gate drive, the gate drive power is approximately 38 mW.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Source<\/td><td>I\/O<\/td><td>Source terminal<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>I\/O<\/td><td>Source terminal<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>I\/O<\/td><td>Source terminal<\/td><\/tr><tr><td>4<\/td><td>Gate<\/td><td>Input<\/td><td>Gate terminal<\/td><\/tr><tr><td>5-8<\/td><td>Drain (pad)<\/td><td>I\/O<\/td><td>Drain (exposed die pad on bottom)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>48V DC-DC converter synchronous rectifier with 10.9mOhm conduction loss<\/li><li>BLDC motor inverter half-bridge switch at 100kHz PWM<\/li><li>Telecom 48V hot-swap MOSFET with 36A rating<\/li><li>Battery management system charge\/discharge switch<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>BSC060N10NS3G<\/td><td>SuperSO-8<\/td><td>6 mOhm, lower RDS(on)<\/td><\/tr><tr><td>Infineon<\/td><td>BSC160N10NS3G<\/td><td>SuperSO-8<\/td><td>16 mOhm, higher RDS(on)<\/td><\/tr><tr><td>onsemi<\/td><td>NTMFS5C612N<\/td><td>PowerPAK SO-8<\/td><td>100V, 7.3mOhm, similar class<\/td><\/tr><tr><td>Vishay<\/td><td>SiRA12DP<\/td><td>PowerPAK SO-8<\/td><td>100V, 11mOhm, equivalent<\/td><\/tr><tr><td>Infineon<\/td><td>IPB109N10N3G<\/td><td>D2PAK<\/td><td>Same die, D2PAK package<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6841","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6841"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6841\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6841"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6841"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6841"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6841"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}