{"id":6784,"date":"2026-06-21T10:48:13","date_gmt":"2026-06-21T10:48:13","guid":{"rendered":"https:\/\/materialparts.com\/bc856bs\/"},"modified":"2026-06-21T10:48:13","modified_gmt":"2026-06-21T10:48:13","slug":"bc856bs","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/bc856bs\/","title":{"rendered":"BC856BS"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The BC856BS from Nexperia is a dual PNP general-purpose transistor pair in a SOT363 (SC-88) package, rated at 65 V VCEO and 100 mA IC per transistor, matched for current mirror and differential pair applications.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>Dual PNP General-Purpose Transistor<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062a\u0643\u0648\u064a\u0646<\/td>\n<td>Dual, common emitter<\/td>\n<\/tr>\n<tr>\n<td>VCEO<\/td>\n<td>-65 V<\/td>\n<\/tr>\n<tr>\n<td>IC (\u062a\u064a\u0627\u0631 \u0627\u0644\u0645\u062c\u0645\u0639)<\/td>\n<td>-100 mA (per transistor)<\/td>\n<\/tr>\n<tr>\n<td>hFE (Current Gain)<\/td>\n<td>125 to 630 (BC856B grade)<\/td>\n<\/tr>\n<tr>\n<td>FT (Transition Frequency)<\/td>\n<td>100 MHz<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>330 mW (total)<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SOT363 (SC-88, 2.1 x 1.25 mm)<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55C to +150C<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Dual matched PNP transistor pair in one package<\/li>\n<li>65 V collector-emitter voltage rating<\/li>\n<li>100 mA collector current per transistor<\/li>\n<li>High hFE (125-630 for B suffix)<\/li>\n<li>Ultra-small SOT363 footprint<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Current mirror circuits<\/li>\n<li>Differential amplifier input pairs<\/li>\n<li>Temperature-compensated bias networks<\/li>\n<li>General-purpose switching and amplification<\/li>\n<li>Signal routing and multiplexing<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The BC856BS from Nexperia is a dual PNP general-purpose transistor pair in a SOT363 (SC-88) package, rated at 65 V VCEO and 100 mA IC per transistor, matched for current mirror and differential pair applications. Key Specifications Type Dual PNP General-Purpose Transistor Configuration Dual, common emitter VCEO -65 V IC (Collector Current) -100 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[140],"class_list":["post-6784","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-nexperia"],"acf":{"brief_explanation":"Dual PNP Transistor, -65V, -100mA, hFE 125-630, SOT363","date_code":"","package_case":"SOT363 (SC-88, 2.1 x 1.25 x 0.95 mm)","in_stock":9234,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/BC856BS.pdf","price":"$0.06 @ 1ku","product_introduction":"The BC856BS from Nexperia is a dual PNP general-purpose transistor in an ultra-compact SOT363 (SC-88) package. The two transistors are fabricated on the same die, ensuring close matching of parameters such as hFE and VBE, which is critical for current mirror and differential pair applications. The -65 V VCEO and -100 mA IC ratings make the device suitable for a wide range of analog signal processing and general-purpose switching applications. The B suffix indicates hFE range of 125-630. The tiny SOT363 footprint (2.1 x 1.25 mm) enables high-density PCB layouts.","working_principle":"The BC856BS contains two PNP bipolar junction transistors (BJTs) fabricated on the same silicon die. Each transistor has three semiconductor layers (P-N-P) forming two P-N junctions: the base-emitter junction and the base-collector junction. In normal active operation, the base-emitter junction is forward-biased and the base-collector junction is reverse-biased. Current flowing into the base (conventional current direction) modulates the conductivity of the base region, allowing a much larger current to flow from emitter to collector. The current gain (hFE) is the ratio of collector current to base current, ranging from 125 to 630 for the B grade. Because both transistors share the same thermal environment and are fabricated simultaneously, their VBE and hFE are closely matched, enabling accurate current mirror operation.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>E1<\/td><td>Power<\/td><td>Transistor 1 emitter<\/td><\/tr><tr><td>2<\/td><td>B1<\/td><td>Input<\/td><td>Transistor 1 base<\/td><\/tr><tr><td>3<\/td><td>C2<\/td><td>Power<\/td><td>Transistor 2 collector<\/td><\/tr><tr><td>4<\/td><td>E2<\/td><td>Power<\/td><td>Transistor 2 emitter<\/td><\/tr><tr><td>5<\/td><td>B2<\/td><td>Input<\/td><td>Transistor 2 base<\/td><\/tr><tr><td>6<\/td><td>C1<\/td><td>Power<\/td><td>Transistor 1 collector<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Precision current mirror bias circuits for op-amp stages<\/li><li>Differential amplifier input pair with matched VBE<\/li><li>Temperature-compensated reference voltage networks<\/li><li>General-purpose small-signal amplification and switching<\/li><li>Signal routing and analog multiplexing in portable devices<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Nexperia<\/td><td>BC856BVS<\/td><td>SOT753<\/td><td>6-pin, same function, different pinout<\/td><\/tr><tr><td>Nexperia<\/td><td>BC856BS,115<\/td><td>SOT363<\/td><td>Same device, tape and reel<\/td><\/tr><tr><td>onsemi<\/td><td>BC856BWT1G<\/td><td>SOT363<\/td><td>Single PNP, same series<\/td><\/tr><tr><td>Infineon<\/td><td>BC856BWE6327<\/td><td>SOT323<\/td><td>Single PNP, similar specs<\/td><\/tr><tr><td>Diodes Inc<\/td><td>BC856BS-7-F<\/td><td>SOT363<\/td><td>Dual PNP, equivalent<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6784","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6784"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6784\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6784"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6784"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6784"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6784"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}