{"id":6773,"date":"2026-06-21T10:47:55","date_gmt":"2026-06-21T10:47:55","guid":{"rendered":"https:\/\/materialparts.com\/csd87351q5d\/"},"modified":"2026-06-21T10:47:55","modified_gmt":"2026-06-21T10:47:55","slug":"csd87351q5d","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/csd87351q5d\/","title":{"rendered":"CSD87351Q5D"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The CSD87351Q5D from Texas Instruments is a 40 V N-channel MOSFET half-bridge power stage in a 5-pin SON package, optimized for high-frequency synchronous buck converters with 3.5 mOhm high-side and 2.6 mOhm low-side RDS(on).<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>N-Channel MOSFET Half-Bridge Power Stage<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>40 V<\/td>\n<\/tr>\n<tr>\n<td>High-Side RDS(on)<\/td>\n<td>3.5 mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>Low-Side RDS(on)<\/td>\n<td>2.6 mOhm (max)<\/td>\n<\/tr>\n<tr>\n<td>Continuous Current<\/td>\n<td>12 A<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0631\u062f\u062f \u0627\u0644\u062a\u062d\u0648\u064a\u0644<\/td>\n<td>Up to 1.5 MHz<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SON-5 (5 x 6 mm, PowerPAD)<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-40C to 150C<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Co-packaged half-bridge for minimum parasitic inductance<\/li>\n<li>Ultra-low RDS(on) for high efficiency<\/li>\n<li>Monolithically integrated Schottky body diode<\/li>\n<li>Optimized for high-frequency synchronous buck converters<\/li>\n<li>5-pin SON package with PowerPAD thermal enhancement<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Point-of-load buck converters for servers and telecom<\/li>\n<li>Notebook and desktop VRM power stages<\/li>\n<li>High-frequency DC-DC converter output stages<\/li>\n<li>Embedded computing core voltage regulators<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The CSD87351Q5D from Texas Instruments is a 40 V N-channel MOSFET half-bridge power stage in a 5-pin SON package, optimized for high-frequency synchronous buck converters with 3.5 mOhm high-side and 2.6 mOhm low-side RDS(on). Key Specifications Type N-Channel MOSFET Half-Bridge Power Stage VDS 40 V High-Side RDS(on) 3.5 mOhm (max) Low-Side RDS(on) 2.6 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[138],"class_list":["post-6773","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-ti"],"acf":{"brief_explanation":"40V Half-Bridge MOSFET Power Stage, 3.5\/2.6mOhm, 12A, SON-5","date_code":"","package_case":"SON-5 (5.0 x 6.0 x 0.9 mm, PowerPAD)","in_stock":7234,"datasheet":"https:\/\/www.ti.com\/lit\/ds\/symlink\/csd87351q5d.pdf","price":"$0.85 @ 1ku","product_introduction":"The CSD87351Q5D from Texas Instruments is a 40 V N-channel MOSFET half-bridge power stage optimized for high-frequency synchronous buck converters. By co-packaging the high-side and low-side MOSFETs in a single SON-5 package, parasitic inductance between the two switches is minimized, reducing ringing and switching losses. The high-side MOSFET features 3.5 mOhm max RDS(on) and the low-side features 2.6 mOhm max RDS(on), enabling high efficiency at output currents up to 12 A. The integrated Schottky body diode in the low-side MOSFET reduces reverse recovery losses. The PowerPAD exposed pad provides excellent thermal performance for compact designs.","working_principle":"The CSD87351Q5D integrates two N-channel MOSFETs in a half-bridge configuration. The high-side MOSFET (control FET) connects the input voltage to the output inductor (SW node), and the low-side MOSFET (synchronous FET) connects the SW node to ground. During the on-time, the high-side MOSFET conducts, delivering energy to the inductor and load. During the off-time, the high-side turns off and the low-side MOSFET turns on, allowing the inductor current to freewheel through the low-side switch. The co-packaged design minimizes the parasitic loop inductance between the high-side drain, the SW node, and the low-side source, which reduces voltage overshoot and high-frequency ringing at the switch node. The integrated Schottky diode across the low-side MOSFET provides a low-forward-voltage path during the dead-time when both MOSFETs are off.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>VIN<\/td><td>Power<\/td><td>Input supply (connect to high-side drain)<\/td><\/tr><tr><td>2<\/td><td>SW<\/td><td>Output<\/td><td>Switch node (high-side source, low-side drain)<\/td><\/tr><tr><td>3<\/td><td>GND<\/td><td>Ground<\/td><td>Power ground (low-side source)<\/td><\/tr><tr><td>4<\/td><td>HSG<\/td><td>Input<\/td><td>High-side gate drive<\/td><\/tr><tr><td>5<\/td><td>LSG<\/td><td>Input<\/td><td>Low-side gate drive<\/td><\/tr><tr><td>Pad<\/td><td>GND<\/td><td>Ground<\/td><td>Exposed thermal pad (connect to GND)<\/td><\/tr><\/table>","application_scenarios":"<ul><li>Server VRM buck converter output stage at 500kHz-1.5MHz<\/li><li>Desktop CPU core voltage regulator power block<\/li><li>Notebook DC-DC converter compact power stage<\/li><li>Telecom POL converter high-efficiency output stage<\/li><li>Embedded computing 12V-to-core voltage regulation<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr><tr><td>Texas Instruments<\/td><td>CSD87353Q5D<\/td><td>SON-5<\/td><td>Higher current, 30V variant<\/td><\/tr><tr><td>Infineon<\/td><td>BSZ0908ND<\/td><td>PG-TDSON-8<\/td><td>Half-bridge, 30V, 8A<\/td><\/tr><tr><td>onsemi<\/td><td>NTMFS4C05N<\/td><td>PQFN-5x6<\/td><td>Half-bridge, 30V, 12A<\/td><\/tr><tr><td>Vishay<\/td><td>SiC773CD<\/td><td>PQFN-5x6<\/td><td>Half-bridge, 40V, 15A<\/td><\/tr><tr><td>Renesas<\/td><td>RJK0255DPB<\/td><td>PQFN-5x6<\/td><td>Half-bridge, 30V, 10A<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6773","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6773"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6773\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6773"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6773"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6773"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6773"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}