{"id":6702,"date":"2026-06-19T01:29:33","date_gmt":"2026-06-19T01:29:33","guid":{"rendered":"https:\/\/materialparts.com\/pmv65xp-2\/"},"modified":"2026-06-19T01:29:33","modified_gmt":"2026-06-19T01:29:33","slug":"pmv65xp-2","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/pmv65xp-2\/","title":{"rendered":"PMV65XP"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The PMV65XP from Nexperia is a -20V, -4.3A P-Channel enhancement mode Trench MOSFET with 74 m\u03a9 max on-resistance at VGS=-4.5V in a compact SOT-23 package. Featuring low threshold voltage (-0.65V typical) and Trench MOSFET technology, it is optimized for low-power DC-DC converters, load switching, and battery management in portable equipment.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0646\u0648\u0639 \u0627\u0644\u0642\u0646\u0627\u0629<\/td>\n<td>P-channel enhancement mode<\/td>\n<\/tr>\n<tr>\n<td>VDS (max)<\/td>\n<td>-20V<\/td>\n<\/tr>\n<tr>\n<td>ID (max)<\/td>\n<td>-4.3A @ TA=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) @ VGS=-4.5V<\/td>\n<td>74 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) @ VGS=-2.5V<\/td>\n<td>92 m\u03a9 max<\/td>\n<\/tr>\n<tr>\n<td>VGS(th) (typ)<\/td>\n<td>-0.65V<\/td>\n<\/tr>\n<tr>\n<td>VGS (max)<\/td>\n<td>\u00b112V<\/td>\n<\/tr>\n<tr>\n<td>QG @ VGS=-4.5V<\/td>\n<td>7.7 nC typical<\/td>\n<\/tr>\n<tr>\n<td>QGD<\/td>\n<td>1.65 nC typical<\/td>\n<\/tr>\n<tr>\n<td>CISS<\/td>\n<td>744 pF typical<\/td>\n<\/tr>\n<tr>\n<td>COSS<\/td>\n<td>65 pF typical<\/td>\n<\/tr>\n<tr>\n<td>Ptot<\/td>\n<td>480 mW @ TA=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>SOT-23 \/ TO-236AB (2.9\u00d71.3\u00d71.0 mm)<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Low threshold voltage: -0.65V typical for low-voltage drive<\/li>\n<li>Low on-resistance: 74 m\u03a9 at VGS=-4.5V<\/li>\n<li>Trench MOSFET technology for high power density<\/li>\n<li>Compact SOT-23 package for space-constrained designs<\/li>\n<li>Low gate charge: 7.7 nC for efficient switching<\/li>\n<li>Suitable for 2.5V and 3.3V logic drive<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Low-power DC-DC converters (buck, boost)<\/li>\n<li>Load switching and power routing<\/li>\n<li>Battery management and protection<\/li>\n<li>Battery-powered portable equipment<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The PMV65XP from Nexperia is a -20V, -4.3A P-Channel enhancement mode Trench MOSFET with 74 m\u03a9 max on-resistance at VGS=-4.5V in a compact SOT-23 package. Featuring low threshold voltage (-0.65V typical) and Trench MOSFET technology, it is optimized for low-power DC-DC converters, load switching, and battery management in portable equipment. Key Specifications Channel [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,24],"tags":[],"chip_brand":[140],"class_list":["post-6702","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-microcontrollers-processors","chip_brand-nexperia"],"acf":{"brief_explanation":"P-ch Trench MOSFET, -20V, -4.3A, 74m\u03a9, low Vth, SOT-23","date_code":"","package_case":"SOT-23 \/ TO-236AB (2.9\u00d71.3\u00d71.0 mm, 0.95mm pitch)","in_stock":90900,"datasheet":"https:\/\/assets.nexperia.com\/documents\/data-sheet\/PMV65XP.pdf","price":"$0.08 @ 1ku","product_introduction":"The PMV65XP from Nexperia is a -20V, -4.3A P-Channel Trench MOSFET with 74 m\u03a9 max RDS(on) at -4.5V and low -0.65V threshold voltage in a compact SOT-23 package. With 7.7 nC gate charge and Trench MOSFET technology, it is optimized for low-power DC-DC converters, load switching, and battery management in portable equipment driven from 2.5V\/3.3V logic.","working_principle":"The PMV65XP uses Nexperia's Trench MOSFET technology, which creates vertical gate trenches in the silicon die to increase channel density and reduce on-resistance. The low threshold voltage (-0.65V typical) allows the device to be driven from low-voltage logic (2.5V or 3.3V) without a dedicated gate driver. At VGS=-2.5V, RDS(on) is only 92 m\u03a9, making it highly efficient even at minimal gate drive. The 7.7 nC total gate charge ensures fast switching with minimal driving loss, critical for high-frequency DC-DC converters in battery-powered systems. As a P-channel MOSFET, it naturally suits high-side switching applications where the source is connected to the positive supply and the gate is pulled low to turn on.","pin_description":"<table>\n<tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr>\n<tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>Gate terminal (low threshold)<\/td><\/tr>\n<tr><td>2<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal (connects to V+)<\/td><\/tr>\n<tr><td>3<\/td><td>Drain<\/td><td>Output<\/td><td>Drain terminal (output to load)<\/td><\/tr>\n<\/table>","application_scenarios":"<ul>\n<li>Low-power DC-DC converters in portable electronics<\/li>\n<li>Load switching and power routing with 2.5V\/3.3V logic<\/li>\n<li>Battery management, protection, and power path control<\/li>\n<li>Battery-powered portable equipment with high-side switching<\/li>\n<\/ul>","alternative_models":"<table>\n<tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>Notes<\/th><\/tr>\n<tr><td>Nexperia<\/td><td>PMV65XPVL<\/td><td>SOT-23<\/td><td>Same die, different packing option<\/td><\/tr>\n<tr><td>Vishay<\/td><td>SI2301CDS<\/td><td>SOT-23<\/td><td>-20V, -2.2A, comparable P-ch<\/td><\/tr>\n<tr><td>ON Semi<\/td><td>NTR4101PT1G<\/td><td>SOT-23<\/td><td>-20V P-ch, similar application<\/td><\/tr>\n<tr><td>Infineon<\/td><td>BSS84<\/td><td>SOT-23<\/td><td>-50V, -130mA, higher voltage, lower current<\/td><\/tr>\n<tr><td>Nexperia<\/td><td>PMV48XPR<\/td><td>SOT-23<\/td><td>-30V, -4.2A, higher voltage version<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6702","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6702"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6702\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6702"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6702"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6702"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6702"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}