{"id":6665,"date":"2026-06-19T01:06:14","date_gmt":"2026-06-19T01:06:14","guid":{"rendered":"https:\/\/materialparts.com\/si2303cds-t1-ge3\/"},"modified":"2026-06-19T01:06:14","modified_gmt":"2026-06-19T01:06:14","slug":"si2303cds-t1-ge3","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/si2303cds-t1-ge3\/","title":{"rendered":"SI2303CDS-T1-GE3"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The SI2303CDS-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET MOSFET in a SOT-23-3 package. With 30V drain-source voltage, 2.7A continuous drain current, and 190 m\u03a9 max on-resistance at VGS=-10V, it is the industry-standard P-channel MOSFET for high-side load switching, battery disconnect, and power routing in portable electronics and computing devices.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0646\u0648\u0639<\/td>\nP-Channel Enhancement MOSFET (TrenchFET)<\/td>\n<\/tr>\n
VDS<\/td>\n-30V<\/td>\n<\/tr>\n
VGS<\/td>\n\u00b120V<\/td>\n<\/tr>\n
ID (Continuous)<\/td>\n-2.7A @ 25\u00b0C<\/td>\n<\/tr>\n
RDS(ON)<\/td>\n0.190\u03a9 max @ VGS=-10V<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-0.45V to -1.0V typical<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n8 nC @ VDS=-10V<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n155 pF @ VDS=-15V<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n1W (TA=25\u00b0C), 2.3W (TC=25\u00b0C)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55\u00b0C to +150\u00b0C (junction)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-23-3 (To-236)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • P-channel TrenchFET technology for low RDS(ON)<\/li>\n
  • 190 m\u03a9 max RDS(ON) at -10V gate drive<\/li>\n
  • Low threshold: -0.45V typical for logic-level drive<\/li>\n
  • 2.7A continuous drain current<\/li>\n
  • Low gate charge: 8 nC for fast switching<\/li>\n
  • Industry-standard SOT-23-3 pinout<\/li>\n
  • AEC-Q101 qualified version available<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side load switch for battery-powered devices<\/li>\n
    • Battery disconnect and power routing<\/li>\n
    • Load switch with P-channel for USB and peripheral power<\/li>\n
    • Motor H-bridge P-channel element<\/li>\n
    • Power management in notebook and tablet computers<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The SI2303CDS-T1-GE3 from Vishay Siliconix is a P-channel TrenchFET MOSFET in a SOT-23-3 package. With 30V drain-source voltage, 2.7A continuous drain current, and 190 m\u03a9 max on-resistance at VGS=-10V, it is the industry-standard P-channel MOSFET for high-side load switching, battery disconnect, and power routing in portable electronics and computing devices. Key Specifications Type […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[19,13],"tags":[],"chip_brand":[136],"class_list":["post-6665","post","type-post","status-publish","format-standard","hentry","category-analog-linear-ics","category-integrated-circuits-ics","chip_brand-vishay"],"acf":{"brief_explanation":"P-ch MOSFET, 30V, 2.7A, 190m\u03a9, SOT-23-3","date_code":"","package_case":"SOT-23-3 \/ TO-236 (2.9\u00d71.3\u00d71.0 mm, 1.9mm pitch)","in_stock":46000,"datasheet":"https:\/\/www.vishay.com\/docs\/68667\/si2303cd.pdf","price":"$0.08 @ 1ku","product_introduction":"The SI2303CDS-T1-GE3 from Vishay Siliconix is the industry-standard P-channel TrenchFET MOSFET in a SOT-23-3 package. With 30V VDS, 2.7A ID, and 190 m\u03a9 RDS(ON) at VGS=-10V, it is widely used for high-side load switching, battery disconnect, and power routing in portable electronics, computing devices, and USB peripheral power management.","working_principle":"The SI2303CDS-T1-GE3 is a P-channel enhancement mode MOSFET using Vishay's TrenchFET technology. When the gate-source voltage is pulled below the threshold (VGS < VGS(th) \u2248 -0.45V), an inversion layer forms in the P-body, creating a conductive channel between source and drain. As a P-channel device, the source is connected to the positive supply rail (high-side), and the drain connects to the load. Pulling the gate to ground turns the MOSFET on, connecting the supply to the load. This is simpler than N-channel high-side driving which requires a bootstrap voltage above the supply rail. The TrenchFET trench gate structure provides a larger channel width per die area, achieving low 190 m\u03a9 RDS(ON) in the tiny SOT-23-3 package.","pin_description":"\n
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>\n
      1<\/td>Gate<\/td>Input<\/td>MOSFET gate (pull to GND to turn on)<\/td><\/tr>\n
      2<\/td>Source<\/td>Power<\/td>MOSFET source (connect to positive rail)<\/td><\/tr>\n
      3<\/td>Drain<\/td>Output<\/td>MOSFET drain (connects to load)<\/td><\/tr>\n<\/table>","application_scenarios":"
        \n
      • High-side load switch for battery-powered portable devices<\/li>\n
      • Battery disconnect and power path selection in laptops<\/li>\n
      • USB and peripheral power switch controlled by MCU GPIO<\/li>\n
      • Motor H-bridge P-channel element paired with SI2302 N-channel<\/li>\n
      • Power management and sleep\/wake control in notebook computers<\/li>\n<\/ul>","alternative_models":"\n
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>\n
        Vishay<\/td>SI2303BDS-T1-GE3<\/td>SOT-23-3<\/td>Previous generation, slightly higher RDS(ON)<\/td><\/tr>\n
        Diodes Inc<\/td>SI2303CDS-T1-GE3<\/td>SOT-23-3<\/td>Cross-reference equivalent<\/td><\/tr>\n
        Vishay<\/td>SI2333DS-T1-GE3<\/td>SOT-23-3<\/td>Lower RDS(ON) (60m\u03a9), higher current<\/td><\/tr>\n
        ON Semi<\/td>NTR4101PT1G<\/td>SOT-23-3<\/td>30V, 2.6A P-channel, similar specs<\/td><\/tr>\n
        Nexperia<\/td>PMV65XP<\/td>SOT-23-3<\/td>-20V, 3.8A, lower voltage, higher current<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6665","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6665"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6665\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6665"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6665"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6665"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6665"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}