The IRF3205 from Infineon (formerly International Rectifier) is an N-channel power MOSFET rated at 55V and 110A with ultra-low Rds(on) of 8.0mOhm. In TO-220, it is the standard choice for high-current DC switching, motor drivers, and DC-DC converters where lowest conduction loss is critical.<\/p>\n
| \u0627\u0644\u0646\u0648\u0639<\/td>\n | N-Channel Power MOSFET<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| VDS<\/td>\n | 55V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u0627\u0644\u0647\u0648\u064a\u0629 (\u0645\u0633\u062a\u0645\u0631)<\/td>\n | 110A (at TC=25C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Rds(on)<\/td>\n | 8.0mOhm (max at VGS=10V)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| VGS(th)<\/td>\n | 2.0-4.0V<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| Qg (total gate charge)<\/td>\n | 146nC<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n | 200W (at TC=25C)<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n | TO-220<\/td>\n<\/tr>\n | |||||||||||||||||||||||||||
| \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n | -55 to +175 C (junction)<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The IRF3205 from Infineon (formerly International Rectifier) is an N-channel power MOSFET rated at 55V and 110A with ultra-low Rds(on) of 8.0mOhm. In TO-220, it is the standard choice for high-current DC switching, motor drivers, and DC-DC converters where lowest conduction loss is critical. Key Specifications Type N-Channel Power MOSFET VDS 55V ID […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[],"class_list":["post-6637","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets"],"acf":{"brief_explanation":"N-Channel MOSFET, 55V, 110A, 8mOhm Rds(on), TO-220","date_code":"","package_case":"TO-220","in_stock":2864,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irf3205.pdf","price":"$1.50 @ 1ku","product_introduction":"The IRF3205 from Infineon is an N-channel power MOSFET with industry-leading low on-resistance of 8.0mOhm maximum at VGS=10V. Rated at 55V and 110A in a TO-220 package, it is the standard MOSFET for high-current DC switching applications. The ultra-low Rds(on) minimizes conduction losses in motor drivers and DC-DC converters, where the MOSFET spends most of its time in the fully-on state. At 50A load, the conduction loss is only I2 x Rds(on) = 502 x 0.008 = 20W, far lower than higher-Rds(on) alternatives. The 146nC total gate charge requires a gate driver capable of supplying adequate peak current for fast switching, but is moderate for a device of this size. The IRF3205 has been the go-to MOSFET for DIY motor drivers, solar charge controllers, and battery management systems for over two decades.","working_principle":"The IRF3205 is a vertical power MOSFET using a DMOS (Double-Diffused MOS) structure. When VGS exceeds the threshold (2-4V), an inversion layer forms under the gate oxide, creating a conductive channel between source and drain. At VGS=10V, the channel is fully enhanced, achieving the minimum Rds(on) of 8.0mOhm. The vertical current flow from source (top) through the channel and drift region to the drain (substrate) provides the high current density. The 146nC gate charge represents the total charge that must be supplied to the gate to turn the device on: Qgs (gate-source, ~25nC) plus Qgd (Miller charge, ~100nC) plus the remainder. The Miller plateau region during switching is where VDS falls and most of the switching loss occurs. A gate driver with >1A peak current ensures fast switching through the Miller plateau.","pin_description":"
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