{"id":6503,"date":"2026-06-17T03:29:31","date_gmt":"2026-06-17T03:29:31","guid":{"rendered":"https:\/\/materialparts.com\/sts5pf30l\/"},"modified":"2026-06-17T03:29:31","modified_gmt":"2026-06-17T03:29:31","slug":"sts5pf30l","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/sts5pf30l\/","title":{"rendered":"STS5PF30L"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The STS5PF30L from STMicroelectronics is a P-channel 30V STripFET power MOSFET with 55 m\u03a9 maximum on-resistance at VGS=-10V and -5A continuous drain current in an SO-8 surface-mount package. It features logic-level gate drive and is suitable for low-side load switching and battery management applications.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<ul>\n<li>Channel Type: P-Channel (enhancement mode)<\/li>\n<li>VDS: -30V<\/li>\n<li>VGS: \u00b116V<\/li>\n<li>ID (continuous): -5A (TC=25\u00b0C), -4A (TC=100\u00b0C)<\/li>\n<li>IDM (pulsed): -20A<\/li>\n<li>RDS(on): 45 m\u03a9 typ, 55 m\u03a9 max @ VGS=-10V, ID=-2.5A<\/li>\n<li>RDS(on): 65 m\u03a9 max @ VGS=-4.5V, ID=-2.5A<\/li>\n<li>VGS(th): -1V to -2.5V (ID=-250\u00b5A)<\/li>\n<li>Qg: 16 nC max @ VGS=-5V<\/li>\n<li>Ciss: 1350 pF<\/li>\n<li>PTOT: 2.5W (TC=25\u00b0C)<\/li>\n<li>Operating Temperature: -55\u00b0C ~ 150\u00b0C<\/li>\n<li>Package: SO-8 (3.9mm width)<\/li>\n<\/ul>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Logic-level gate drive (fully enhanced at -4.5V)<\/li>\n<li>Low RDS(on): 55 m\u03a9 max at VGS=-10V<\/li>\n<li>STripFET trench technology for low on-resistance<\/li>\n<li>\u0634\u062d\u0646\u0629 \u0628\u0648\u0627\u0628\u0629 \u0645\u0646\u062e\u0641\u0636\u0629 \u0644\u0644\u062a\u0628\u062f\u064a\u0644 \u0627\u0644\u0633\u0631\u064a\u0639<\/li>\n<li>Source-drain diode with fast reverse recovery<\/li>\n<li>Surface-mount SO-8 package<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>Battery management and protection<\/li>\n<li>Load switching in portable devices<\/li>\n<li>Power routing and selection<\/li>\n<li>Motor drive H-bridge (P-side)<\/li>\n<li>DC-DC converter synchronous switch<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The STS5PF30L from STMicroelectronics is a P-channel 30V STripFET power MOSFET with 55 m\u03a9 maximum on-resistance at VGS=-10V and -5A continuous drain current in an SO-8 surface-mount package. It features logic-level gate drive and is suitable for low-side load switching and battery management applications. Key Specifications Channel Type: P-Channel (enhancement mode) VDS: -30V [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[142],"class_list":["post-6503","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-st"],"acf":{"brief_explanation":"P-CH MOSFET, -30V, -5A, 55m\u03a9 RDS(on), logic-level, SO-8, STripFET","date_code":"","package_case":"SO-8 (3.9mm width)","in_stock":6100,"datasheet":"https:\/\/www.st.com\/resource\/en\/datasheet\/sts5pf30l.pdf","price":"$0.62","product_introduction":"The STS5PF30L from STMicroelectronics is a P-channel power MOSFET built on STripFET trench technology, offering low on-resistance of 55 m\u03a9 maximum at VGS=-10V in a compact SO-8 surface-mount package. The device is rated for -30V drain-source voltage and -5A continuous drain current, making it suitable for battery-powered load switching and power management applications. The logic-level gate drive (fully enhanced at -4.5V) allows direct interface with 3.3V and 5V microcontrollers without additional gate drive circuitry. The low 16 nC gate charge enables efficient high-frequency switching in DC-DC converter applications.","working_principle":"The STS5PF30L uses STMicroelectronics' STripFET trench MOSFET technology where vertical trench gates are formed in the silicon to create a high-density cell structure. This geometry maximizes the channel width per unit area, reducing specific on-resistance compared to planar MOSFET structures. As a P-channel device, current flows from source to drain when the gate voltage is pulled below the source voltage, creating an inversion layer in the P-type body region. The logic-level threshold (-1V to -2.5V) ensures full enhancement at VGS=-4.5V, enabling direct drive from 3.3V logic. The intrinsic body diode between drain and source provides a current path during inductive load switching, with reverse recovery characteristics specified in the datasheet.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Source<\/td><td>Source terminal (connected to V+ in high-side switch)<\/td><\/tr><tr><td>2<\/td><td>Source<\/td><td>Source terminal<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Source terminal<\/td><\/tr><tr><td>4<\/td><td>Gate<\/td><td>Gate terminal (logic-level drive)<\/td><\/tr><tr><td>5<\/td><td>Drain<\/td><td>Drain terminal (connected to load)<\/td><\/tr><tr><td>6<\/td><td>Drain<\/td><td>Drain terminal<\/td><\/tr><tr><td>7<\/td><td>Drain<\/td><td>Drain terminal<\/td><\/tr><tr><td>8<\/td><td>Drain<\/td><td>Drain terminal<\/td><\/tr><\/table>","application_scenarios":"The STS5PF30L is commonly used as a high-side power switch in battery management systems where the P-channel configuration eliminates the need for a charge pump for gate drive. In portable devices, it provides load switching with very low voltage drop due to its 55 m\u03a9 on-resistance, preserving battery life. For power routing applications, it selects between two power sources (e.g., battery vs. USB) with minimal power loss. In DC-DC converters, it serves as the synchronous rectifier switch on the high side. The SO-8 package enables easy PCB layout with standard soldering processes.","alternative_models":"<table><tr><th>Model<\/th><th>Manufacturer<\/th><th>Key Difference<\/th><\/tr><tr><td>SI4935DY<\/td><td>Vishay<\/td><td>-30V, -5A, 38m\u03a9, SO-8<\/td><\/tr><tr><td>FDS4953<\/td><td>onsemi<\/td><td>-30V, -6.2A, 30m\u03a9, SO-8 dual<\/td><\/tr><tr><td>IRF9310TRPBF<\/td><td>Infineon<\/td><td>-20V, -6A, 22m\u03a9, SO-8<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6503","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6503"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6503\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6503"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6503"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6503"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6503"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}