{"id":6436,"date":"2026-06-16T03:43:29","date_gmt":"2026-06-16T03:43:29","guid":{"rendered":"https:\/\/materialparts.com\/fm24cl04b-gtr\/"},"modified":"2026-06-16T03:43:29","modified_gmt":"2026-06-16T03:43:29","slug":"fm24cl04b-gtr","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/fm24cl04b-gtr\/","title":{"rendered":"FM24CL04B-GTR"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The FM24CL04B-GTR is a 4-Kbit (512 x 8) nonvolatile F-RAM memory from Infineon (formerly Cypress\/Ramtron), featuring an I2C interface up to 1MHz. Unlike EEPROM, it performs writes at bus speed with no delay, supports 100 trillion (10^14) read\/write cycles, and retains data for 151 years at 65\u00b0C. The device operates from 2.7V to 3.65V with only 100\u00b5A active current and 3\u00b5A standby, making it a drop-in replacement for I2C EEPROMs in demanding applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0643\u062b\u0627\u0641\u0629<\/td>\n4 Kbit (512 x 8)<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nI2C (up to 1MHz)<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n2.7V to 3.65V<\/td>\n<\/tr>\n
Active Current<\/td>\n100\u00b5A @ 100kHz<\/td>\n<\/tr>\n
\u0627\u0644\u062a\u064a\u0627\u0631 \u0627\u0644\u0627\u062d\u062a\u064a\u0627\u0637\u064a<\/td>\n3\u00b5A (typical)<\/td>\n<\/tr>\n
Write Endurance<\/td>\n10^14 read\/writes (100 trillion)<\/td>\n<\/tr>\n
\u0627\u0644\u0627\u062d\u062a\u0641\u0627\u0638 \u0628\u0627\u0644\u0628\u064a\u0627\u0646\u0627\u062a<\/td>\n151 years @ 65\u00b0C<\/td>\n<\/tr>\n
Write Speed<\/td>\nNoDelay\u2122 \u2014 instant at bus speed<\/td>\n<\/tr>\n
Access Time<\/td>\n550ns (max)<\/td>\n<\/tr>\n
Write Protect<\/td>\nYes (WP pin)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOIC-8 (4.97 x 3.98 x 1.47mm)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-40 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +85 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0624\u0647\u0644\u0627\u062a<\/td>\nAEC-Q100<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • 100 trillion read\/write cycles \u2014 100 million times more than EEPROM<\/li>\n
  • 151-year data retention at 65\u00b0C<\/li>\n
  • NoDelay\u2122 instant writes at bus speed \u2014 no polling required<\/li>\n
  • Drop-in hardware replacement for I2C EEPROM<\/li>\n
  • Supports 100kHz, 400kHz, and 1MHz I2C modes<\/li>\n
  • Ultra-low power: 100\u00b5A active, 3\u00b5A standby<\/li>\n
  • Schmitt trigger inputs for noise immunity<\/li>\n
  • Write protect pin for data security<\/li>\n
  • \u0645\u0624\u0647\u0644 AEC-Q100 \u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a \u0627\u0644\u0633\u064a\u0627\u0631\u0627\u062a<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • EV charging stations and battery management<\/li>\n
    • Industrial data logging and control systems<\/li>\n
    • Automotive ECUs and telematics<\/li>\n
    • Smart meters and utility metering<\/li>\n
    • Medical device configuration storage<\/li>\n
    • Write-intensive applications where EEPROM wears out<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FM24CL04B-GTR is a 4-Kbit (512 x 8) nonvolatile F-RAM memory from Infineon (formerly Cypress\/Ramtron), featuring an I2C interface up to 1MHz. Unlike EEPROM, it performs writes at bus speed with no delay, supports 100 trillion (10^14) read\/write cycles, and retains data for 151 years at 65\u00b0C. The device operates from 2.7V to […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[173],"class_list":["post-6436","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-infineon"],"acf":{"brief_explanation":"4Kbit I2C F-RAM, 10^14 endurance, 151yr retention, NoDelay writes, SOIC-8, AEC-Q100","date_code":"","package_case":"SOIC-8 (4.97 x 3.98 x 1.47mm)","in_stock":5680,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-FM24CL04B_4-Kbit_(512_8)_Serial_(I2C)_F-RAM-DataSheet-v13_00-EN.pdf","price":"$2.06 @ 1ku","product_introduction":"The FM24CL04B-GTR is a 4-Kbit nonvolatile ferroelectric RAM (F-RAM) from Infineon, organized as 512 x 8 bits with an I2C serial interface. Unlike conventional EEPROM, F-RAM writes are instantaneous at bus speed \u2014 there is no write delay and no need for acknowledge polling. The device supports an extraordinary 100 trillion (10^14) read\/write cycles, which is 100 million times more than typical EEPROM, making it ideal for applications requiring frequent writes. Data retention is guaranteed for 151 years at 65\u00b0C. Operating from 2.7V to 3.65V, the FM24CL04B consumes only 100\u00b5A active current and 3\u00b5A in standby. It is a pin-compatible, drop-in replacement for standard I2C EEPROMs, supporting 100kHz, 400kHz, and 1MHz bus speeds. The AEC-Q100 qualification ensures reliability in automotive environments.","working_principle":"The FM24CL04B uses ferroelectric RAM technology where data is stored by polarizing ferroelectric crystals within each memory cell. Unlike EEPROM which requires a high-voltage charge pump and milliseconds-long erase\/write cycles, F-RAM writes are completed in nanoseconds \u2014 the data is latched during the I2C acknowledge cycle and stored before the next clock edge. This NoDelay\u2122 write capability eliminates the need for write-cycle polling. The I2C interface supports standard (100kHz), fast (400kHz), and high-speed (1MHz) modes. The write protect (WP) pin, when asserted high, disables all write operations to the entire memory array. The 9-bit address space (8-bit word address + 1-bit page select in slave address) uniquely addresses each of the 512 byte locations.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1<\/td>A0<\/td>Address bit A0 (for slave address selection)<\/td><\/tr>
      2<\/td>A1<\/td>Address bit A1 (for slave address selection)<\/td><\/tr>
      3<\/td>VSS<\/td>Ground<\/td><\/tr>
      4<\/td>SDA<\/td>I2C serial data (open-drain, bidirectional)<\/td><\/tr>
      5<\/td>SCL<\/td>I2C serial clock input<\/td><\/tr>
      6<\/td>WP<\/td>Write protect (active high disables writes)<\/td><\/tr>
      7<\/td>NC<\/td>No connect<\/td><\/tr>
      8<\/td>VDD<\/td>Power supply (2.7V to 3.65V)<\/td><\/tr><\/table>","application_scenarios":"
      • Automotive Data Logging:<\/b> Use the FM24CL04B to store fault codes, mileage counters, or calibration data that must survive power loss. The 10^14 write endurance handles continuous updates that would wear out EEPROM in months. AEC-Q100 qualification ensures reliability across the automotive temperature range.<\/li>
      • Industrial Metering:<\/b> Store running totals, tariff tables, and calibration parameters in smart meters. The NoDelay\u2122 writes ensure data is captured even during unexpected power interruptions \u2014 the write completes before the bus transaction ends, so no data is lost during a power glitch.<\/li>
      • EV Battery Management:<\/b> Log charge\/discharge cycle counts, state-of-health data, and cell balancing parameters. The high endurance handles per-cycle writes over the vehicle's lifetime. The 151-year data retention ensures critical battery data survives long parking periods.<\/li><\/ul>","alternative_models":"
        Model<\/th>Density<\/th>Interface<\/th>Endurance<\/th>Key Difference<\/th><\/tr>
        FM24CL16B-GTR<\/td>16Kbit<\/td>I2C 1MHz<\/td>10^14<\/td>Higher density, same family<\/td><\/tr>
        FM24C04B-GTR<\/td>4Kbit<\/td>I2C 1MHz<\/td>10^12<\/td>5V version, lower endurance<\/td><\/tr>
        MB85RC04V<\/td>4Kbit<\/td>I2C 400kHz<\/td>10^12<\/td>Fujitsu F-RAM alternative<\/td><\/tr>
        24LC04B-I\/SN<\/td>4Kbit<\/td>I2C 400kHz<\/td>10^6<\/td>EEPROM, lower endurance and speed<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6436","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6436"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6436\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6436"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6436"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6436"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6436"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}