{"id":6277,"date":"2026-06-12T11:05:58","date_gmt":"2026-06-12T11:05:58","guid":{"rendered":"https:\/\/materialparts.com\/cy62138fv30ll-45sxi\/"},"modified":"2026-06-12T11:05:58","modified_gmt":"2026-06-12T11:05:58","slug":"cy62138fv30ll-45sxi","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/cy62138fv30ll-45sxi\/","title":{"rendered":"CY62138FV30LL-45SXI"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The CY62138FV30LL-45SXI from Infineon (Cypress) is a 2Mbit (256K x 8) MoBL low-power asynchronous CMOS SRAM with 45ns access time. Operating from 2.2V to 3.6V, it features very low standby current in a 32-pin SOIC package.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0627\u0644\u0643\u062b\u0627\u0641\u0629<\/td>\n2 Mbit (256K x 8)<\/td>\n<\/tr>\n
Organization<\/td>\n262,144 words x 8 bits<\/td>\n<\/tr>\n
Access Time<\/td>\n45 ns (max)<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n2.2V to 3.6V<\/td>\n<\/tr>\n
Active Current<\/td>\n18 mA (typical)<\/td>\n<\/tr>\n
\u0627\u0644\u062a\u064a\u0627\u0631 \u0627\u0644\u0627\u062d\u062a\u064a\u0627\u0637\u064a<\/td>\n3 uA (typical)<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nParallel asynchronous<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-40 to 85 C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n32-pin SOIC (450mil)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • MoBL (More Bytes Less Power) low-power technology<\/li>\n
  • Ultra-low 3uA standby current for battery backup<\/li>\n
  • 45ns fast access time<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Industrial data buffering and caching<\/li>\n
    • Networking packet buffer memory<\/li>\n
    • Embedded system scratchpad RAM<\/li>\n
    • Battery-backed data storage<\/li>\n
    • Medical device data logging<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The CY62138FV30LL-45SXI from Infineon (Cypress) is a 2Mbit (256K x 8) MoBL low-power asynchronous CMOS SRAM with 45ns access time. Operating from 2.2V to 3.6V, it features very low standby current in a 32-pin SOIC package. Key Specifications Density 2 Mbit (256K x 8) Organization 262,144 words x 8 bits Access Time 45 […]<\/p>\n","protected":false},"author":2,"featured_media":6380,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,20],"tags":[],"chip_brand":[173],"class_list":["post-6277","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-integrated-circuits-ics","category-interface-ics","chip_brand-infineon"],"acf":{"brief_explanation":"2Mbit (256Kx8) low-power SRAM, 45ns, 2.2-3.6V, 3uA standby, 32-SOIC","date_code":"","package_case":"32-SOIC 450mil (11.3 x 8.7 x 2.35mm)","in_stock":7746,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-CY62138F_MoBL_2-Mbit_(256K_x_8)_Static_RAM-DataSheet-v06_00-EN.pdf","price":"$2.80 @ 1ku","product_introduction":"The CY62138FV30LL-45SXI from Infineon (Cypress) is a 2Mbit asynchronous SRAM organized as 256K words by 8 bits, designed using Cypress's MoBL (More Bytes Less Power) technology. With 45ns maximum access time and operating voltage from 2.2V to 3.6V, it provides fast data access with very low power consumption. The ultra-low standby current of 3uA makes it ideal for battery-backed applications. The device uses a standard parallel interface with separate chip enable (CE1, CE2), output enable (OE), and write enable (WE) control signals.","working_principle":"The CY62138FV30LL-45SXI operates as an asynchronous static RAM using six-transistor CMOS memory cells. **Memory Cell**: Each bit is stored in a cross-coupled CMOS inverter pair (6T cell) that maintains its state without refresh, unlike DRAM. The static cell provides fast 45ns access but consumes more area per bit than DRAM. **Read Operation**: The address is presented on A0-A17. CE1=LOW and CE2=HIGH select the device. OE=LOW enables the output buffers, driving the stored data onto I\/O0-I\/O7. The entire read cycle completes in 45ns maximum. **Write Operation**: With CE1=LOW, CE2=HIGH, and WE=LOW, data on I\/O0-I\/O7 is written to the addressed location. The write pulse width must meet the minimum specification. OE should be HIGH during writes to prevent bus contention. **Low Power Mode**: When CE1=HIGH or CE2=LOW, the device enters deselect\/standby mode, reducing current to 3uA. This deep power-down makes the device suitable for battery-backed data retention where power must be minimized during inactive periods. **MoBL Technology**: The 90nm process technology and optimized circuit design minimize both active and standby power consumption without sacrificing performance.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1-9, 22-24<\/td>A0-A17<\/td>18-bit address inputs<\/td><\/tr>
      10<\/td>CE1<\/td>Chip enable 1 (active low)<\/td><\/tr>
      11<\/td>CE2<\/td>Chip enable 2 (active high)<\/td><\/tr>
      12<\/td>WE<\/td>Write enable (active low)<\/td><\/tr>
      13-20<\/td>I\/O0-I\/O7<\/td>Data bus (bidirectional)<\/td><\/tr>
      21<\/td>VSS<\/td>Ground<\/td><\/tr>
      25<\/td>OE<\/td>Output enable (active low)<\/td><\/tr>
      32<\/td>VDD<\/td>Power supply (2.2-3.6V)<\/td><\/tr><\/table>","application_scenarios":"
      • Industrial Buffering: Temporary data storage for industrial PLC communication buffers<\/li>
      • Networking: Packet buffer memory for Ethernet switches and routers<\/li>
      • Battery Backup: Data retention memory in UPS and battery-backed systems with 3uA standby<\/li>
      • Embedded Scratchpad: Fast local RAM for DSP and MCU data processing buffers<\/li>
      • Medical Logging: Patient data buffer in medical monitoring devices<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>Key Difference<\/th><\/tr>
        CY62138FV30LL-45ZSXI<\/td>Infineon<\/td>44-pin TSOP II package version<\/td><\/tr>
        CY62137FV30LL-45SXI<\/td>Infineon<\/td>1Mbit (128Kx8), same family<\/td><\/tr>
        IS62WV2568BLL-45TLI<\/td>ISSI<\/td>2Mbit SRAM, 2.4-3.6V, TSOP-32<\/td><\/tr>
        AS6C8016-55SIN<\/td>Alliance Memory<\/td>8Mbit (512Kx16), 55ns, SOIC-44<\/td><\/tr>
        HM62W8516BTTI-5L<\/td>Renesas<\/td>8Mbit, 1.8V, low power, TSOP-48<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6277","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6277"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6277\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media\/6380"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6277"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6277"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6277"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6277"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}