{"id":6236,"date":"2026-06-12T09:42:07","date_gmt":"2026-06-12T09:42:07","guid":{"rendered":"https:\/\/materialparts.com\/fdn306p\/"},"modified":"2026-06-12T09:42:07","modified_gmt":"2026-06-12T09:42:07","slug":"fdn306p","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/fdn306p\/","title":{"rendered":"FDN306P"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The FDN306P from onsemi is a P-channel enhancement mode MOSFET in a SOT-23 surface mount package. It features a drain-source voltage of -60V, a continuous drain current of -1.4A, and a very low on-resistance of 200m\u03a9 (max) at VGS = -10V, making it ideal for load switching and battery protection in portable electronics.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
\u0646\u0648\u0639 \u0627\u0644\u0642\u0646\u0627\u0629<\/td>\nP-Channel Enhancement Mode<\/td>\n<\/tr>\n
Drain-Source Voltage (VDSS)<\/td>\n-60V<\/td>\n<\/tr>\n
Continuous Drain Current (ID)<\/td>\n-1.4A (at TC=25\u00b0C)<\/td>\n<\/tr>\n
On-Resistance (RDS(ON))<\/td>\n200m\u03a9 max @ VGS=-10V<\/td>\n<\/tr>\n
Gate Threshold Voltage (VGS(th))<\/td>\n-1V to -2.5V<\/td>\n<\/tr>\n
Gate Charge (Qg)<\/td>\n8nC (typical)<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n1.0W (at TA=25\u00b0C)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-23 (3-pin)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Low RDS(ON) of 200m\u03a9 for efficient switching<\/li>\n
  • Compact SOT-23 surface mount package<\/li>\n
  • 60V drain-source voltage rating for battery and load applications<\/li>\n
  • \u0634\u062d\u0646\u0629 \u0628\u0648\u0627\u0628\u0629 \u0645\u0646\u062e\u0641\u0636\u0629 \u0644\u0644\u062a\u0628\u062f\u064a\u0644 \u0627\u0644\u0633\u0631\u064a\u0639<\/li>\n
  • Pb-free and RoHS compliant<\/li>\n
  • Suitable for logic-level gate drive<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Battery charging\/discharging switches<\/li>\n
    • Load switching in portable devices<\/li>\n
    • Power management in notebooks and tablets<\/li>\n
    • Battery reverse polarity protection<\/li>\n
    • DC-DC converter synchronous rectification<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The FDN306P from onsemi is a P-channel enhancement mode MOSFET in a SOT-23 surface mount package. It features a drain-source voltage of -60V, a continuous drain current of -1.4A, and a very low on-resistance of 200m\u03a9 (max) at VGS = -10V, making it ideal for load switching and battery protection in portable electronics. […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-6236","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"P-channel MOSFET, -60V, -1.4A, 200m\u03a9 RDS(ON), SOT-23 package for load switching and battery protection","date_code":"","package_case":"SOT-23 (3-pin)","in_stock":14348,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/fdn306p-d.pdf","price":"$0.12 @ 1ku","product_introduction":"The FDN306P is a P-channel enhancement mode power MOSFET from onsemi, designed for low voltage load switching and battery management applications. The device utilizes onsemi's high cell density DMOS technology to achieve a low on-resistance of 200m\u03a9 maximum at VGS=-10V while maintaining fast switching speeds through low gate charge. The -60V drain-source voltage rating provides adequate margin for battery-powered systems where voltage spikes from inductive loads may occur. The compact SOT-23 package makes the FDN306P particularly suitable for space-constrained portable electronics such as smartphones, tablets, and wearable devices where efficient power management is critical.","working_principle":"The FDN306P is a P-channel enhancement mode MOSFET where current flows from source to drain when the gate voltage is pulled below the source voltage by more than the threshold voltage. The device uses a vertical DMOS structure where the gate electrode controls the formation of a conductive channel between the P+ source and the P-epi drain region. When VGS exceeds the threshold (becomes more negative than -1V to -2.5V), an inversion layer forms under the gate oxide, creating a low-resistance path for hole current flow. The low RDS(ON) minimizes conduction losses during the on-state, while the low gate charge ensures fast transition between on and off states, reducing switching losses in high-frequency applications.","pin_description":"
      Pin<\/th>Name<\/th>Description<\/th><\/tr>
      1<\/td>G<\/td>Gate; controls the MOSFET on\/off state<\/td><\/tr>
      2<\/td>S<\/td>Source; connected to the positive supply in high-side switch applications<\/td><\/tr>
      3<\/td>D<\/td>Drain; connected to the load in high-side switch configurations<\/td><\/tr><\/table>","application_scenarios":"
      • Battery Protection<\/b>: Serves as high-side disconnect switch to prevent over-discharge or reverse current in Li-ion battery packs<\/li>
      • Load Switch<\/b>: Controls power delivery to subsystems in portable devices, enabling power sequencing and sleep mode operation<\/li>
      • Reverse Polarity Protection<\/b>: Placed between battery and system to block current flow if battery is inserted backwards<\/li>
      • DC-DC Converter<\/b>: Used as synchronous rectifier or high-side switch in buck and boost converter topologies<\/li><\/ul>","alternative_models":"
        Model<\/th>Manufacturer<\/th>VDSS<\/th>RDS(ON)<\/th>Package<\/th><\/tr>
        FDC6420P<\/td>onsemi<\/td>-60V<\/td>180m\u03a9<\/td>SOIC-8<\/td><\/tr>
        IRF9Z34NPBF<\/td>Infineon<\/td>-60V<\/td>100m\u03a9<\/td>DPAK<\/td><\/tr>
        SI2307DS<\/td>Vishay<\/td>-30V<\/td>80m\u03a9<\/td>SOT-23<\/td><\/tr>
        FDN304P<\/td>onsemi<\/td>-60V<\/td>300m\u03a9<\/td>SOT-23<\/td><\/tr>
        NTR4101PT1G<\/td>onsemi<\/td>-60V<\/td>150m\u03a9<\/td>SOT-23<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6236","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=6236"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/6236\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=6236"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=6236"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=6236"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=6236"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}