The IRFB3077PBF is an N-channel power MOSFET from Infineon in TO-220 through-hole package, rated at 75V VDSS and 210A ID with only 2.8mOhm typical RDS(on). Designed for ultra-high-current switching applications, it uses advanced HEXFET technology to achieve industry-leading on-resistance in the 75V class, making it ideal for electric vehicle controllers, high-power DC-DC converters, and welder output stages.<\/p>\n
| VDSS (Drain-Source Voltage)<\/td>\n | 75V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n | 210A @ TC=25\u00b0C (package limited to 75A)<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| RDS(on) (On-Resistance)<\/td>\n | 2.8mOhm typ, 3.3mOhm max @ VGS=10V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| Qg (\u0625\u062c\u0645\u0627\u0644\u064a \u0634\u062d\u0646\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n | 210nC typical<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| VGS(th) (\u0639\u062a\u0628\u0629 \u0627\u0644\u0628\u0648\u0627\u0628\u0629)<\/td>\n | 2.0-4.0V<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n | 370W @ TC=25\u00b0C<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| \u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n | TO-220AB<\/td>\n<\/tr>\n | ||||||||||||||||||||||||||||||||||||||||
| Temperature<\/td>\n | -55\u00b0C to +175\u00b0C<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The IRFB3077PBF is an N-channel power MOSFET from Infineon in TO-220 through-hole package, rated at 75V VDSS and 210A ID with only 2.8mOhm typical RDS(on). Designed for ultra-high-current switching applications, it uses advanced HEXFET technology to achieve industry-leading on-resistance in the 75V class, making it ideal for electric vehicle controllers, high-power DC-DC converters, […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[173],"class_list":["post-6225","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-infineon"],"acf":{"brief_explanation":"N-ch 75V 210A 2.8mOhm power MOSFET, TO-220, ultra-low RDS(on) for high-current switching","date_code":"","package_case":"TO-220AB (15.6 x 10.4 x 4.6mm)","in_stock":3500,"datasheet":"https:\/\/www.infineon.com\/dgdl\/irfb3077pbf.pdf?fileId=5546d462533600a40153562c65201ea2","price":"$4.20 @ 1ku","product_introduction":"The IRFB3077PBF is an N-channel power MOSFET from Infineon in TO-220, rated at 75V VDSS and 210A ID (silicon limited; package limit is 75A) with 2.8mOhm typical RDS(on) at VGS=10V. The 75V rating covers 48V battery systems (including electric bicycles, scooters, and mild-hybrids) with adequate margin for voltage spikes. The ultra-low 2.8mOhm RDS(on) produces only 1.4W conduction loss at 22A, or 14W at 70A, dramatically reducing heatsink requirements compared to older MOSFETs. The device uses Infineon's advanced HEXFET technology with optimized cell density and stripe layout for low RDS(on) and low gate charge (210nC). The TO-220 package provides 0.4\u00b0C\/W junction-to-case thermal resistance when properly mounted on a heatsink, enabling 370W theoretical dissipation. The body diode has VSD=1.3V at 100A with trr=80ns. The -PBF suffix specifies lead-free TO-220. The IRFB3077 is a popular choice for high-current, low-voltage switching where through-hole mounting and heatsink attachment are preferred.","working_principle":"The IRFB3077PBF operates as a voltage-controlled N-channel enhancement-mode MOSFET. When VGS exceeds the threshold (2.0-4.0V), the gate oxide field induces an N-type inversion layer in the P-type body region, creating a conductive channel between source and drain. The ultra-low 2.8mOhm RDS(on) is achieved by: (1) Maximum cell density - millions of parallel cell structures on the die; (2) Optimized stripe geometry that minimizes JFET region resistance; (3) Large die area (approximately 60mm\u00b2) that reduces resistance proportionally. The gate charge of 210nC represents the total charge needed to switch the device: Qgs (gate-source charge) enhances the channel, Qgd (Miller charge) discharges the drain-gate capacitance during the voltage transition, and Qg(total) includes the plateau charge. At 2A gate drive, the switching time is approximately 105ns, producing 10-30W switching losses at 100kHz depending on load current. The body diode (inherent PN junction) has a forward drop of 1.3V and reverse recovery time of 80ns. In half-bridge configurations, the body diode conducts during dead-time; the 80ns trr is acceptable for frequencies up to 50kHz. For higher frequencies, external Schottky anti-parallel diodes bypass the body diode. The 75V VDSS provides 56% margin over a 48V battery (full charge ~54.6V), accommodating load-dump transients with proper TVS clamping.","pin_description":"
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