The NCP45524IMNTWG-H from onsemi is a 5.5A smart high-side power switch with 16mOhm on-resistance and integrated protection features in a compact DFN-10 package for USB and hot-swap applications.<\/p>\n
| \u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n | DFN-10 (3x3mm)<\/td>\n<\/tr>\n<\/table>\n\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\nProduct Overview The NCP45524IMNTWG-H from onsemi is a 5.5A smart high-side power switch with 16mOhm on-resistance and integrated protection features in a compact DFN-10 package for USB and hot-swap applications. Key Specifications Package DFN-10 (3x3mm) Features See datasheet for complete specifications Industry-standard package Applications Industrial control Consumer electronics Communication equipment Automotive electronics<\/p>","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[36,13],"tags":[],"chip_brand":[144],"class_list":["post-5550","post","type-post","status-publish","format-standard","hentry","category-gate-driver-ics","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"Smart high-side power switch, 5.5A, 16mOhm, 5.5V, DFN-10","date_code":"","package_case":"DFN-10 (3x3mm)","in_stock":11674,"datasheet":"https:\/\/www.onsemi.com\/pub\/Collateral\/NCP45524-D.PDF","price":"$1.10 @ 1ku","product_introduction":"The NCP45524IMNTWG-H from onsemi is a 5.5A smart high-side power switch with 16mOhm on-resistance and integrated protection features in a compact DFN-10 package for USB and hot-swap applications.","working_principle":"The NCP45524IMNTWG-H is a smart high-side power switch from onsemi in DFN-10 (3x3mm), integrating a 16mOhm N-channel MOSFET with comprehensive protection features. The switch controls power delivery from VIN to VOUT through the internal MOSFET, with ON pin controlling the gate. When ON is HIGH, the internal charge pump generates a gate voltage above VIN to fully enhance the N-channel MOSFET, achieving 16mOhm RDS(on). The charge pump operates at 1MHz, requiring a 0.1uF external boost capacitor. The switch provides three key protections: (1) Overcurrent limit: the current is monitored via a sense MOSFET; when the load current exceeds 5.5A (typical), the MOSFET gate is regulated to limit current to a safe level; (2) Thermal shutdown: if junction temperature exceeds 150C, the switch turns off and asserts FLAG; (3) Undervoltage lockout (UVLO): if VIN drops below 2V, the switch turns off. The FLAG pin is an open-drain output that pulls LOW during any fault condition (overcurrent, overtemperature, or UVLO), allowing a host MCU to detect and respond to faults. The -H suffix specifies the current limit level (5.5A). The slew rate control on the output prevents excessive inrush current into capacitive loads, limiting dV\/dt to approximately 2V\/ms. The reverse current blocking prevents current flowing from VOUT to VIN when the switch is off. The DFN-10 package provides 40C\/W thermal resistance with exposed pad. Applications include USB power switching, hot-plug power control, and load power gating.","pin_description":"
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