{"id":3727,"date":"2026-06-08T02:28:54","date_gmt":"2026-06-08T02:28:54","guid":{"rendered":"https:\/\/materialparts.com\/irf9630pbf\/"},"modified":"2026-06-08T02:28:54","modified_gmt":"2026-06-08T02:28:54","slug":"irf9630pbf","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irf9630pbf\/","title":{"rendered":"IRF9630PBF"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IRF9630PBF from Vishay Siliconix is a 200V P-channel power MOSFET with 0.8 ohm RDS(on), 6.5A drain current, and 74W power dissipation in a through-hole TO-220AB package. Third generation power MOSFET technology.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n-200V<\/td>\n<\/tr>\n
VGS<\/td>\n+\/-20V<\/td>\n<\/tr>\n
RDS(on) at VGS=-10V<\/td>\n0.8 ohm (max)<\/td>\n<\/tr>\n
ID (continuous at TC=25C)<\/td>\n-6.5A<\/td>\n<\/tr>\n
IDM (pulsed)<\/td>\n-26A<\/td>\n<\/tr>\n
VGS(th)<\/td>\n-2.0 to -4.0V<\/td>\n<\/tr>\n
QG (total)<\/td>\n29nC (max)<\/td>\n<\/tr>\n
EAS (avalanche)<\/td>\n500mJ<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n74W at TC=25C<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to 150 C<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • P-channel MOSFET for high-side switching<\/li>\n
  • Dynamic dv\/dt rating<\/li>\n
  • Repetitive avalanche rated (7.4mJ)<\/li>\n
  • Fast switching speed<\/li>\n
  • Simple drive requirements<\/li>\n
  • Ease of paralleling<\/li>\n
  • RoHS compliant lead-free termination<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • High-side load switches<\/li>\n
    • DC motor H-bridge P-channel leg<\/li>\n
    • Power supply reverse polarity protection<\/li>\n
    • \u0645\u0631\u062d\u0644\u0629 \u0625\u062e\u0631\u0627\u062c \u0645\u0636\u062e\u0645 \u0627\u0644\u0635\u0648\u062a<\/li>\n
    • Battery disconnect switches<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The IRF9630PBF from Vishay Siliconix is a 200V P-channel power MOSFET with 0.8 ohm RDS(on), 6.5A drain current, and 74W power dissipation in a through-hole TO-220AB package. Third generation power MOSFET technology. Key Specifications VDS -200V VGS +\/-20V RDS(on) at VGS=-10V 0.8 ohm (max) ID (continuous at TC=25C) -6.5A IDM (pulsed) -26A VGS(th) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[136],"class_list":["post-3727","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-vishay"],"acf":{"brief_explanation":"200V P-ch MOSFET, 0.8 ohm, 6.5A, 74W, TO-220AB, avalanche rated","date_code":"","package_case":"TO-220AB (10.27 x 4.45 x 9.01 mm)","in_stock":2740,"datasheet":"https:\/\/www.vishay.com\/docs\/91084\/sihf9630.pdf","price":"$1.08 @ 5ku","product_introduction":"The IRF9630PBF from Vishay Siliconix is a third-generation P-channel power MOSFET in a TO-220AB through-hole package. With a drain-source voltage rating of -200V, RDS(on) of 0.8 ohm maximum at VGS=-10V, and continuous drain current of -6.5A, it provides the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness for P-channel switching applications. The device features dynamic dv\/dt rating, repetitive avalanche capability (7.4mJ), and single-pulse avalanche energy of 500mJ, making it robust in inductive switching environments. The P-channel configuration enables simple high-side switching without the need for bootstrap or charge-pump gate drive circuits. The TO-220AB package is universally preferred for commercial-industrial applications at power dissipation levels up to approximately 50W, with low thermal resistance (RthJC = 1.7 C\/W) and low package cost.","working_principle":"The IRF9630PBF operates as a P-channel enhancement-mode power MOSFET. Key subsystems include: (1) Vertical DMOS Structure - a double-diffused MOS structure creates the P-channel with charge carrier flow from source to drain when VGS is driven negative relative to the source; (2) Gate Oxide - controls the channel formation; when VGS exceeds the threshold (-2.0 to -4.0V), an inversion layer forms connecting source and drain; (3) Body Diode - an intrinsic P-N junction from source to drain provides reverse conduction path; the body diode has a forward voltage drop and reverse recovery characteristics; (4) Avalanche Capability - the device is designed to absorb energy during avalanche breakdown, with 500mJ single-pulse and 7.4mJ repetitive avalanche ratings; (5) TO-220AB Package - provides low thermal resistance (RthJC = 1.7 C\/W) for efficient heat extraction through the mounting tab.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Gate<\/td>Input<\/td>Gate drive input<\/td><\/tr>
      2<\/td>Drain<\/td>Power<\/td>Drain terminal (connected to tab)<\/td><\/tr>
      3<\/td>Source<\/td>Power<\/td>Source terminal<\/td><\/tr>
      Tab<\/td>Drain<\/td>Power<\/td>Drain terminal (heatsink mounting)<\/td><\/tr><\/table>","application_scenarios":"
      • High-side load switches: P-channel enables simple ground-referenced gate drive for positive rail switching<\/li>
      • DC motor H-bridge: P-channel upper leg with N-channel lower leg for bidirectional motor control<\/li>
      • Reverse polarity protection: series P-channel blocks negative voltage from reaching the load<\/li>
      • Audio amplifier output: Class AB push-pull output stage with complementary N\/P MOSFETs<\/li>
      • Battery disconnect: high-side switch for battery management in UPS and EV systems<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Vishay<\/td>IRF9640PBF<\/td>TO-220AB<\/td>200V, 11A, lower RDS(on)<\/td><\/tr>
        Infineon<\/td>IRF9630PBF<\/td>TO-220AB<\/td>Original IR part, same spec<\/td><\/tr>
        ST<\/td>IRF9630<\/td>TO-220AB<\/td>Second source<\/td><\/tr>
        Vishay<\/td>IRF9540PBF<\/td>TO-220AB<\/td>100V, 19A, lower voltage<\/td><\/tr>
        onsemi<\/td>FQPF4N60C<\/td>TO-220F<\/td>600V N-ch, different topology<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3727","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=3727"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3727\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=3727"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=3727"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=3727"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=3727"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}