{"id":3620,"date":"2026-06-06T12:01:40","date_gmt":"2026-06-06T12:01:40","guid":{"rendered":"https:\/\/materialparts.com\/fda59n30\/"},"modified":"2026-06-06T12:01:40","modified_gmt":"2026-06-06T12:01:40","slug":"fda59n30","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/fda59n30\/","title":{"rendered":"FDA59N30"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The FDA59N30 from onsemi is a n-channel unifet mosfet, 300v, 59a, 56m\u03c9, frfet enhanced body diode. Packaged in a TO-3P-3L (TO-3PN) format, this device delivers reliable performance for demanding electronic applications. Its optimized design ensures excellent electrical characteristics while maintaining cost-effectiveness for volume production.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u7c7b\u578b<\/td>\n<td>N-Channel UniFET\u2122<\/td>\n<\/tr>\n<tr>\n<td>\u6f0f\u6e90\u7535\u538bVds<\/td>\n<td>300V<\/td>\n<\/tr>\n<tr>\n<td>\u5bfc\u901a\u7535\u963bRds(on)<\/td>\n<td>56m\u03a9 Max @ Vgs=10V, Id=29.5A<\/td>\n<\/tr>\n<tr>\n<td>\u6301\u7eed\u6f0f\u6781\u7535\u6d41Id<\/td>\n<td>59A @ Tc=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u6805\u6781\u7535\u8377Qg<\/td>\n<td>77nC Typ @ Vgs=10V<\/td>\n<\/tr>\n<tr>\n<td>\u8f93\u5165\u7535\u5bb9Ciss<\/td>\n<td>3590pF Typ<\/td>\n<\/tr>\n<tr>\n<td>\u4f53\u4e8c\u6781\u7ba1trr<\/td>\n<td><100ns (FRFET\u589e\u5f3a)<\/td>\n<\/tr>\n<tr>\n<td>\u529f\u8017Pd<\/td>\n<td>500W @ Tc=25\u00b0C<\/td>\n<\/tr>\n<tr>\n<td>\u5de5\u4f5c\u6e29\u5ea6<\/td>\n<td>-55\u00b0C ~ +150\u00b0C<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<ul>\n<li>Low on-resistance: 56m\u03a9 Max @ Vgs=10V, Id=29.5A<\/li>\n<li>Temperature range: -55\u00b0C ~ +150\u00b0C<\/li>\n<li>RoHS compliant and lead-free<\/li>\n<li>Suitable for automated assembly<\/li>\n<\/ul>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<ul>\n<li>\u529f\u7387\u56e0\u6570\u6821\u6b63(PFC)<\/li>\n<li>\u5e73\u677f\u7535\u89c6\u7535\u6e90<\/li>\n<li>ATX\u7535\u6e90<\/li>\n<li>\u7535\u5b50\u9547\u6d41\u5668<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"<p>Product Overview The FDA59N30 from onsemi is a n-channel unifet mosfet, 300v, 59a, 56m\u03c9, frfet enhanced body diode. Packaged in a TO-3P-3L (TO-3PN) format, this device delivers reliable performance for demanding electronic applications. Its optimized design ensures excellent electrical characteristics while maintaining cost-effectiveness for volume production. Key Specifications \u7c7b\u578b N-Channel UniFET\u2122 \u6f0f\u6e90\u7535\u538bVds 300V \u5bfc\u901a\u7535\u963bRds(on) 56m\u03a9 [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[144],"class_list":["post-3620","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-on"],"acf":{"brief_explanation":"N-Channel UniFET MOSFET, 300V, 59A, 56m\u03a9, FRFET Enhanced Body Diode","date_code":"","package_case":"TO-3P-3L (TO-3PN)","in_stock":14395,"datasheet":"https:\/\/www.onsemi.com\/download\/data-sheet\/pdf\/fda59n30-d.pdf","price":"$2.07 @ 1ku","product_introduction":"The FDA59N30 is a n-channel unifet mosfet, 300v, 59a, 56m\u03c9, frfet enhanced body diode manufactured by onsemi. This device is housed in a TO-3P-3L (TO-3PN) package and operates across a -55\u00b0C ~ +150\u00b0C. The component meets industry standards for reliability and is suitable for demanding applications.","working_principle":"The MOSFET operates as a voltage-controlled switch. When the gate-source voltage exceeds the threshold, the conductive channel forms between drain and source, allowing current flow. The low on-resistance minimizes conduction losses during switching operations. The gate is isolated by an oxide layer, providing extremely high input impedance and negligible gate current.","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>G<\/td><td>Gate<\/td><\/tr><tr><td>2<\/td><td>D<\/td><td>Drain (Tab)<\/td><\/tr><tr><td>3<\/td><td>S<\/td><td>Source<\/td><\/tr><\/table>","application_scenarios":"<ul>\n<li>\u529f\u7387\u56e0\u6570\u6821\u6b63(PFC)<\/li>\n<li>\u5e73\u677f\u7535\u89c6\u7535\u6e90<\/li>\n<li>ATX\u7535\u6e90<\/li>\n<li>\u7535\u5b50\u9547\u6d41\u5668<\/li>\n<\/ul>","alternative_models":"<table><tr><th>Model<\/th><th>Notes<\/th><\/tr><tr><td>FDA59N30C<\/td><td>\u6539\u8fdb\u578b<\/td><\/tr>\n<tr><td>FDPF54N30<\/td><td>\u76f8\u4f3c\u89c4\u683c<\/td><\/tr>\n<\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3620","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=3620"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3620\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=3620"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=3620"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=3620"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=3620"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}