{"id":3398,"date":"2026-06-04T04:22:01","date_gmt":"2026-06-04T04:22:01","guid":{"rendered":"https:\/\/materialparts.com\/ao4407a\/"},"modified":"2026-06-06T03:19:57","modified_gmt":"2026-06-06T03:19:57","slug":"ao4407a","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/ao4407a\/","title":{"rendered":"AO4407A"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The AO4407A from Alpha & Omega Semiconductor is a 30V P-channel enhancement mode MOSFET with 13m\u03a9 max RDS(on) at VGS=-10V in an SOIC-8 package. With -12A continuous drain current and 30nC gate charge, it is optimized for load switch and PWM applications in battery-powered and computing systems.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS<\/td>\n-30V<\/td>\n<\/tr>\n
ID (TA=25\u00b0C)<\/td>\n-12 A<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=-10V<\/td>\n13 m\u03a9<\/td>\n<\/tr>\n
RDS(on) Max @ VGS=-6V<\/td>\n17 m\u03a9<\/td>\n<\/tr>\n
RDS(on) Typ @ VGS=-5V<\/td>\n30 m\u03a9<\/td>\n<\/tr>\n
VGS(th) Max<\/td>\n-3.0V<\/td>\n<\/tr>\n
Qg Total @ VGS=-10V<\/td>\n30 nC typical, 39 nC max<\/td>\n<\/tr>\n
Qgd (Miller Charge)<\/td>\n10 nC typical<\/td>\n<\/tr>\n
Power Dissipation (TA=25\u00b0C)<\/td>\n3.1 W<\/td>\n<\/tr>\n
R\u03b8JA (Steady-State)<\/td>\n54\u00b0C\/W typical, 75\u00b0C\/W max<\/td>\n<\/tr>\n
Body Diode trr<\/td>\n30 ns typical<\/td>\n<\/tr>\n
UIS Tested<\/td>\nYes (100%)<\/td>\n<\/tr>\n
Rg Tested<\/td>\nYes (100%)<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-55 to +150\u00b0C (TJ)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOIC-8 (8-SOIC, 3.9mm body width)<\/td>\n<\/tr>\n<\/table>\n

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    \n
  • 30V P-channel trench MOSFET<\/li>\n
  • Ultra-low RDS(on): 13m\u03a9 max at VGS=-10V<\/li>\n
  • -12A continuous drain current<\/li>\n
  • \u00b125V gate-source voltage rating<\/li>\n
  • 30nC typical gate charge<\/li>\n
  • 100% UIS and Rg tested<\/li>\n
  • Advanced trench technology for low RDS(on) \u00d7 Qg figure of merit<\/li>\n
  • RoHS compliant and Pb-free<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Load switch and power switching<\/li>\n
    • Battery management and protection<\/li>\n
    • DC-DC converter high-side P-MOSFET<\/li>\n
    • Notebook and desktop power management<\/li>\n
    • Motor drive H-bridge (P-side)<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The AO4407A from Alpha & Omega Semiconductor is a 30V P-channel enhancement mode MOSFET with 13m\u03a9 max RDS(on) at VGS=-10V in an SOIC-8 package. With -12A continuous drain current and 30nC gate charge, it is optimized for load switch and PWM applications in battery-powered and computing systems. Key Specifications VDS -30V ID (TA=25\u00b0C) […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[197],"class_list":["post-3398","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-aos"],"acf":{"brief_explanation":"30V P-ch MOSFET, 13mOhm, -12A, 30nC Qg, SOIC-8, load switch","date_code":"","package_case":"SOIC-8 (4.90 x 3.90 x 1.50mm, 1.27mm pitch, 150mil body)","in_stock":12664,"datasheet":"https:\/\/aosmd.com\/res\/data_sheets\/AO4407A.pdf","price":"$0.68 @ 1ku","product_introduction":"The AO4407A from Alpha & Omega Semiconductor is a 30V P-channel trench MOSFET in SOIC-8 with 13m\u03a9 max RDS(on) at VGS=-10V and -12A drain current. 30nC typical gate charge with 10nC Miller charge. \u00b125V gate voltage rating. 100% UIS and Rg tested for reliability. Advanced trench technology optimizes RDS(on) \u00d7 Qg figure of merit. Not For New Designs \u2014 consider AO4407L (green compound) or newer alternatives. Ideal for load switches and battery management in notebook and portable systems.","working_principle":"The AO4407A uses Alpha & Omega's advanced trench MOSFET technology where vertical trenches etched into the silicon create the gate structure, providing high channel density and low on-resistance. As a P-channel device, a negative VGS creates an inversion layer (P-type channel) connecting source to drain. When VGS is more negative than VGS(th) (typically -1.2V, max -3.0V), the device conducts. The low RDS(on) of 13m\u03a9 at VGS=-10V results from optimized trench geometry and cell density. The 30nC gate charge requires moderate gate drive current \u2014 for fast switching, a gate driver capable of sourcing\/sinking 1-2A is recommended. The \u00b125V VGS rating provides margin against gate voltage transients. The body diode has 30ns reverse recovery, making it suitable for low-frequency switching but not optimal for high-frequency synchronous operation.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Source<\/td>Source terminal<\/td><\/tr>
      2<\/td>Gate<\/td>Input<\/td>Gate control terminal<\/td><\/tr>
      3<\/td>Source<\/td>Source<\/td>Source terminal<\/td><\/tr>
      4<\/td>Source<\/td>Source<\/td>Source terminal<\/td><\/tr>
      5-8<\/td>Drain<\/td>Drain<\/td>Drain terminals (connected to tab)<\/td><\/tr><\/table>","application_scenarios":"
      • Notebook 19V main power load switch with 13m\u03a9 conduction loss<\/li>
      • Single-cell Li-Ion battery disconnect switch with -12A capability<\/li>
      • 5V DC-DC buck converter high-side P-MOSFET at 300kHz<\/li>
      • Motor drive H-bridge P-side switch at 24V bus<\/li>
      • USB power delivery load switch with soft-start<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        AOS<\/td>AO4407L<\/td>SOIC-8<\/td>Green compound version, electrically identical<\/td><\/tr>
        AOS<\/td>AO4407<\/td>SOIC-8<\/td>Original version (same electrical specs)<\/td><\/tr>
        Infineon<\/td>BSB014NE2LXI<\/td>SuperSO8<\/td>30V P-ch, 1.4m\u03a9, lower RDS(on)<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3398","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=3398"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3398\/revisions"}],"predecessor-version":[{"id":3475,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3398\/revisions\/3475"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=3398"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=3398"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=3398"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=3398"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}