{"id":3297,"date":"2026-06-01T00:45:09","date_gmt":"2026-06-01T00:45:09","guid":{"rendered":"https:\/\/materialparts.com\/dmn5l06dwk-7\/"},"modified":"2026-06-01T00:45:09","modified_gmt":"2026-06-01T00:45:09","slug":"dmn5l06dwk-7","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/dmn5l06dwk-7\/","title":{"rendered":"DMN5L06DWK-7"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The DMN5L06DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET array housed in a compact SOT-363 (SC-88) surface-mount package. Designed for low-voltage logic-level switching applications, it features a 50V drain-source voltage rating, 305mA continuous drain current per channel, and a low gate threshold voltage of 1V maximum. The device is AEC-Q101 qualified, making it suitable for automotive and industrial applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
VDS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641-\u0627\u0644\u0645\u0635\u0631\u0641)<\/td>\n50V<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n305mA<\/td>\n<\/tr>\n
RDS(on) Max<\/td>\n2 Ohm @ 50mA, 5V<\/td>\n<\/tr>\n
VGS(th) Max<\/td>\n1V @ 250uA<\/td>\n<\/tr>\n
\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n250mW<\/td>\n<\/tr>\n
Input Capacitance (Ciss)<\/td>\n50pF @ 25V<\/td>\n<\/tr>\n
\u0627\u0644\u062a\u0643\u0648\u064a\u0646<\/td>\nDual N-Channel<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-65 to 150\u00b0C<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nSOT-363 (SC-88)<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Logic-level gate drive compatible with 2.5V and 3.3V systems<\/li>\n
  • Low gate threshold voltage (0.49V min, 1V max)<\/li>\n
  • Low input\/output leakage current<\/li>\n
  • Fast switching speed (tr = 1.8ns, tf = 8.4ns typical)<\/li>\n
  • Halogen-free, green device<\/li>\n
  • AEC-Q101 qualified for automotive reliability<\/li>\n
  • UL94V-0 flammability rating<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Load switching in portable devices<\/li>\n
    • Battery management circuits<\/li>\n
    • Automotive power management<\/li>\n
    • Level shifting and signal routing<\/li>\n
    • Motor driver pre-drivers<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The DMN5L06DWK-7 from Diodes Incorporated is a dual N-channel enhancement-mode MOSFET array housed in a compact SOT-363 (SC-88) surface-mount package. Designed for low-voltage logic-level switching applications, it features a 50V drain-source voltage rating, 305mA continuous drain current per channel, and a low gate threshold voltage of 1V maximum. The device is AEC-Q101 qualified, […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[136],"class_list":["post-3297","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-vishay"],"acf":{"brief_explanation":"Dual N-Channel enhancement-mode MOSFET, 50V, 305mA, SOT-363, AEC-Q101 qualified","date_code":"","package_case":"SOT-363 \/ SC-88 (2.15 x 1.3 x 0.95 mm)","in_stock":12476,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/ds3i562.pdf","price":"$0.12 @ 1ku","product_introduction":"The DMN5L06DWK-7 is a dual N-channel enhancement-mode MOSFET array manufactured by Diodes Incorporated using advanced DMOS technology. It is specifically designed for low-voltage, low-current switching applications in space-constrained designs. The dual-channel configuration in a single SOT-363 package reduces component count and board area, making it ideal for portable and handheld devices. With its logic-level gate threshold and low on-resistance, this device can be driven directly from microcontroller GPIO pins without additional driver circuitry. The AEC-Q101 qualification ensures reliable operation in demanding automotive environments.","working_principle":"The DMN5L06DWK-7 operates as a voltage-controlled switch using two independent N-channel MOSFETs in a single package. Each MOSFET channel consists of a gate, drain, and source terminal. When a voltage above the threshold (VGS(th)) is applied between gate and source, an electric field induces a conductive channel between drain and source, allowing current to flow. The enhancement-mode design means the device is normally off (no channel at VGS=0) and turns on with positive gate bias. The low VGS(th) of 0.49-1V enables direct interface with low-voltage logic circuits. The dual configuration provides two independent switching channels, which can be used for H-bridge pre-driving, complementary switching, or independent load control.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>S1<\/td>Source<\/td>Source of Channel 1<\/td><\/tr>
      2<\/td>G1<\/td>Gate<\/td>Gate of Channel 1<\/td><\/tr>
      3<\/td>S2<\/td>Source<\/td>Source of Channel 2<\/td><\/tr>
      4<\/td>G2<\/td>Gate<\/td>Gate of Channel 2<\/td><\/tr>
      5<\/td>D2<\/td>Drain<\/td>Drain of Channel 2<\/td><\/tr>
      6<\/td>D1<\/td>Drain<\/td>Drain of Channel 1<\/td><\/tr><\/table>","application_scenarios":"
      • Portable device power switching and load management<\/li>
      • Automotive body electronics and lighting control<\/li>
      • Battery-powered instrumentation and sensor interfaces<\/li>
      • Logic-level signal routing and level shifting in mixed-voltage systems<\/li>
      • DC motor pre-driver circuits in toys and consumer electronics<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Diodes Inc<\/td>DMN5L06DWK<\/td>SOT-363<\/td>Same device without -7 suffix<\/td><\/tr>
        NXP<\/td>BSS138PS<\/td>SOT-363<\/td>Dual N-CH, 50V, 220mA<\/td><\/tr>
        ON Semi<\/td>NTR4003NT1G<\/td>SOT-23-3<\/td>Single N-CH alternative<\/td><\/tr>
        Vishay<\/td>Si1902DL<\/td>SOT-363<\/td>Dual N-CH, 20V, 600mA<\/td><\/tr>
        Infineon<\/td>BSS138PSH6327<\/td>SOT-363<\/td>Dual N-CH, 60V, 200mA<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3297","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=3297"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3297\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=3297"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=3297"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=3297"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=3297"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}