{"id":3223,"date":"2026-06-01T00:06:46","date_gmt":"2026-06-01T00:06:46","guid":{"rendered":"https:\/\/materialparts.com\/at45db041e-sshn-t\/"},"modified":"2026-06-01T00:12:32","modified_gmt":"2026-06-01T00:12:32","slug":"at45db041e-sshn-t","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/at45db041e-sshn-t\/","title":{"rendered":"AT45DB041E-SSHN-T"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The AT45DB041E-SSHN-T from Microchip Technology (formerly Atmel) is a 4-Mbit (512 KB) DataFlash serial NOR flash memory with dual SRAM buffers in an 8-pin SOIC-N package. It operates from 1.65 V to 3.6 V with SPI interface speeds up to 85 MHz, featuring page-level erase, byte-write capability, and ultra-deep power-down mode at 400 nA.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n
Memory Density<\/td>\n4 Mbit (512 KB)<\/td>\n<\/tr>\n
\u062a\u0646\u0638\u064a\u0645 \u0627\u0644\u0630\u0627\u0643\u0631\u0629<\/td>\n2048 pages x 256 bytes (with 2 buffers)<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nSPI (Mode 0 and 3)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u062f \u0627\u0644\u0623\u0642\u0635\u0649 \u0644\u062a\u0631\u062f\u062f \u0627\u0644\u0633\u0627\u0639\u0629<\/td>\n85 MHz<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n1.65 V to 3.6 V<\/td>\n<\/tr>\n
Page Program Time<\/td>\n3 ms typical<\/td>\n<\/tr>\n
Deep Power-Down Current<\/td>\n0.4 uA typical<\/td>\n<\/tr>\n
Read Current<\/td>\n6 mA typical<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-40 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +85 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • Dual SRAM buffer architecture for simultaneous read\/write operations<\/li>\n
  • Byte-write provides serial EEPROM functionality in NOR Flash<\/li>\n
  • Ultra-deep power-down mode at 400 nA for battery-powered applications<\/li>\n
  • 256-byte page erase for energy-efficient data logging<\/li>\n
  • Comprehensive security with unique ID, sector protection, and lockdown<\/li>\n
  • Product longevity commitment to 2034<\/li>\n
  • Flexible page size: 256 or 264 bytes per page<\/li>\n
  • More than 100,000 program\/erase cycles per page<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • Firmware storage for microcontrollers lacking internal flash<\/li>\n
    • Data logging in industrial and sensor nodes<\/li>\n
    • Configuration management and calibration storage<\/li>\n
    • Voice and image storage in embedded UI applications<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The AT45DB041E-SSHN-T from Microchip Technology (formerly Atmel) is a 4-Mbit (512 KB) DataFlash serial NOR flash memory with dual SRAM buffers in an 8-pin SOIC-N package. It operates from 1.65 V to 3.6 V with SPI interface speeds up to 85 MHz, featuring page-level erase, byte-write capability, and ultra-deep power-down mode at 400 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13],"tags":[],"chip_brand":[134],"class_list":["post-3223","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","chip_brand-microchip"],"acf":{"brief_explanation":"4Mbit DataFlash, dual SRAM buf, SPI 85MHz, 1.65-3.6V, SOIC-8, byte-write, 400nA PD","date_code":"","package_case":"SOIC-8 208mil (3.81 x 4.80 x 1.27 mm)","in_stock":8300,"datasheet":"https:\/\/ww1.microchip.com\/downloads\/en\/DeviceDoc\/Atmel-8700-SEEPROM-AT45DB041E-SSHN-T.pdf","price":"$0.37 @ 1ku","product_introduction":"The AT45DB041E-SSHN-T from Microchip Technology is a 4-Mbit DataFlash serial NOR flash memory device designed for code and data storage in resource-constrained embedded systems. Unlike standard SPI flash, the DataFlash architecture features dual SRAM buffers that enable simultaneous read and write operations - one buffer can receive new data from the SPI bus while the other is being programmed into the main memory array. This dual-buffer architecture significantly improves system throughput for data logging applications. The device supports byte-level write operations, providing serial EEPROM-like functionality within a NOR flash device, eliminating the need for separate EEPROM and flash chips. Operating from 1.65 V to 3.6 V with SPI clock speeds up to 85 MHz, it achieves read throughput of up to 42.5 MB\/s. The ultra-deep power-down mode draws only 400 nA, extending battery life in always-on sensor nodes. Microchip has committed to product longevity through 2034.","working_principle":"The AT45DB041E-SSHN-T operates through three functional blocks: (1) The SPI interface handles all communication using standard SPI Mode 0 or Mode 3 with chip select (CS), serial clock (SCK), serial input (SI), and serial output (SO). An 8-bit opcode precedes address and data fields in each command sequence. The interface supports continuous read operations without releasing CS, enabling high-throughput code execution. (2) The memory array is organized as 2048 pages of 256 bytes each (configurable to 264 bytes with extra bytes). Programming is performed through the dual SRAM buffers: data is first written into Buffer 1 or Buffer 2 via SPI, then a buffer-to-main-memory transfer command programs the page with built-in erase. This allows the host to continue writing to the other buffer during programming, achieving near-zero wait-time operation. (3) The power management subsystem supports active read (6 mA), standby (25 uA), and ultra-deep power-down (400 nA) modes. The byte-write feature allows individual bytes to be modified without page-level erase, implemented through an internal read-modify-write sequence that is transparent to the host.","pin_description":"
      Pin No.<\/td>Pin Name<\/td>Function<\/td><\/tr>
      1<\/td>CS<\/td>Chip select (active low)<\/td><\/tr>
      2<\/td>SO<\/td>Serial data output<\/td><\/tr>
      3<\/td>WP<\/td>Write protect (active low)<\/td><\/tr>
      4<\/td>VSS<\/td>Ground<\/td><\/tr>
      5<\/td>SI<\/td>Serial data input<\/td><\/tr>
      6<\/td>SCK<\/td>Serial clock<\/td><\/tr>
      7<\/td>\/HOLD or RESET<\/td>Hold or reset (active low)<\/td><\/tr>
      8<\/td>VCC<\/td>Supply voltage (1.65-3.6 V)<\/td><\/tr><\/table>","application_scenarios":"
      • Industrial sensor data loggers where dual SRAM buffers enable continuous write-while-program operation and 400 nA ultra-deep power-down extends battery life to years<\/li>
      • MCU firmware storage with XIP (execute-in-place) capability using 85 MHz SPI for fast boot and code execution without shadow RAM<\/li>
      • Configuration and calibration data storage leveraging byte-write EEPROM emulation for frequent small-data updates<\/li>
      • Portable medical devices requiring reliable non-volatile storage with low standby power and Microchip longevity commitment to 2034<\/li><\/ul>","alternative_models":"
        Model<\/td>Brand<\/td>Density<\/td>Interface<\/td>Package<\/td><\/tr>
        AT45DB041B-SSHN-T<\/td>Microchip<\/td>4 Mbit<\/td>SPI 66 MHz<\/td>SOIC-8<\/td><\/tr>
        AT45DB081E-SSHN-T<\/td>Microchip<\/td>8 Mbit<\/td>SPI 85 MHz<\/td>SOIC-8<\/td><\/tr>
        W25Q40CLSNIG<\/td>Winbond<\/td>4 Mbit<\/td>SPI 80 MHz<\/td>SOIC-8<\/td><\/tr>
        MX25L4006EM1I-12G<\/td>Macronix<\/td>4 Mbit<\/td>SPI 120 MHz<\/td>SOIC-8<\/td><\/tr>
        SST25VF040B-50-4I-SAE<\/td>Microchip<\/td>4 Mbit<\/td>SPI 50 MHz<\/td>SOIC-8<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3223","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=3223"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3223\/revisions"}],"predecessor-version":[{"id":3239,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/3223\/revisions\/3239"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=3223"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=3223"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=3223"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=3223"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}