{"id":2918,"date":"2026-05-27T12:21:00","date_gmt":"2026-05-27T12:21:00","guid":{"rendered":"https:\/\/materialparts.com\/psmn9r5-30ylc\/"},"modified":"2026-05-27T12:21:00","modified_gmt":"2026-05-27T12:21:00","slug":"psmn9r5-30ylc","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/psmn9r5-30ylc\/","title":{"rendered":"PSMN9R5-30YLC"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The PSMN9R5-30YLC from Nexperia (formerly NXP) is a 30V N-channel logic-level MOSFET in an LFPAK56 (Power-SO8) package using NextPower Superjunction technology. With RDS(on) of 8.3m\u03a9 typ. at VGS=10V and 44A continuous drain current, it is optimized for 4.5V gate drive in DC-DC converters and synchronous buck regulators.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
VDS (\u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641-\u0627\u0644\u0645\u0635\u0631\u0641)<\/td>\n30V<\/td>\n<\/tr>\n
RDS(on) max @ VGS=10V<\/td>\n9.8m\u03a9<\/td>\n<\/tr>\n
RDS(on) max @ VGS=4.5V<\/td>\n12.1m\u03a9<\/td>\n<\/tr>\n
\u0627\u0644\u0645\u0639\u0631\u0641 (\u062a\u064a\u0627\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641 \u0627\u0644\u0645\u0633\u062a\u0645\u0631)<\/td>\n44A<\/td>\n<\/tr>\n
Ptot (Power Dissipation)<\/td>\n34W<\/td>\n<\/tr>\n
VGS(th) Threshold<\/td>\n1.66V typ.<\/td>\n<\/tr>\n
QG(tot) @ VGS=4.5V<\/td>\n5nC typ.<\/td>\n<\/tr>\n
QG(tot) @ VGS=10V<\/td>\n10.4nC typ.<\/td>\n<\/tr>\n
QGD<\/td>\n1.6nC typ.<\/td>\n<\/tr>\n
Qrr (Reverse Recovery)<\/td>\n18nC typ.<\/td>\n<\/tr>\n
CISS<\/td>\n681pF typ.<\/td>\n<\/tr>\n
COSS<\/td>\n169pF typ.<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\nLFPAK56 \/ Power-SO8 (SOT669)<\/td>\n<\/tr>\n
Max Junction Temperature<\/td>\n175\u00b0C<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n
    \n
  • NextPower Superjunction technology<\/li>\n
  • Ultra-low RDS(on): 8.3m\u03a9 typ. @ 10V<\/li>\n
  • Logic-level gate drive optimized for 4.5V<\/li>\n
  • Ultra-low QG, QGD, and QOSS for high efficiency<\/li>\n
  • High reliability LFPAK56 package qualified to 175\u00b0C<\/li>\n
  • Low parasitic inductance and resistance<\/li>\n
  • 44A continuous current capability<\/li>\n<\/ul>\n

    \u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n
      \n
    • DC-DC converters (buck, boost, buck-boost)<\/li>\n
    • Synchronous buck regulator low-side switch<\/li>\n
    • Load switching and power management<\/li>\n
    • Motor drive and battery management<\/li>\n
    • Point-of-load power supplies<\/li>\n<\/ul>","protected":false},"excerpt":{"rendered":"

      Product Overview The PSMN9R5-30YLC from Nexperia (formerly NXP) is a 30V N-channel logic-level MOSFET in an LFPAK56 (Power-SO8) package using NextPower Superjunction technology. With RDS(on) of 8.3m\u03a9 typ. at VGS=10V and 44A continuous drain current, it is optimized for 4.5V gate drive in DC-DC converters and synchronous buck regulators. Key Specifications VDS (Drain-Source Voltage) 30V […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[],"chip_brand":[168],"class_list":["post-2918","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","chip_brand-nxp"],"acf":{"brief_explanation":"30V N-ch MOSFET, 9.8m\u03a9 RDSon, 44A, logic-level 4.5V, LFPAK56, NextPower","date_code":"","package_case":"LFPAK56 \/ Power-SO8 \/ SOT669 (5 x 6 x 1.0mm)","in_stock":6541,"datasheet":"https:\/\/www.nexperia.com\/product\/PSMN9R5-30YLC","price":"$1.35 @ 1ku","product_introduction":"The PSMN9R5-30YLC from Nexperia (formerly NXP) is an N-channel enhancement-mode logic-level MOSFET in the space-saving LFPAK56 (Power-SO8) package utilizing NextPower Superjunction technology. With RDS(on) of just 9.8m\u03a9 max at VGS=10V and optimized performance at 4.5V gate drive, it delivers ultra-low QG (5nC at 4.5V), QGD (1.6nC), and QOSS for high system efficiency at both light and heavy loads. The LFPAK56 package offers low parasitic inductance and resistance with 175\u00b0C junction temperature capability.","working_principle":"The PSMN9R5-30YLC is an N-channel enhancement-mode MOSFET constructed using NextPower Superjunction technology. Superjunction architecture uses alternating p-type and n-type columns in the drift region, allowing higher doping concentration without sacrificing breakdown voltage, resulting in dramatically lower RDS(on) per unit area. The logic-level gate threshold (VGS(th) = 1.66V typ.) enables direct drive from 3.3V or 5V logic, while the low gate charge (QG = 5nC at 4.5V) minimizes gate drive power dissipation at high switching frequencies. The body diode provides reverse conduction in synchronous buck applications with Qrr = 18nC.","pin_description":"
      Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
      1<\/td>Source<\/td>Power<\/td>Source terminal (also connected to tab)<\/td><\/tr>
      2<\/td>Gate<\/td>Input<\/td>Gate control terminal<\/td><\/tr>
      3<\/td>Drain<\/td>Power<\/td>Drain terminal (via tab to heatsink)<\/td><\/tr>
      4<\/td>Source<\/td>Power<\/td>Source terminal (mirrored)<\/td><\/tr><\/table>","application_scenarios":"
      • Synchronous buck converter low-side MOSFET for VRM\/POL<\/li>
      • DC-DC buck-boost converter power stage in battery systems<\/li>
      • High-side load switch with logic-level gate drive<\/li>
      • Motor H-bridge power stage in battery-powered tools<\/li>
      • Battery management system switching element<\/li><\/ul>","alternative_models":"
        Manufacturer<\/th>Part Number<\/th>Package<\/th>Notes<\/th><\/tr>
        Nexperia<\/td>PSMN7R0-30YLC<\/td>LFPAK56<\/td>Lower RDSon 7m\u03a9, same family<\/td><\/tr>
        Nexperia<\/td>PSMN4R8-30YLC<\/td>LFPAK56<\/td>Even lower RDSon 4.8m\u03a9<\/td><\/tr>
        Infineon<\/td>BSZ040N08LS5<\/td>SuperSO-8<\/td>30V, 4m\u03a9, logic level<\/td><\/tr>
        TI<\/td>CSD17312Q5<\/td>SON-5x6<\/td>30V, 9.7m\u03a9, NexFET<\/td><\/tr>
        onsemi<\/td>NTMFS4C316N<\/td>PQFN-5x6<\/td>30V, 7.1m\u03a9, logic level<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/2918","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=2918"}],"version-history":[{"count":0,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/2918\/revisions"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=2918"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=2918"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=2918"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=2918"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}