\u0625\u0646 AON7410 \u0645\u0646 Alpha & Omega Semiconductor \u0639\u0628\u0627\u0631\u0629 \u0639\u0646 MOSFET \u0630\u0648 \u0642\u0646\u0627\u0629 N \u0630\u0627\u062a \u0648\u0636\u0639 \u062a\u0639\u0632\u064a\u0632 30 \u0641\u0648\u0644\u062a \u0641\u064a \u062d\u0632\u0645\u0629 DFN 3x3A-8L \u0645\u0639 \u0648\u0633\u0627\u062f\u0629 \u0645\u0643\u0634\u0648\u0641\u0629. \u0648\u064a\u062a\u0645\u064a\u0632 \u0628\u062d\u062f \u0623\u0642\u0635\u0649 20 \u0645 \u0623\u0648\u0645 RDS (\u062a\u0634\u063a\u064a\u0644) \u0628\u062d\u062f \u0623\u0642\u0635\u0649 \u0639\u0646\u062f VGS = 10 \u0641\u0648\u0644\u062a\u060c \u064824 \u0623\u0645\u0628\u064a\u0631 \u062a\u064a\u0627\u0631 \u062a\u0635\u0631\u064a\u0641 \u0645\u0633\u062a\u0645\u0631\u060c \u0648\u0634\u062d\u0646\u0629 \u0628\u0648\u0627\u0628\u0629 \u0646\u0645\u0648\u0630\u062c\u064a\u0629 9.8 \u0646\u064a\u0648\u062a\u0646 \u0633\u0646\u062a\u064a\u0645\u062a\u0631 \u0645\u0643\u0639\u0628\u060c \u0648\u062a\u0628\u062f\u064a\u062f \u0637\u0627\u0642\u0629 20 \u0648\u0627\u0637. \u064a\u0633\u062a\u0647\u062f\u0641 \u0627\u0644\u062c\u0647\u0627\u0632\u060c \u0627\u0644\u0630\u064a \u062a\u0645 \u062a\u0635\u0646\u064a\u0639\u0647 \u0628\u062a\u0642\u0646\u064a\u0629 \u0627\u0644\u062e\u0646\u0627\u062f\u0642 \u0627\u0644\u0645\u062a\u0642\u062f\u0645\u0629\u060c \u062a\u0637\u0628\u064a\u0642\u0627\u062a \u0645\u062d\u0648\u0644 \u0627\u0644\u062a\u064a\u0627\u0631 \u0627\u0644\u0645\u0633\u062a\u0645\u0631-\u0627\u0644\u062a\u0631\u062f\u062f \u0627\u0644\u0645\u062a\u0646\u0627\u0648\u0628 \u0648\u0645\u0641\u062a\u0627\u062d \u0627\u0644\u062a\u062d\u0645\u064a\u0644. \u062a\u0645 \u0627\u062e\u062a\u0628\u0627\u0631 100% UIS \u0648Rg. \u062e\u0627\u0644\u064d \u0645\u0646 \u0627\u0644\u0647\u0627\u0644\u0648\u062c\u064a\u0646 \u0648\u0645\u062a\u0648\u0627\u0641\u0642 \u0645\u0639 RoHS. \u0646\u0637\u0627\u0642 \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0648\u0635\u0644\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644 \u0645\u0646 -55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629. \u0639\u0628\u0648\u0629 \u0634\u0631\u064a\u0637 \u0648\u0628\u0643\u0631\u0629 \u0645\u0639 5000 \u0648\u062d\u062f\u0629 \u0644\u0643\u0644 \u0628\u0643\u0631\u0629.<\/p>","protected":false},"excerpt":{"rendered":"
The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a DFN 3x3A-8L package with exposed pad. It features 20 mOhm maximum RDS(on) at VGS = 10 V, 24 A continuous drain current, 9.8 nC typical gate charge, and 20 W power dissipation. Fabricated with advanced trench technology, the […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[174],"class_list":["post-2066","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-aosmd"],"acf":{"brief_explanation":"30V N-ch MOSFET, 24A, 20mOhm@10V, 9.8nC Qg, DFN 3x3 EP, DC-DC\/load switch","date_code":"","package_case":"DFN 3x3A-8L EP (3.0 x 3.0 x 0.78 mm, 0.65mm pitch, exposed pad)","in_stock":3538320,"datasheet":"https:\/\/www.aosmd.com\/res\/data_sheets\/AON7410.pdf","price":"$0.12 (5K+ pcs)","product_introduction":"The AON7410 from Alpha & Omega Semiconductor is a 30 V N-channel enhancement-mode power MOSFET in a thermally enhanced DFN 3x3A-8L package with exposed pad. The device uses advanced trench technology to deliver excellent RDS(on) with low gate charge, making it well-suited for DC-DC converter and load switch applications.\n\nWith 20 mOhm maximum RDS(on) at VGS = 10 V (26 mOhm at 4.5 V) and 24 A continuous drain current, the AON7410 provides high current handling in a compact 9 mm2 footprint. The 9.8 nC typical gate charge at 10 V enables efficient switching at frequencies up to several hundred kHz with minimal gate-drive loss.\n\nThe DFN 3x3A-8L package features a large exposed thermal pad on the bottom that provides a low-impedance thermal path to the PCB. With RthJA of approximately 50-60C\/W on a 1 in2 FR4 board with 2 oz copper, the package can dissipate up to 20 W at case temperatures up to 25C, or 3.1 W in free air at 25C ambient.\n\nThe device is 100% UIS (Unclamped Inductive Switching) tested and 100% Rg tested, ensuring reliable avalanche energy handling and consistent gate resistance for predictable switching behavior. The 1.4-2.5 V threshold voltage range provides logic-level drive capability from 2.5 V and above.\n\nThe AON7410 is halogen-free, antimony-free, and RoHS compliant. It is qualified for industrial applications with a maximum junction temperature of 150C. Tape-and-reel packaging contains 5000 units per reel for automated SMT assembly.","working_principle":"**N-Channel Trench MOSFET:** The AON7410 uses trench gate technology where vertical trenches are etched into the silicon and the gate electrode is formed inside these trenches. This creates a large channel width per unit die area, achieving the low 20 mOhm RDS(on). Current flows vertically from source (top) through the channel to drain (bottom\/exposed pad).\n\n**Enhancement-Mode Operation:** With VGS below the threshold (1.4-2.5 V), no channel forms and the device is off. When VGS exceeds VGS(th), an inversion layer forms under the gate oxide, creating a conductive N-type channel. RDS(on) decreases with increasing VGS as the channel becomes more enhanced.\n\n**DFN 3x3A-8L Pinout:** The 8-pin DFN package dedicates pins 1-3 to source, pin 4 to gate, and pins 5-8 to drain (plus exposed pad = drain). This multi-pin drain\/source configuration minimizes package parasitic inductance and resistance. The exposed pad serves as both the primary thermal path and the drain connection.\n\n**Avalanche Rating:** The 100% UIS testing guarantees each device can safely absorb inductive energy during unclamped switching events. The device is rated for 17 A avalanche current and 14 mJ single-pulse avalanche energy.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; connect to ground for low-side switching; three source pins reduce package resistance and inductance; body diode anode<\/td><\/tr> | ||||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 3)<\/td><\/tr> | ||||||||||||||||||||||||
| 3<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 2)<\/td><\/tr> | ||||||||||||||||||||||||
| 4<\/td> | Gate<\/td> | I<\/td> | Gate input; VGS(th) 1.4-2.5V; VGS max +\/-20V; 9.8nC gate charge@10V; Rg 3 Ohm typical; drive from MCU GPIO or gate driver<\/td><\/tr> | ||||||||||||||||||||||||
| 5<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 30V max VDS; 24A continuous; connect to load or inductor; primary thermal path<\/td><\/tr> | ||||||||||||||||||||||||
| 6<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 7, 8, exposed pad); solder to copper pour<\/td><\/tr> | ||||||||||||||||||||||||
| 7<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6, 8)<\/td><\/tr> | ||||||||||||||||||||||||
| 8<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6, 7)<\/td><\/tr> | ||||||||||||||||||||||||
| Pad<\/td> | Drain\/Thermal<\/td> | O<\/td> | Exposed pad; must solder to PCB copper pour with thermal vias; primary thermal path; RthJC = 5-6C\/W; connects to drain<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|