DMN2009LSS \u0645\u0646 \u0634\u0631\u0643\u0629 Diodes Incorporated \u0639\u0628\u0627\u0631\u0629 \u0639\u0646 MOSFET \u0630\u0648 \u0642\u0646\u0627\u0629 N \u0630\u0627\u062a \u0648\u0636\u0639 \u062a\u0639\u0632\u064a\u0632 20 \u0641\u0648\u0644\u062a \u0641\u064a \u062d\u0632\u0645\u0629 SO-8 \u0630\u0627\u062a 8 \u0633\u0646\u0648\u0646. \u0648\u062a\u0634\u0645\u0644 \u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629 20 \u0641\u0648\u0644\u062a \u062c\u0647\u062f \u0645\u0635\u062f\u0631 \u0627\u0644\u062a\u0635\u0631\u064a\u0641\u060c \u064812 \u0623\u0645\u0628\u064a\u0631 \u062a\u064a\u0627\u0631 \u062a\u0635\u0631\u064a\u0641 \u0645\u0633\u062a\u0645\u0631\u060c \u06488 \u0645 \u0623\u0648\u0645 \u0643\u062d\u062f \u0623\u0642\u0635\u0649 RDS (\u062a\u0634\u063a\u064a\u0644) \u0639\u0646\u062f VGS = 10 \u0641\u0648\u0644\u062a\u060c \u06489 \u0645 \u0623\u0648\u0645 \u0639\u0646\u062f VGS = 4.5 \u0641\u0648\u0644\u062a\u060c \u06480.5-1.2 \u0641\u0648\u0644\u062a \u0646\u0637\u0627\u0642 \u062c\u0647\u062f \u0627\u0644\u0639\u062a\u0628\u0629\u060c \u064816 \u0646\u064a\u0648\u062a\u0646 \u0633\u0643\u0631\u064a\u062a \u0639\u0646\u062f 4.5 \u0641\u0648\u0644\u062a\u060c \u0648\u062a\u0628\u062f\u064a\u062f \u0637\u0627\u0642\u0629 \u0646\u0645\u0648\u0630\u062c\u064a \u0639\u0646\u062f 4.5 \u0641\u0648\u0644\u062a. \u064a\u0633\u062a\u062e\u062f\u0645 \u0627\u0644\u062c\u0647\u0627\u0632 \u062a\u0642\u0646\u064a\u0629 MOSFET \u0630\u0627\u062a \u0627\u0644\u062e\u0646\u062f\u0642 \u0644\u0645\u0642\u0627\u0648\u0645\u0629 \u062a\u0634\u063a\u064a\u0644 \u0645\u0646\u062e\u0641\u0636\u0629 \u0644\u0644\u063a\u0627\u064a\u0629. \u062a\u062a\u0631\u0627\u0648\u062d \u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644 \u0645\u0646 -55 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 \u0625\u0644\u0649 +150 \u062f\u0631\u062c\u0629 \u0645\u0626\u0648\u064a\u0629 (TJ). \u062a\u0634\u064a\u0631 \u0644\u0627\u062d\u0642\u0629 LSS \u0625\u0644\u0649 \u062d\u0632\u0645\u0629 SO-8.<\/p>","protected":false},"excerpt":{"rendered":"
The DMN2009LSS from Diodes Incorporated is a 20 V N-channel enhancement-mode power MOSFET in an 8-pin SO-8 package. Key specifications include 20 V drain-source voltage, 12 A continuous drain current, 8 m\u03a9 maximum RDS(on) at VGS = 10 V, 9 m\u03a9 at VGS = 4.5 V, 0.5-1.2 V threshold voltage range, 16 nC typical gate […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,55],"tags":[],"chip_brand":[163],"class_list":["post-2065","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-transistors","chip_brand-diodes-incorporated"],"acf":{"brief_explanation":"20V N-ch MOSFET, 12A, 8m\u03a9@10V, 9m\u03a9@4.5V, SO-8, 2W, DC-DC\/load switch","date_code":"","package_case":"SO-8 (5.0 x 4.0 x 1.5 mm, 1.27mm pitch, gull-wing)","in_stock":1889,"datasheet":"https:\/\/www.diodes.com\/assets\/Datasheets\/DMN2009LSS.pdf","price":"$0.24 (10K+ pcs)","product_introduction":"The DMN2009LSS from Diodes Incorporated is a single N-channel enhancement-mode power MOSFET in the industry-standard SO-8 package. With 20 V drain-source rating and 12 A continuous current capability, it targets high-current, low-voltage power management applications including DC-DC converters, load switches, and motor drives.\n\nThe ultra-low 8 m\u03a9 maximum RDS(on) at VGS = 10 V (9 m\u03a9 at 4.5 V, 12 m\u03a9 at 2.5 V) is achieved through Diodes' trench MOSFET technology. At 10 A load, the conduction loss is only 0.8 W (8 m\u03a9 \u00d7 10\u00b2A), well within the 2 W package rating with adequate PCB copper area.\n\nThe 0.5 V minimum threshold voltage ensures the device can be driven from logic-level signals, while the 1.2 V maximum threshold guarantees full enhancement at 2.5 V gate drive. This wide threshold range means the device works well at both 2.5 V and 5 V gate drive, though RDS(on) is significantly lower at 4.5 V and above.\n\nThe SO-8 package provides a good balance between current handling and PCB area. The 2 W power dissipation rating assumes adequate thermal design \u2014 typically a 1 square-inch copper pour on the drain pins with thermal vias to internal ground planes.\n\nThe DMN2009LSS is part of Diodes' DMN20xx family of 20 V N-channel MOSFETs. Related devices include the DMN2009USS (same die in a different SO-8 variant) and DMN2016UTS (dual N-channel version). The -13 suffix variant denotes tape-and-reel packaging.\n\nFor applications requiring automotive qualification, Diodes offers AEC-Q101 qualified variants (identified by 'Q' suffix).","working_principle":"**N-Channel Trench MOSFET:** The DMN2009LSS uses trench gate technology where vertical trenches are etched into the silicon and the gate electrode is formed inside these trenches. This creates a very large channel width per unit die area, resulting in the ultra-low 8 m\u03a9 RDS(on). The vertical current flow from source (top) to drain (bottom) through the trench structure provides efficient current handling.\n\n**Gate Drive Considerations:** The 0.5-1.2 V threshold range means the device can be driven from logic levels. At VGS = 4.5 V, RDS(on) is 9 m\u03a9 maximum \u2014 only slightly higher than at 10 V. This logic-level optimization makes the device suitable for direct MCU GPIO drive in load-switch applications. At VGS = 2.5 V, RDS(on) increases to 12 m\u03a9, still very low for most applications.\n\n**SO-8 Package Thermal Design:** The SO-8 package dissipates heat primarily through the drain leads (pins 5-8 for single MOSFET configuration) into the PCB copper. The 2 W rating at 25\u00b0C ambient requires approximately 1 square inch of 1 oz copper on the drain pads. For higher dissipation, thermal vias connecting to internal copper planes improve thermal performance.\n\n**Body Diode:** The inherent body diode from source to drain has a forward voltage of approximately 0.9 V at 1 A. In synchronous rectifier applications, this diode conducts during the dead time between high-side and low-side switch transitions.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Source<\/td> | P\/G<\/td> | Source terminal; typically connected to ground for low-side switching; 12A continuous current path; body diode anode<\/td><\/tr> | ||||||||||||||||||||||
| 2<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pin 1); both source pins must connect together on PCB; reduces parasitic inductance<\/td><\/tr> | ||||||||||||||||||||||
| 3<\/td> | Source<\/td> | P\/G<\/td> | Source terminal (parallel with pins 1, 2); three source pins reduce package resistance and inductance<\/td><\/tr> | ||||||||||||||||||||||
| 4<\/td> | Gate<\/td> | I<\/td> | Gate input; VGS(th) 0.5-1.2V; VGS max \u00b112V; 16nC gate charge@4.5V; drive with low-impedance driver for fast switching; series gate resistor controls slew rate<\/td><\/tr> | ||||||||||||||||||||||
| 5<\/td> | Drain<\/td> | O<\/td> | Drain terminal; 20V max VDS; 12A continuous; 8m\u03a9 RDS(on)@10V; connect to load or inductor; primary thermal path to PCB<\/td><\/tr> | ||||||||||||||||||||||
| 6<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pin 5); solder to copper pour with thermal vias for heat dissipation<\/td><\/tr> | ||||||||||||||||||||||
| 7<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5, 6); three drain pins reduce resistance and provide thermal path<\/td><\/tr> | ||||||||||||||||||||||
| 8<\/td> | Drain<\/td> | O<\/td> | Drain terminal (parallel with pins 5-7); all four drain pins must connect together on PCB<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
|