The ESD9B3.3ST5G is a bidirectional TVS ESD protection diode from onsemi featuring 3.3 V working voltage, \u00b118 kV IEC 61000-4-2 ESD rating, 10.5 V clamping at 1 A IPP, and 15 pF junction capacitance. AEC-Q101 qualified and PPAP capable, it is designed for automotive and portable electronics. Housed in an ultra-small SOD-923 (1.0 x 0.6 x 0.4 mm) package with 100 nA max leakage, less than 1 ns response time, and 35 W peak pulse power rating, it operates over -55\u00b0C to +150\u00b0C junction temperature range.<\/p>","protected":false},"excerpt":{"rendered":"
The ESD9B3.3ST5G is a bidirectional TVS ESD protection diode from onsemi featuring 3.3 V working voltage, \u00b118 kV IEC 61000-4-2 ESD rating, 10.5 V clamping at 1 A IPP, and 15 pF junction capacitance. AEC-Q101 qualified and PPAP capable, it is designed for automotive and portable electronics. Housed in an ultra-small SOD-923 (1.0 x 0.6 […]<\/p>\n","protected":false},"author":2,"featured_media":1895,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[54,13],"tags":[],"chip_brand":[144],"class_list":["post-1804","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-diodes","category-integrated-circuits-ics","chip_brand-on"],"acf":{"brief_explanation":"Single bidirectional ESD protection diode, 3.3V VRWM, 15 pF, \u00b118 kV, SOD-923, AEC-Q101","date_code":"","package_case":"SOD-923 (1.0 x 0.6 mm)","in_stock":101811,"datasheet":"https:\/\/www.onsemi.com\/pdf\/datasheet\/esd9b-d.pdf","price":"$0.024 (1000+ pcs)","product_introduction":"The ESD9B3.3ST5G is a bidirectional transient voltage suppressor (TVS) diode manufactured by onsemi, designed to protect voltage-sensitive components from electrostatic discharge (ESD) events. It features a working peak reverse voltage (VRWM) of 3.3 V, breakdown voltage (VBR) of 5.0 V minimum at 1 mA test current, and clamping voltage of 10.5 V maximum at IPP = 1 A (8\/20 \u03bcs waveform).\r\n\r\nThe device provides IEC 61000-4-2 Level 4 ESD protection rated at \u00b118 kV for both contact and air gap discharge. It has a capacitance of 15 pF at 1 MHz, leakage current of 100 nA maximum at VRWM, and response time of less than 1 ns. The ESD9B3.3ST5G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.\r\n\r\nPackaged in the ultra-small SOD-923 (Case 514AB) with body dimensions of 1.0 x 0.6 x 0.4 mm, it is ideal for space-constrained portable applications such as cellular phones, MP3 players, and digital cameras. The device is Pb-free with matte tin lead finish, MSL-1 rated, and operates over a junction temperature range of -55\u00b0C to +150\u00b0C. Tape and reel packaging of 8000 units per reel.","working_principle":"The ESD9B3.3ST5G operates as a bidirectional TVS diode, providing ESD protection by clamping transient voltage excursions to safe levels.\r\n\r\nNormal Operation: When the protected line voltage is within the working range (0 to \u00b13.3 V), the TVS diode is in its high-impedance state. The device presents minimal loading to the circuit with a leakage current of only 100 nA maximum and a junction capacitance of 15 pF, ensuring signal integrity on the protected line.\r\n\r\nESD Event: When an electrostatic discharge event occurs, the voltage on the protected line rises above the breakdown voltage (VBR \u2265 5.0 V). The TVS diode avalanches, transitioning from high impedance to low impedance within less than 1 nanosecond. The ESD current is diverted through the diode to ground, clamping the voltage at the protected node to 10.5 V maximum (at IPP = 1 A). This fast response and low clamping voltage prevent damage to downstream ICs.\r\n\r\nBidirectional Protection: The bidirectional structure contains two back-to-back Zener junctions, allowing the device to clamp both positive and negative transient events. This is essential for protecting AC-coupled or bidirectional signal lines where voltage can swing in either polarity.\r\n\r\nSurge Current Handling: For IEC 61000-4-5 surge events (8\/20 \u03bcs), the device can handle up to 2 A peak pulse current (IPP = 2 A) with a clamping voltage of 11.5 V. The peak pulse power dissipation is rated at 35 W (8\/20 \u03bcs).\r\n\r\nThermal Behavior: Under transient events, the heat generated in the avalanche junction is dissipated through the lead frame and PCB. The thermal resistance (R\u03b8JA) is 400\u00b0C\/W on FR-5 board. The device is designed to handle repeated transient events within its rated specifications without degradation.","pin_description":"
| Pin<\/th> | Name<\/th> | Type<\/th> | Default Function<\/th> | Description<\/th><\/tr><\/thead> | ||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 1<\/td> | Cathode \/ Anode<\/td> | I\/O<\/td> | Protected Line Connection<\/td> | Bidirectional ESD clamp; connect to the signal or power line being protected<\/td><\/tr> | ||||||||||||||||||||||||||||||||||||
| 2<\/td> | Anode \/ Cathode<\/td> | I\/O<\/td> | Ground \/ Return Path<\/td> | Bidirectional ESD clamp; connect to system ground or return path<\/td><\/tr><\/tbody><\/table>","application_scenarios":"
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