The MT41K256M16TW-107:P is a 4Gbit (256M x 16) DDR3L SDRAM manufactured by Micron Technology, operating at 1.35V with backward compatibility to 1.5V DDR3 platforms. It features an 8n-prefetch double data rate architecture supporting 1866 MT\/s data rate (933 MHz clock) with CL=13 timing. The device incorporates 8 internal banks for concurrent operation, nominal and dynamic on-die termination (ODT), differential data strobe (DQS\/DQS#), programmable CAS latency, burst length of 8 with burst chop 4 on-the-fly selection, self-refresh with temperature-compensated auto-refresh, write leveling, and ZQ calibration. Fabricated in 20nm process and packaged in a 96-ball FBGA (8mm x 14mm), it operates over the commercial temperature range of 0\u00b0C to 95\u00b0C, making it suitable for embedded computing, networking equipment, industrial automation, consumer electronics, and automotive infotainment systems.<\/p>","protected":false},"excerpt":{"rendered":"
The MT41K256M16TW-107:P is a 4Gbit (256M x 16) DDR3L SDRAM manufactured by Micron Technology, operating at 1.35V with backward compatibility to 1.5V DDR3 platforms. It features an 8n-prefetch double data rate architecture supporting 1866 MT\/s data rate (933 MHz clock) with CL=13 timing. The device incorporates 8 internal banks for concurrent operation, nominal and dynamic […]<\/p>\n","protected":false},"author":2,"featured_media":2824,"comment_status":"open","ping_status":"open","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[37,13],"tags":[],"chip_brand":[3],"class_list":["post-1797","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-dynamic-random-access-memory-dram","category-integrated-circuits-ics","chip_brand-micron"],"acf":{"brief_explanation":"4Gbit DDR3L SDRAM, 1866 MT\/s, 1.35V, 96-ball FBGA","date_code":"","package_case":"96-ball FBGA (8mm x 14mm x 0.92mm)","in_stock":3856,"datasheet":"https:\/\/www.micron.com\/-\/media\/client\/global\/Documents\/Products\/Data%20Sheet\/DRAM\/DDR3\/DDR3L_4Gb_x16_TwinDie_V80A.pdf","price":"$10.41 (1+ pcs, Tray)","product_introduction":"The MT41K256M16TW-107:P is a 4Gbit (512MB) DDR3L SDRAM device manufactured by Micron Technology, organized as 256 Meg x 16 bits. It belongs to the MT41K series of low-voltage DDR3 SDRAM devices, operating at VDD = VDDQ = 1.35V (range: 1.283V to 1.45V) while maintaining backward compatibility with 1.5V DDR3 applications. The device uses an 8n-prefetch architecture with a double data rate interface that transfers two data words per clock cycle at the I\/O pins.\n\nThe -107 speed grade supports a maximum clock frequency of 933 MHz (1866 MT\/s data rate) with CL = 13 timing (tRCD = 13.91ns, tRP = 13.91ns). The device incorporates 8 internal banks for concurrent operation, enabling high bandwidth by hiding row precharge and activation time. It features nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals, differential bidirectional data strobe (DQS\/DQS#), and differential clock inputs (CK\/CK#).\n\nFabricated in 20nm process technology, the device is packaged in a 96-ball FBGA (8mm x 14mm, height 0.92mm) with commercial temperature range (0\u00b0C to 95\u00b0C). Key features include programmable CAS latency (CL), programmable posted CAS additive latency (AL), programmable CAS write latency (CWL), fixed burst length of 8 (BL8) and burst chop of 4 (BC4) with on-the-fly selection, self-refresh mode with temperature-compensated auto-refresh, write leveling, multipurpose register, and output driver calibration via ZQ pin. The device supports refresh intervals of 64ms at 0-85\u00b0C and 32ms at 85-95\u00b0C with 8192 refresh cycles.","working_principle":"The MT41K256M16TW-107:P employs a double data rate (DDR) architecture based on an 8n-prefetch scheme. A single read or write operation consists of a single 8n-bit-wide, four-clock-cycle data transfer at the internal DRAM core, paired with eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I\/O pins. This architecture enables high bandwidth while keeping the internal DRAM core frequency at one-eighth of the external data rate.\n\nClock and Command Subsystem: The device operates from differential clock inputs (CK and CK#). All control, command, and address signals are registered at the positive edge of CK. Commands are decoded from the CS#, RAS#, CAS#, WE#, and ACT# pins to initiate operations such as ACTIVATE, READ, WRITE, PRECHARGE, REFRESH, and mode register access.\n\nMemory Array Subsystem: The 4Gbit density is organized as 256 Meg x 16 with 8 internal banks. Each bank contains 32K rows (A[14:0]), 1K columns (A[9:0]), and a 2KB page size. The 8-bank architecture allows concurrent bank operations, hiding row access latency through bank interleaving and improving overall throughput.\n\nData Path Subsystem: Data is transferred via the 16-bit DQ bus with differential data strobe signals (DQS\/DQS#). During WRITE operations, DQS is center-aligned with data for reliable capture. During READ operations, the DRAM transmits data edge-aligned to DQS. The device supports BL8 (burst length 8) and BC4 (burst chop 4) with on-the-fly selection via the mode register.\n\nOn-Die Termination (ODT) Subsystem: The device supports both nominal and dynamic ODT for DQ, DQS, DQS#, and DM signals. ODT values are programmable through mode registers (RTT_NOM, RTT_WR), providing signal integrity optimization without external termination components. Dynamic ODT allows the termination value to change on-the-fly during write operations.\n\nRefresh Subsystem: The device requires 8192 refresh commands every 64ms (0-85\u00b0C) or 32ms (85-95\u00b0C). Self-refresh mode with auto-refresh (SRT) enables autonomous refresh operation during low-power standby. The ZQ calibration subsystem performs periodic output driver impedance calibration against an external 240-ohm resistor to maintain signal integrity over temperature and voltage variations.","pin_description":"
| Pin Group<\/th> | Pin \/ Ball<\/th> | Type<\/th> | Default Function<\/th> | Description<\/th><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Clock<\/td> | CK, CK#<\/td> | I<\/td> | Differential Clock Input<\/td> | All commands are latched on the rising edge of CK<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Chip Select<\/td> | CS#<\/td> | I<\/td> | Chip Select (Active Low)<\/td> | Enables or disables the command decoder<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Command<\/td> | RAS#, CAS#, WE#<\/td> | I<\/td> | Command Inputs<\/td> | Define the command being entered along with CS#<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Activate<\/td> | ACT#<\/td> | I<\/td> | Activate Input<\/td> | Activates the specified row in the selected bank<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Address<\/td> | A[14:0]<\/td> | I<\/td> | Address Inputs<\/td> | Provide row and column address; also used for mode register set and burst chop<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Bank Address<\/td> | BA[2:0]<\/td> | I<\/td> | Bank Select<\/td> | Select which bank is active for READ, WRITE, or ACTIVATE<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Data<\/td> | DQ[15:0]<\/td> | I\/O<\/td> | Data Bus<\/td> | Bi-directional data bus, 16-bit wide<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Data Strobe<\/td> | DQS, DQS#<\/td> | I\/O<\/td> | Differential Data Strobe<\/td> | Bi-directional differential strobe for data capture<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Data Mask<\/td> | DM<\/td> | I<\/td> | Data Mask Input<\/td> | Masks write data; sampled during write operations<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ODT<\/td> | ODT<\/td> | I<\/td> | On-Die Termination Enable<\/td> | Enables ODT for DQ\/DQS\/DM signals during reads<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Clock Enable<\/td> | CKE<\/td> | I<\/td> | Clock Enable (Active High)<\/td> | Enables internal clock signals and device operation<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Reset<\/td> | RESET#<\/td> | I<\/td> | Active Low Reset<\/td> | Asynchronous reset; clears all internal state<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Calibration<\/td> | ZQ<\/td> | I<\/td> | Impedance Calibration Reference<\/td> | Connected to external 240-ohm resistor for ODT\/driver calibration<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Power<\/td> | VDD<\/td> | P<\/td> | Core Power Supply<\/td> | 1.35V nominal (1.283V - 1.45V)<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Power<\/td> | VDDQ<\/td> | P<\/td> | I\/O Power Supply<\/td> | 1.35V nominal (1.283V - 1.45V)<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Power<\/td> | VREFCA<\/td> | P<\/td> | Reference Voltage (CA)<\/td> | Command\/Address reference voltage = VDD\/2<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Power<\/td> | VREFDQ<\/td> | P<\/td> | Reference Voltage (DQ)<\/td> | Data reference voltage = VDDQ\/2<\/td><\/tr> | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| Ground<\/td> | VSS<\/td> | G<\/td> | Ground<\/td> | Device ground connections<\/td><\/tr><\/table>","application_scenarios":"
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