{"id":10240,"date":"2026-07-09T08:33:12","date_gmt":"2026-07-09T08:33:12","guid":{"rendered":"https:\/\/materialparts.com\/is62wv51216bll-55bli\/"},"modified":"2026-07-09T08:35:10","modified_gmt":"2026-07-09T08:35:10","slug":"is62wv51216bll-55bli","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/is62wv51216bll-55bli\/","title":{"rendered":"IS62WV51216BLL-55BLI"},"content":{"rendered":"

\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n

The IS62WV51216BLL-55BLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n

\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n\n
Memory Type<\/td>\nAsynchronous SRAM<\/td>\n<\/tr>\n
\u0627\u0644\u0643\u062b\u0627\u0641\u0629<\/td>\n8Mbit (1MB)<\/td>\n<\/tr>\n
Organization<\/td>\n512K x 16<\/td>\n<\/tr>\n
Access Time<\/td>\n55 ns<\/td>\n<\/tr>\n
\u0627\u0644\u0648\u0627\u062c\u0647\u0629<\/td>\nParallel (Asynchronous)<\/td>\n<\/tr>\n
\u062c\u0647\u062f \u0627\u0644\u0625\u0645\u062f\u0627\u062f<\/td>\n2.5 \u0641\u0648\u0644\u062a \u0625\u0644\u0649 3.6 \u0641\u0648\u0644\u062a<\/td>\n<\/tr>\n
Operating Power<\/td>\n36 mW (Typ)<\/td>\n<\/tr>\n
CMOS Standby Current<\/td>\n12 uW (Typ)<\/td>\n<\/tr>\n
Address Bus Width<\/td>\n19 bits (A0-A18)<\/td>\n<\/tr>\n
Data Bus Width<\/td>\n16 bits (I\/O0-I\/O15)<\/td>\n<\/tr>\n
Byte Control<\/td>\nLB (lower), UB (upper)<\/td>\n<\/tr>\n
Chip Enables<\/td>\nCS1 (active-low), CS2 (active-high)<\/td>\n<\/tr>\n
Fully Static Operation<\/td>\nNo clock or refresh required<\/td>\n<\/tr>\n
\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n-40 C to +85 C (Industrial)<\/td>\n<\/tr>\n
\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n48-Mini BGA (7.2 x 8.7 x 0.9 mm)<\/td>\n<\/tr>\n
Also Available<\/td>\n44-TSOP Type II<\/td>\n<\/tr>\n<\/table>\n

\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n

8Mbit ultra-low power CMOS static RAM; 512K x 16 organization; 55ns access time; Wide voltage range: 2.5V to 3.6V; Ultra-low CMOS standby power (12 uW typical); No clock or refresh required (fully static); TTL-compatible interface levels; Three-state outputs; Upper and lower byte control (UB, LB); Dual chip enable (CS1, CS2) for easy expansion; Industrial temperature grade (-40C to +85C); 48-Mini BGA and 44-TSOP II package options; Lead-free (matte Sn) available<\/p>\n

\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n

Battery-backed memory systems; Embedded processor cache; Industrial control systems; Data logging and buffering; Portable and handheld devices; Communication equipment; Hard disk drive buffer; Automotive body electronics<\/p>","protected":false},"excerpt":{"rendered":"

Product Overview The IS62WV51216BLL-55BLI is a ISSI product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Memory Type Asynchronous SRAM Density 8Mbit (1MB) Organization 512K x 16 Access Time 55 ns Interface Parallel (Asynchronous) Supply Voltage 2.5V to 3.6V Operating Power 36 […]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,4,38],"tags":[1494],"chip_brand":[210],"class_list":["post-10240","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-memory-chips","category-static-random-access-memory-sram","tag-is62wv51216bll-55bli","chip_brand-issi"],"acf":{"brief_explanation":"8Mbit async SRAM, 512Kx16, 2.5-3.6V, 55ns, ultra-low power, 48-mini BGA, Industrial","date_code":"","package_case":"48-Mini BGA (7.2 x 8.7 x 0.9 mm)","in_stock":3838,"datasheet":"https:\/\/www.issi.com\/WW\/pdf\/62WV51216ALL-BLL.pdf","price":"$7.50 @ 1ku","product_introduction":"The IS62WV51216BLL-55BLI from ISSI is an 8Mbit ultra-low power CMOS static RAM organized as 512K words by 16 bits, fabricated using ISSI's high-performance CMOS technology. With a 55ns access time and supply voltage range of 2.5V to 3.6V, this device is optimized for battery-powered and low-power embedded applications where data retention with minimal power consumption is critical. The fully static design requires no clock or refresh, simplifying memory controller design and ensuring data integrity without periodic refresh cycles. The ultra-low CMOS standby power of just 12 uW typical makes this SRAM ideal for always-on applications where the memory must retain data during long periods of system idle. The BLL designation indicates the 2.5-3.6V voltage range (B series), 55ns speed grade (55), BGA package (B), and industrial temperature grade (I). Dual chip enable inputs (CS1 active-low and CS2 active-high) simplify memory expansion, while upper byte (UB) and lower byte (LB) control signals enable byte-wide read and write operations on the 16-bit data bus.","working_principle":"The IS62WV51216BLL-55BLI operates as a fully static asynchronous SRAM where each memory cell consists of a 6-transistor CMOS flip-flop that retains its stored bit as long as power is applied, without requiring periodic refresh cycles. Address inputs (A0-A18) directly decode to select one of 512K x 16 bit locations through row and column decoders. When CS1 is low and CS2 is high, the device is selected and responds to control inputs. A read operation occurs when WE is high, OE is low, and the appropriate byte enable (LB for I\/O0-I\/O7, UB for I\/O8-I\/O15) is low; the data at the selected address appears on the I\/O pins after the 55ns access time. A write operation occurs when WE is low; data on the I\/O pins is written to the selected address with the byte enables controlling which byte is written. When deselected (CS1 high or CS2 low), the device enters a low-power standby mode where CMOS input levels reduce power consumption to just 12 uW typical. The three-state outputs go to high impedance when the device is deselected, when OE is high, or when both byte enables are high, allowing the I\/O bus to be shared with other devices.","pin_description":"
Pin<\/th>Name<\/th>Type<\/th>Function<\/th><\/tr>
A0-A18<\/td>Address Inputs<\/td>Input<\/td>19-bit address selects one of 512K x 16 memory locations<\/td><\/tr>
I\/O0-I\/O7<\/td>Lower Byte Data<\/td>I\/O<\/td>Lower byte bidirectional data bus (controlled by LB)<\/td><\/tr>
I\/O8-I\/O15<\/td>Upper Byte Data<\/td>I\/O<\/td>Upper byte bidirectional data bus (controlled by UB)<\/td><\/tr>
CS1<\/td>Chip Enable 1<\/td>Input<\/td>Active-low chip select; must be low to select device<\/td><\/tr>
CS2<\/td>Chip Enable 2<\/td>Input<\/td>Active-high chip select; must be high to select device<\/td><\/tr>
OE<\/td>Output Enable<\/td>Input<\/td>Active-low output enable; gates data onto I\/O during reads<\/td><\/tr>
WE<\/td>Write Enable<\/td>Input<\/td>Active-low write enable; controls writing and reading of memory<\/td><\/tr>
LB<\/td>Lower Byte Control<\/td>Input<\/td>Active-low lower byte enable; controls I\/O0-I\/O7<\/td><\/tr>
UB<\/td>Upper Byte Control<\/td>Input<\/td>Active-low upper byte enable; controls I\/O8-I\/O15<\/td><\/tr><\/table>","application_scenarios":"
  • Battery-Backed Memory:<\/strong> Retains critical data in battery-powered systems with 12 uW standby power enabling months of data retention on a coin cell.<\/li>
  • Embedded Processor Cache:<\/strong> Provides 1MB of fast 55ns SRAM cache for embedded processors without requiring refresh logic or clock synchronization.<\/li>
  • Industrial Data Logging:<\/strong> Buffers sensor measurements and event records in industrial equipment with fully static operation ensuring data integrity during power interruptions.<\/li>
  • Communication Buffers:<\/strong> Stores packet data and routing tables in networking equipment with byte-level control enabling efficient header and payload manipulation.<\/li><\/ul>","alternative_models":"
    Manufacturer<\/th>Part Number<\/th>Package<\/th>Density<\/th>Notes<\/th><\/tr>
    ISSI<\/td>IS62WV51216BLL-55TLI<\/td>44-TSOP II<\/td>8Mbit<\/td>TSOP package variant<\/td><\/tr>
    ISSI<\/td>IS62WV51216ALL-55BLI<\/td>48-Mini BGA<\/td>8Mbit<\/td>1.65-2.2V version<\/td><\/tr>
    Cypress<\/td>CY62157EV30LL-55ZSXI<\/td>48-BGA<\/td>8Mbit<\/td>Pin-compatible alternative<\/td><\/tr>
    Microchip<\/td>AT68166FT-55BUI<\/td>48-BGA<\/td>8Mbit<\/td>Radiation-tolerant alternative<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10240","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=10240"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10240\/revisions"}],"predecessor-version":[{"id":10250,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10240\/revisions\/10250"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=10240"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=10240"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=10240"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10240"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}