{"id":10223,"date":"2026-07-09T07:39:53","date_gmt":"2026-07-09T07:39:53","guid":{"rendered":"https:\/\/materialparts.com\/irfi4020h-117p\/"},"modified":"2026-07-09T07:40:36","modified_gmt":"2026-07-09T07:40:36","slug":"irfi4020h-117p","status":"publish","type":"post","link":"https:\/\/materialparts.com\/ar\/irfi4020h-117p\/","title":{"rendered":"IRFI4020H-117P"},"content":{"rendered":"<h2>\u0646\u0638\u0631\u0629 \u0639\u0627\u0645\u0629 \u0639\u0644\u0649 \u0627\u0644\u0645\u0646\u062a\u062c<\/h2>\n<p>The IRFI4020H-117P is a Infineon product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications.<\/p>\n<h2>\u0627\u0644\u0645\u0648\u0627\u0635\u0641\u0627\u062a \u0627\u0644\u0631\u0626\u064a\u0633\u064a\u0629<\/h2>\n<table>\n<tr>\n<td>\u0627\u0644\u0646\u0648\u0639<\/td>\n<td>N-Channel Enhancement Mode MOSFET<\/td>\n<\/tr>\n<tr>\n<td>VDS<\/td>\n<td>200V<\/td>\n<\/tr>\n<tr>\n<td>VGS<\/td>\n<td>+\/- 20V<\/td>\n<\/tr>\n<tr>\n<td>RDS(on) Max @ 10V<\/td>\n<td>0.35 Ohm<\/td>\n<\/tr>\n<tr>\n<td>ID @ 25C<\/td>\n<td>6.8A<\/td>\n<\/tr>\n<tr>\n<td>ID Pulsed<\/td>\n<td>27A<\/td>\n<\/tr>\n<tr>\n<td>VGS(th)<\/td>\n<td>2.0V to 4.0V<\/td>\n<\/tr>\n<tr>\n<td>Qg Typ @ 10V<\/td>\n<td>25 nC<\/td>\n<\/tr>\n<tr>\n<td>Ciss Typ<\/td>\n<td>900 pF<\/td>\n<\/tr>\n<tr>\n<td>Coss Typ<\/td>\n<td>200 pF<\/td>\n<\/tr>\n<tr>\n<td>Crss Typ<\/td>\n<td>25 pF<\/td>\n<\/tr>\n<tr>\n<td>\u062a\u0628\u062f\u064a\u062f \u0627\u0644\u0637\u0627\u0642\u0629<\/td>\n<td>38W<\/td>\n<\/tr>\n<tr>\n<td>RthJC<\/td>\n<td>1.67 C\/W<\/td>\n<\/tr>\n<tr>\n<td>RthJA<\/td>\n<td>62 C\/W<\/td>\n<\/tr>\n<tr>\n<td>\u062f\u0631\u062c\u0629 \u062d\u0631\u0627\u0631\u0629 \u0627\u0644\u062a\u0634\u063a\u064a\u0644<\/td>\n<td>-55 C to +150 C<\/td>\n<\/tr>\n<tr>\n<td>\u0627\u0644\u062d\u0632\u0645\u0629<\/td>\n<td>TO-220 Full Pack (Insulated)<\/td>\n<\/tr>\n<tr>\n<td>Technology<\/td>\n<td>HEXFET<\/td>\n<\/tr>\n<tr>\n<td>\u062c\u0647\u062f \u0627\u0644\u0639\u0632\u0644<\/td>\n<td>2500V RMS (tab to drain)<\/td>\n<\/tr>\n<\/table>\n<h2>\u0627\u0644\u0645\u064a\u0632\u0627\u062a<\/h2>\n<p>N-Channel 200V HEXFET power MOSFET; 6.8A continuous drain current; 0.35 Ohm max RDS(on) at 10V gate drive; TO-220 Full Pack with internal insulation (2500V RMS); No insulating washer or bushing required; Electrically isolated tab connected to source; Standard TO-220 footprint for easy upgrade from non-isolated packages; Fast switching capability; Avalanche rated; Ultra-low on-resistance per silicon area; Lead-free option available<\/p>\n<h2>\u0627\u0644\u062a\u0637\u0628\u064a\u0642\u0627\u062a<\/h2>\n<p>Switching power supplies; Motor drives and inverters; DC-DC converters; Active rectification; Battery chargers; Audio amplifiers (Class D); Load switches; Inductive load drivers<\/p>","protected":false},"excerpt":{"rendered":"<p>Product Overview The IRFI4020H-117P is a Infineon product designed for electronic applications. It features compact design with reliable performance characteristics suitable for various industrial and consumer applications. Key Specifications Type N-Channel Enhancement Mode MOSFET VDS 200V VGS +\/- 20V RDS(on) Max @ 10V 0.35 Ohm ID @ 25C 6.8A ID Pulsed 27A VGS(th) 2.0V to [&hellip;]<\/p>\n","protected":false},"author":2,"featured_media":0,"comment_status":"open","ping_status":"","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[13,56],"tags":[1488],"chip_brand":[173],"class_list":["post-10223","post","type-post","status-publish","format-standard","hentry","category-integrated-circuits-ics","category-mosfets","tag-irfi4020h-117p","chip_brand-infineon"],"acf":{"brief_explanation":"N-Channel 200V MOSFET, 6.8A, 0.35Ohm, TO-220 Full Pack insulated, HEXFET","date_code":"","package_case":"TO-220 Full Pack (10.28 x 8.48 x 4.82 mm)","in_stock":9346,"datasheet":"https:\/\/www.infineon.com\/dgdl\/Infineon-IRFI4020H-117P-DS-v01_00-EN.pdf?fileId=5546d462533600a4015355f20d211b0e","price":"$1.80 @ 1ku","product_introduction":"The IRFI4020H-117P from Infineon Technologies (formerly International Rectifier) is an N-Channel enhancement-mode power MOSFET rated at 200V drain-source voltage with 6.8A continuous drain current, housed in a TO-220 Full Pack (insulated) package. The 117P suffix denotes the fully encapsulated (full-pack) construction where the metal mounting tab is internally connected to the source terminal and electrically isolated from the drain, providing 2500V RMS isolation without requiring an external insulating washer or bushing when mounting to a heatsink. This simplifies assembly and improves thermal performance by eliminating the thermal resistance of an external insulator. The device features a maximum RDS(on) of 0.35 Ohm at VGS=10V and typical gate charge of 25 nC, making it suitable for medium-voltage switching applications. The 200V rating provides margin for 48V battery systems and off-line power supply front ends, while the insulated package enables direct heatsink mounting for simplified mechanical design in industrial and consumer applications.","working_principle":"The IRFI4020H-117P operates as a voltage-controlled N-Channel enhancement-mode MOSFET where the gate-source voltage controls the drain current flow through the device. When VGS exceeds the threshold voltage (2.0-4.0V), an inversion layer forms in the P-body region beneath the gate oxide, creating a conductive channel between drain and source. The HEXFET cell geometry utilizes a planar stripe structure that provides low on-resistance per unit of silicon area while maintaining adequate voltage blocking capability. In the TO-220 Full Pack package, the copper mounting tab is internally connected to the source terminal and encapsulated within the molded plastic body, providing electrical isolation from the drain terminal (the primary heat-generating junction) with 2500V RMS breakdown voltage. This internal isolation eliminates the need for external insulating materials (mica, silicone, or ceramic washers) between the package and heatsink, reducing the total junction-to-heatsink thermal resistance and simplifying assembly. During switching transitions, the gate charge (25 nC typical) must be supplied or removed by the gate driver, and the switching speed is determined by the driver current capability and the device capacitances (Ciss, Coss, Crss).","pin_description":"<table><tr><th>Pin<\/th><th>Name<\/th><th>Type<\/th><th>Function<\/th><\/tr><tr><td>1<\/td><td>Gate<\/td><td>Input<\/td><td>Gate terminal; controls MOSFET on\/off state<\/td><\/tr><tr><td>2<\/td><td>Drain<\/td><td>Output<\/td><td>Drain terminal; high-voltage power connection<\/td><\/tr><tr><td>3<\/td><td>Source<\/td><td>Power<\/td><td>Source terminal; internally connected to mounting tab<\/td><\/tr><tr><td>Tab<\/td><td>Source (Isolated)<\/td><td>Thermal<\/td><td>Mounting tab electrically connected to source; isolated from drain by 2500V RMS internal insulation<\/td><\/tr><\/table>","application_scenarios":"<ul><li><strong>Switching Power Supplies:<\/strong> Serves as the primary switch in 48V input DC-DC converters and off-line SMPS with insulated package simplifying heatsink mounting.<\/li><li><strong>Motor Drives:<\/strong> Switches 48V BLDC motor phases in industrial and automotive applications with 200V rating providing margin for inductive spikes.<\/li><li><strong>Active Rectification:<\/strong> Replaces diodes in synchronous rectification circuits with 0.35 Ohm RDS(on) reducing conduction losses compared to Schottky diodes.<\/li><li><strong>Audio Amplifiers:<\/strong> Used in Class D audio output stages where the insulated package enables easy paralleling on shared heatsinks without isolation concerns.<\/li><\/ul>","alternative_models":"<table><tr><th>Manufacturer<\/th><th>Part Number<\/th><th>Package<\/th><th>VDS<\/th><th>RDS(on)<\/th><th>Notes<\/th><\/tr><tr><td>Infineon<\/td><td>IRFI4210H-117P<\/td><td>TO-220 FP<\/td><td>250V<\/td><td>0.40 Ohm<\/td><td>Higher voltage rating<\/td><\/tr><tr><td>Infineon<\/td><td>IRFI4020H<\/td><td>TO-220 FP<\/td><td>200V<\/td><td>0.35 Ohm<\/td><td>Lead-free version<\/td><\/tr><tr><td>STMicroelectronics<\/td><td>STW20NM50<\/td><td>TO-247<\/td><td>500V<\/td><td>0.27 Ohm<\/td><td>Higher voltage, larger package<\/td><\/tr><tr><td>ON Semiconductor<\/td><td>FDPF20N50<\/td><td>TO-220 FP<\/td><td>500V<\/td><td>0.25 Ohm<\/td><td>Higher voltage insulated package<\/td><\/tr><\/table>"},"_links":{"self":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10223","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/users\/2"}],"replies":[{"embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/comments?post=10223"}],"version-history":[{"count":1,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10223\/revisions"}],"predecessor-version":[{"id":10234,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/posts\/10223\/revisions\/10234"}],"wp:attachment":[{"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/media?parent=10223"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/categories?post=10223"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/tags?post=10223"},{"taxonomy":"chip_brand","embeddable":true,"href":"https:\/\/materialparts.com\/ar\/wp-json\/wp\/v2\/chip_brand?post=10223"}],"curies":[{"name":"\u062f\u0628\u0644\u064a\u0648 \u0628\u064a","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}